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Remarkable improved photoelectric performance of SnS2 field-effect transistor with Au plasmonic nanostructures
摘要： The photoelectric devices developing towards the high integration and miniaturization in semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS2 nanosheets have evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by its atomic-layer thickness. Here we report a convenient and simple method to make a dramatic enhancement of the electrical and photoelectric performance of the SnS2 flake. By integrating SnS2 with Au plasmonic nanostructures, the photocurrent (Iph) increased by over 20 times. And the corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by ~2200%, 2200%, and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS2 FET at 532 nm are 1125.9 A/W and 2.12×1011 Jones. Though being atomically thin, the hybrid SnS2 photodetector benefiting from local surface plasmonic resonance achieves an excellent photoelectric performance not normally possible with the pristine SnS2-only device.
关键词： 2D material,SnS2,field effect transistor,photodetector,plasmonic resonance
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells
摘要： This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of junction field-effect transistors (JFETs). The random discrete doping (RDD) in the active device area is used to derive an analytical model to compute the standard deviation, σ Vth,RDD of the Vth-distribution for any arbitrary channel doping profiles. The model shows that the Vth-variability in JFETs depends on the active device area, channel doping concentration, and the depth of the channel depletion region of the gate/channel pn-junction. The model is applied to compute σ Vth,RDD for symmetric and asymmetric source/drain double-gate n-channel JFETs. The simulation results show that the model can be used for predicting Vth-variability in JFETs.
关键词： modeling threshold voltage variability,random discrete doping,process variability in JFETs,statistical dopant fluctuations,JFET threshold voltage variability,Junction field-effect transistor (JFET)
更新于2025-09-19 17:13:59
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Silicon Meets Graphene for a New Family of Near-Infrared Schottky Photodetectors
摘要： In recent years, graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions, opening the path to the realization of near-infrared photodetectors based on the internal photoemission effect where graphene plays the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.
关键词： photodetector,waveguide,silicon,graphene,field-effect transistor,internal photoemission effect
更新于2025-09-16 10:30:52
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Photoresponse of wafer-scale palladium diselenide films prepared by selenization method
摘要： Palladium diselenide (PdSe2) films exhibit a high charge carrier mobility and sensitivity in photodetection. In this work, wafer-scale PdSe2 thin films with controllable thickness have been synthesized by the selenization of Pd films. A PdSe2-based photodetector can detect a broad wavelength ranging from 420 nm to 1200 nm. The responsivity and detectivity can reach 1.96 × 103 A W-1 and 1.72 × 1010 W / Hz1/2 at VSD = 3 V, respectively. The figure of merit of the photodetection are comparable to the mechanically exfoliated PdSe2 based photodetector. This work demonstrated that selenization is a facile method to synthesize PdSe2 films in large scale and the films are promising for broadband photodetection.
关键词： palladium diselenide,field effect transistors,two-dimensional layered material,photodetection
更新于2025-09-16 10:30:52
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Synthesis, characterization and UV photodetector application of Sb-doped ZnO nanowires
摘要： Sb-doped ZnO nanowires with hexagonal wurtzite structures have been synthesized via chemical vapor deposition method, and the main charge state of Sb dopants is Sb5+. The photoluminescence spectra demonstrate the existence of shallow acceptors, SbZn-2VZn complexes in all probability. On the other hand, Sb doping caused more native and impurity donors in Sb-doped ZnO nanowires. Then, field effect transistors of single Sb-doped ZnO nanowire were fabricated and the transport properties shows n-type conductivity. The competition between shallow acceptors and donors, and the influence of Sb valency need to be investigated further to obtain stable Sb-doped p-type ZnO. At last, we have shown the potential application of Sb-doped ZnO nanowires for nanoscale UV photodetector.
关键词： field effect transistors,UV photodetector,Sb-doped ZnO nanowires,photoluminescence,chemical vapor deposition
更新于2025-09-16 10:30:52
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Solution-processed P3HT:PbS based NIR Photodetector with FET Configuration
摘要： A near-infrared (NIR) solution-processed photodetector based on a mixture of PbS colloidal quantum dots (CQDs) and Poly(3-hexylthiophene) (P3HT) was presented. In a reverse field-effect transistor (FET) device configuration Au(S,D)/P3HT:PbS/PMMA/Al(G), uniform-sized and well-dispersed PbS CQDs were employed as NIR absorbing materials in the active layer. Meanwhile, the poly(methyl methacrylate) (PMMA) dielectric layer could be seen as an encapsulation to enhance the device stability. Herein, High “on/off” current ratio (Ion/Ioff) of 104 was obtained in dark, and the maximum photosensitivity (P) of 947 was gotten under 200 mW/cm2 980 nm illumination. When the irradiance reduced to 0.1 mW/cm2, the responsivity (R) and detectivity (D?) of the NIR photodetector reached 9.4 mA/W and 2.5×1011 Jones, respectively. Therefore, the P3HT:PbS hybrid FET-based NIR photodetector had shown both relatively high electrical and detecting performance, which provided an experimental foundation and method for the next fabrication of medical infrared detectors and sensors.
