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[ASME ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - San Francisco, California, USA (Monday 27 August 2018)] ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - The Effects of Temperature, Strain Rate, and Aging on the Poisson’s Ratio of SAC Lead Free Solders
摘要： In this study, we have conducted a combined numerical and experimental study on the Poisson’s ratio of SAC lead free solders. The Poisson’s ratio (PR) is one of the basic mechanical properties used in many material constitutive models. Although often not measured, it is important property in many finite element method (FEM) calculations. The value of the Poisson’s ratio of SAC lead free solders is relatively unexplored compared to other material properties, and for FEA simulations it is typically assumed to be ? = 0.3. In the current work, we have shown the effects of the chosen value of the solder joint Poisson’s ratio on the finite element results for BGA components subjected to thermal cycling. In the finite element models, the reliability predictions were based on the Morrow-Darveaux energy-based fatigue model. Several sizes (5, 10, 15 mm) of PBGA components with SAC305 solder joints with 0.4 and 0.8 mm spacing were modeled. The packages were subjected to a time dependent cyclic temperature distribution from -40 to 125 oC. The package assemblies were assumed to be in a stress-free state at 25 oC (room temperature), with no residual stresses induced in the manufacturing process. The simulation results have demonstrated that for specified range of Poisson’s ratio values of 0.15 < ??< 0.40, the solder Plastic Work varied over 20% and the Predicted Reliability Varied over 50%. To determine the actual Poisson’s ratio experimentally, uniaxial tensile stress-strain tests were carried out on SAC305 (96.5Sn3.0Ag0.5Cu) specimens using a micro tension/torsion testing machine with two strain rates (0.0001, and 0.00001 (sec-1)), four testing temperatures (T = 25, 50, 75, 100 oC), and several durations of prior aging at T = 125 oC. Deformations and strains in axial and transverse directions were measured using strain gages with automatic data acquisition from LabVIEW software. The recorded transverse strain vs. axial strain data were then fit with a linear regression analysis to determine the Poisson’s ratio values. A test matrix of experiments was developed to study the effects of temperature, strain rate, alloy composition, and solidification cooling profile on the value of solder Poisson’s ratio. The Poisson’s ratio was found to increase with increasing temperature, and decrease with increasing strain rate. Using a slower solidification cooling profile led to an increase in the solder Poisson’s ratio value. Finally, the microstructural coarsening that occurs during isothermal aging lead to an increase in the Poisson’s ratio.
关键词： FEA,Lead Free Solder,Reliability,DAQ,PBGA Packaging
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) - Tel-Aviv, Israel (2019.11.4-2019.11.6)] 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) - Overview of High Frequency Electronics Integration Concepts for Gap waveguide based High Gain Slot Antenna Array
摘要： This paper presents an overview of different low-loss microstrip to waveguide transition designs suitable for integrating millimeter wave electronics to a gap waveguide based slot array. Typically, E-plane probe type of transitions are widely used at mmWave frequency range to couple RF signal from a TX/RX MMIC to the waveguide section. H-plane split-blocks are avoided due to leakage problem from tiny slits formed by imperfect metal connections. On the other hand, the traditional slot arrays are built using H-plane split blocks. This makes it very challenging to integrate electronics and other passive components such as diplexer filter directly to a high gain planar antenna array. To overcome this above mentioned problem, we propose to use low-loss H-plane transitions to integrate RF electronics with the multi-layer gap waveguide based slot array. We demonstrate a completely packaged front-end at E-band, showing the potential of the gap waveguide technology to build a very compact full-duplex wireless system.
关键词： E-plane transition,Slot arrays,Full-duplex,Integration and packaging,Gap waveguide
更新于2025-09-23 15:21:01
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[IEEE 2020 12th International Conference on Measuring Technology and Mechatronics Automation (ICMTMA) - Phuket, Thailand (2020.2.28-2020.2.29)] 2020 12th International Conference on Measuring Technology and Mechatronics Automation (ICMTMA) - Review on PD Ultrasonic Detection Using EFPI - Part I: the Optical Fiber Sensing Technologies
摘要： We report the development of multistrata subsurface laser-modified microstructure with backgrind-assisted controlled fracture for defect-free ultrathin die fabrication. This study focuses on the microstructural properties and formation mechanisms of the subsurface Si dislocation belt layer with respect to laser scanning speed, pulse laser energies, and interstrata distances. We optimize and exploit the multistrata interactions between generated thermal shock waves and the preceding dislocation belt layers formed to initiate frontal crack fractures that separate out the individual dies from within the interior of the wafer. A new partial-SD before grinding (p-SDBG) integration scheme based upon the tandem use of three-strata SD for controlled crack fracture toward the frontside of the wafer followed by static loading from backgrinding to complete full kerf separation is demonstrated. The optimized three-strata SD process and p-SDBG integration scheme can be used to compensate for the high backside reflectance wafers to produce defect-free eight die stacks of 25-μm-thick mechanically and 46-μm-thick electrically functional 2-D NAND memory dies.