关键词： PbS colloidal quantum dots (CQDs),Near-infrared (NIR) photodetector,Poly(3-hexylthiophene) (P3HT),Field-effect transistor (FET)
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - St. Petersburg, Russia (2019.10.17-2019.10.18)] 2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - A Method for Increasing the Low-Temperature Stability of Steady-State Behavior and Common-Mode Interference Resistance CJFET Dual-Input-Stages
摘要： An original input differential stage circuit (DS) on complementary junction field-effect transistors (CJFET) is proposed. Their main designated area is low-noise analog ICs for operation at low temperatures, including cryogenic ones. The special circuit design for setting steady-state behavior of the DS and its parametric optimization in the LTspice environment provide a relatively high stability of the CJFet steady-state behavior of the input transistors in a wide temperature range. It is shown that, in this case, the common- mode rejection ratio is increased.
关键词： low-temperature electronics,differential operational amplifier,LTspice environment,differential stage,common-mode rejection ratio,junction field-effect transistors
更新于2025-09-16 10:30:52
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Model for electroluminescence in single-walled carbon nanotube field effect transistor under transverse magnetic field
摘要： Electroluminescence spectrum and radiative recombination rate of short channel single-walled carbon nanotube field effect transistor in presence of transverse magnetic field is calculated by using non-equilibrium Green’s function method. Significant enhancement in radiative recombination rate and red shift in electroluminescence spectrum are observed with increase in the strength of magnetic field. The band gap suppression estimated from energy position resolved local density of states calculation plays a dominant role in transport mechanism under the influence of external magnetic field. The tuning of electroluminescence spectrum of single-walled carbon nanotube by transverse magnetic field can be employed as nanoscale optical source in next generation optoelectronic and photonic devices.
关键词： electroluminescence,single-walled carbon nanotube,optoelectronics,radiative recombination rate,plasmonics,field effect transistor
更新于2025-09-16 10:30:52
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Nonvolatile photoelectric memory with CsPbBr3 quantum dots embedded in poly(methyl methacrylate) as charge trapping layer
摘要： Nonvolatile organic field-effect transistor (OFET) photoelectric memories have attracted tremendous attention due to special photoelectric memory mechanism and application area, such as image capture and light information storage. Unfortunately, conventional two-step preparation method of floating gate and tunneling layer is complex and not conducive to large-area. Here, a nonvolatile OFET photoelectric memory with perovskite quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA) as charge trapping layer is reported. The photoelectric memory can effectively accumulate and release photo-generated carriers during photo- or photoelectric programming operations and electrical erasing operation. The memory characteristics of the photoelectric memory are comparable to that of traditional memories with two-step preparation technique of floating gate and tunneling layer. In addition, the memory device presents well retention time and endurance property even after being exposed to air for two weeks. Hence, the memory using QDs/PMMA composites as charge trapping layer shows great potential for the application in photoelectric devices.
关键词： photoelectric memory,inorganic perovskite quantum dots,organic field-effect transistor
更新于2025-09-16 10:30:52
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Photo- and electroluminescence features of films and field effect transistors based on inorganic perovskite nanocrystals embedded in a polymer matrix
摘要： The optical and electrical properties of films and field-effect transistors (FETs) based on pure MEH-PPV, neat CsPbBr3 nanocrystals (NCs), and MEH-PPV:CsPbBr3 NCs composites with different contents of CsPbBr3 NCs are investigated. The films were characterized by absorbance, atomic-force microscope and current-voltage characteristics (I-Vs) techniques. Relative PL and EL intensities and PL spectra of the pure MEH-PPV, neat CsPbBr3 NCs and MEH-PPV:CsPbBr3 NCs films were measured at 300 K at various levels of optical and electrical excitation power; these dependencies of the PL and EL intensities turned out to be sublinear and superlinear respectively. FETs based on MEH-PPV:CsPbBr3 NCs (1:1) films exhibit I-Vs at 290 – 100 K a dominant hole transport mechanism. The mobility of charge carriers was determined at 290 K for neat CsPbBr3 NCs (for electrons: 2.7 10-2 cm2/Vs) and MEH-PPV:CsPbBr3 NCs (1:1) (for holes: 9 cm2/Vs). The temperature dependence of the hole mobility μFET(T) of FETs based on MEH-PPV:CsPbBr3 NCs (1:1) films characteristic of the hopping mode. It was found that the superlinearity of the dependence of EL of MEH-PPV:CsPbBr3 NCs LE-FETs at 290 K increases with increasing concentration of CsPbBr3 NCs due to efficient energy transfer between CsPbBr3 NCs and the MEH-PPV polymer matrix, and also because of the probability of electron tunneling through the potential barrier to electrode. It is expected that the obtained MEH-PPV:CsPbBr3 NCs nanocomposite films will be useful for efficient applications in nanotechnology LEDs, FETs and LE-FETs.
关键词： Energy transfer,Field-effect transistors,Semiconducting polymers,Photo- and electroluminescence,Charge carrier mobility,Inorganic perovskite nanocrystals
更新于2025-09-16 10:30:52