关键词： laser,semiconductor device packaging,semiconductor memory,Defects,wafer dicing,semiconductor device manufacture
更新于2025-09-23 15:21:01
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Interaction effect of LED color temperatures and light-protective additive packaging on photo-oxidation in milk displayed in retail dairy case
摘要： Effect of varied LED color temperatures on photo-oxidation in 2 % fat milk and protection efficiency of packaging with and without light-protective additives (LPA) under different color temperatures was firstly evaluated. Riboflavin (Rb) is one of the critical photo-sensitizers in 2 % milk when exposed to LED light. Higher color temperature with higher relative intensity of Rb absorbance region resulted in lower Rb and vitamin A retention, lower dissolved oxygen content, and higher TBARS value in milk packaged with non-LPA packaging. Yellow pigmented packaging that completely blocked the Rb absorbance region of all three LED color temperatures successfully reduced the rate of degradation of milk nutrients and flavor. TiO2-added packaging partially block the destructive light wavelength; higher level of TiO2 provided a longer protection on milk freshness. Combination of appropriate LED color temperature and LPA-packaging provided a cost-effective solution for minimizing photo-oxidation in retail dairy case.
关键词： color temperature,oxidation,freshness,milk,packaging,light wavelength,LED
更新于2025-09-23 15:21:01
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[IEEE 2018 IEEE 5G World Forum (5GWF) - Silicon Valley, CA, USA (2018.7.9-2018.7.11)] 2018 IEEE 5G World Forum (5GWF) - Packaged High Power Frond-End Module for Broadband 24GHz & 28GHz 5G solutions
摘要： This paper presents realization and characteristics of broadband plastic low cost packaged 5G High Power Frond-End (HPFE) operating in 24-31GHz bandwidth. This demonstrator includes a Transmit and Receive paths realized on mixed technologies: 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) and 150nm Gallium Arsenide (GaAs). Continuous Wave (CW) measured power results of the Transmit path (Tx) demonstrates a maximum output power (POUT,Tx) higher than 2W (33.5dBm) with 25% drain efficiency (DE), 24% power added efficiency (PAE), and 36dB of insertion gain (GI,Tx) in the 24-31GHz bandwidth. The receiver path (Rx) presents an maximum output power (POUT,Rx) of 30mW (15.5dBm) and an average Noise Figure (NF) of 3.6dB with an associated Insertion Gain (GI,Rx) of 20dB in the same bandwidth. The HPFE/Tx linearity has been investigated with several M-QAM modulation signals with 25/50 and 100MHz channel spacing and using Digital Pre-Distortion (DPD) leading to 48dBc Adjacent Channel Leakage Ratio (ACLR) and 40dB Mean Squared Error (MSE) for average output powers ranging from linearity performances have been 17dBm to 25dBm. The compared to the ones obtained with two other linear GaAs amplifiers to point telecommunications application: the HPFE presents similar linearity performances associated to a higher efficiency. Thanks to the mixed technologies approach, an optimized trade-off in terms of integration, electrical performances and cost has been demonstrated.
关键词： MMIC,PHEMT,Gallium Arsenide,Plastic packaging,Transmit/Receive path,Low Noise Amplifier,Gallium Nitride,Power Amplifier,Switch
更新于2025-09-23 15:21:01
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High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions
摘要： This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed.
关键词： wide bandgap,3D packaging,high power density,power electronics,wire bondless
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Evidence of reversible oxidation at CuInSe <sub/>2</sub> grain boundaries
摘要： Silicon photonics leverages microelectronic fabrication facilities to achieve photonic circuits of unprecedented complexity and cost efficiency. This efficiency does not yet translate to optical packaging, however, which has not evolved substantially from legacy devices. To reach the potential of silicon photonics, we argue that disruptive advances in the packaging cost, scalability in the optical port count, and scalability in the manufacturing volume are required. To attain these, we establish a novel photonic packaging direction based on leveraging existing microelectronics packaging facilities. We demonstrate two approaches to fiber-to-chip interfacing and one to hybrid photonic integration involving direct flip-chip assembly of photonic dies. Self-alignment is used throughout to compensate for insufficient placement accuracy of high-throughput pick and place tools. We show a self-aligned peak transmission of –1.3 dB from standard cleaved fibers to chip and of –1.1 dB from chip to chip. The demonstrated approaches are meant to be universal by simultaneously allowing wide spectral bandwidth for coarse wavelength division multiplexing and large optical-port count.
关键词： flip-chip devices,optical fiber communication,Integrated optoelectronics,packaging,optical polymers
更新于2025-09-23 15:19:57
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Room-Temperature Electrically Pumped InP-based $1.3\boldsymbol{\mu} \mathbf{m}$ Quantum Dot Laser on on-axis (001) Silicon
摘要： We present a method for quantifying a risk for killer defects at layer level and estimating yield for substrate packages using information from design ?les. To calculate risk ranks and predicted yield, we de?ne a risk distance that is a key parameter extracted from designs using image processing techniques. In order to validate our model, we analyze two different designs, each having multiple layers, and compare with data from baseline lots. It is shown that there is an inverse correlation between risk layer ranks and yield. Estimated yield based on our model is compared with baseline yield for four layers of the second design. The model-to-baseline yield difference is less than 1% for three layers we tested.
关键词： yield estimation,assembly,circuit analysis,metrology sampling,Yield prediction,integrated circuit packaging
更新于2025-09-23 15:19:57
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Direct Chip-to-Waveguide Transition Realized with Wire Bonding for 140 GHz to 220 GHz G-Band
摘要： This work presents a method to realize a direct chip-to-waveguide transition by means of commercial wire-bonding tools. A straight E-field probe is formed by a freely suspended bondwire and mounted to a standard RF pad on-chip. In contrast to conventional approaches, no additional dedicated substrate or large integrated radiating structure are necessary. A preliminary analysis is performed to illustrate the basic feasibility and a WR-05 prototype module, with dedicated test chip, is designed and optimized for a frequency range of 140 GHz to 220 GHz (G-Band). The measured return loss of a back-to-back configuration is above 10 dB, while the deembedded absolute loss of a single transition is between 0.4 dB and 1 dB, both within the complete waveguide bandwidth of 80 GHz. The demonstrated performance is very well suited to ultra-wideband communication systems or general-purpose mm-wave components.
关键词： WR-5,transition,bondwire,packaging,mm-wave,propagation,matching,waveguide,G band
更新于2025-09-23 15:19:57
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Plasmonic colored nanopaper: a potential preventive healthcare tool against threats emerging from uncontrolled UV exposure
摘要： Preventive healthcare is crucial to hinder or delay the onset of disease, furthermore it contributes to healthy and productive lifestyles and saves resources allocated to public health. Herein, we explore how the plasmonic coupling of silver and gold nanoparticles embedded within nanopaper allows for potential preventive healthcare tools based on a change in plasmonic color. Particularly, we selected UV radiation exposure as a potential threat to health to be monitored via plasmonic colored nanopaper (PCN). Uncontrolled UV radiation exposure is not only known to provoke epidermal damage, but also to trigger leaching of hazardous compounds from polycarbonate containers. In this context, we engineered UV-responsive PCN devices whose sensing mechanism is based on UV photodegradation of silver nanoparticles. Since absorbance and scattering of metal nanoparticles strongly depend on their size and inter-particle distance, the resulting PCN detectors are able to warn of the potential UV radiation-induced threat via a visually observable plasmonic color change with a yellowish/reddish transition. Epidermal experiments with tattoo-like PCN devices prove the resulting detectors can change in color upon safe dose of sun exposure. Moreover, PCN detectors stuck on polycarbonate containers also change in color after moderate sun exposure. This cost-effective and lightweight nanophotonic device leads to a versatile preventive healthcare tool.
关键词： smart packaging,nanoplasmonics,wearable devices,nanocellulose,nanophotonics
更新于2025-09-23 15:19:57