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Polymer spacer tunable Purcell-enhanced spontaneous emission in perovskite quantum dots coupled to plasmonic nanowire networks
摘要： Polymer spacer tunable Purcell-enhanced spontaneous emission in perovskite quantum dots coupled to plasmonic nanowire networks? Lead halide perovskite quantum dots (PQDs) have recently been proposed as a scalable and color-tunable quantum source, but their slow spontaneous emission creates a mismatch with high-speed nanophotonic devices. Here, we demonstrate fast and bright emission in PQD films coupled to silver nanowire networks (NWKs), in which polyvinyl alcohol (PVA) is used as a spacer to regulate the lossy characteristics of the plasmonic cavity. Compared with bare quartz, the PVA substrate shows a considerable enhancement effect on the apparent emission intensity, but a reduction in the emission rate of PQD excitons. The efficient NWK–PQD coupling generates an increase in the emission intensity of a factor of 6.0 (average 3.4) and simultaneously a 2.4-fold (average 1.9) enhancement in the emission rate. However, an opposite PVA spacer thickness dependence for Purcell factor and quantum yield is observed, indicating that the fast and bright emission would be a trade-off between the Purcell-enhanced radiative rate and large metal guidance on plasmonic cavity design for perovskite-based nanophotonic devices.
关键词： plasmonic nanowire networks,spontaneous emission,Polymer spacer,Purcell-enhanced,perovskite quantum dots
更新于2025-11-21 11:24:58
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Low Power Consumption Red Light-Emitting Diodes Based on Inorganic Perovskite Quantum Dots under an Alternating Current Driving Mode
摘要： Inorganic perovskites have emerged as a promising candidate for light-emitting devices due to their high stability and tunable band gap. However, the power consumption and brightness have always been an issue for perovskite light-emitting diodes (PeLEDs). Here, we improved the luminescence intensity and decreased the current density of the PeLEDs based on CsPbI3 quantum dots (QDs) and p-type Si substrate through an alternating current (AC) driving mode. For the different driving voltage modes (under a sine pulsed bias or square pulsed bias), a frequency-dependent electroluminescent (EL) behavior was observed. The devices under a square pulsed bias present a stronger EL intensity under the same voltage due to less thermal degradation at the interface. The red PeLEDs under a square pulsed bias driving demonstrate that the EL intensity drop-off phenomenon was further improved, and the integrated EL intensity shows the almost linear increase with the increasing driving voltage above 8.5 V. Additionally, compared to the direct current (DC) driving mode, the red PeLEDs under the AC condition exhibit higher operating stability, which is mainly due to the reducing accumulated charges in the devices. Our work provides an effective approach for obtaining strong brightness, low power consumption, and high stability light-emitting devices, which will exert a profound in?uence on coupling LEDs with household power supplies directly.
关键词： low power consumption,perovskite quantum dots,silicon,light emitting diodes,alternating current driving
更新于2025-11-21 11:01:37
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Robust CsPbX <sub/>3</sub> (X = Cl, Br, and I) perovskite quantum dot embedded glasses: nanocrystallization, improved stability and visible full-spectral tunable emissions
摘要： Currently, all inorganic perovskite quantum dots (QDs) of cesium lead halides (CsPbX3, X = Cl, Br, and I) have been mainly fabricated using wet chemical methods. Unfortunately, applications of perovskite QDs have been limited due to their poor stability. In the present work, the in situ growth of whole-family CsPbX3 (X = Cl, Br, and I) perovskite QDs in Zn–P–B–Sb based oxide glass via a glass crystallization strategy is reported. The as-prepared CsPbX3 QDs@glass nanocomposites exhibit typical excitonic recombination emissions and superior chemical stability benefited from the protection of the robust inorganic glass matrix. Through modifying the molar ratio of halide sources in glass, multi-color tunable emissions in the entire visible spectral range of 400–750 nm are achieved. As a result, light-emitting diode devices can be constructed by coupling blue-emissive CsPbBrCl2, green-emissive CsPbBr3 and red-emissive CsPbBr0.5I2.5 QDs@glass powders with a commercial ultraviolet chip, yielding bright white light luminescence with excellent optoelectronic performance.
关键词： stability,light-emitting diodes,tunable emissions,glass crystallization,perovskite quantum dots
更新于2025-11-20 15:33:11
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Light-Stimulated Synaptic Transistors Fabricated by a Facile Solution Process Based on Inorganic Perovskite Quantum Dots and Organic Semiconductors
摘要： Implementation of artificial intelligent systems with light-stimulated synaptic emulators may enhance computational speed by providing devices with high bandwidth, low power computation requirements, and low crosstalk. One of the key challenges is to develop light-stimulated devices that can response to light signals in a neuron-/synapse-like fashion. A simple and effective solution process to fabricate light-stimulated synaptic transistors (LSSTs) based on inorganic halide perovskite quantum dots (IHP QDs) and organic semiconductors (OSCs) is reported. Blending IHP QDs and OSCs not only improves the charge separation efficiency of the photoexcited charges, but also induces delayed decay of the photocurrent in the IHP QDs/OSCs hybrid film. The enhanced charge separation efficiency results in high photoresponsivity, while the induced delayed decay of the photocurrent is critical to achieving light-stimulating devices with a memory effect, which are important for achieving high synaptic performance. The LSSTs can respond to light signals in a highly neuron-/synapse-like fashion. Both short-term and long-term synaptic behaviors have been realized, which may lay the foundation for the future implementation of artificial intelligent systems that are enabled by light signals. More significantly, LSSTs are fabricated by a facile solution process which can be easily applied to large-scale samples.
关键词： light-stimulated synaptic transistors,solution process,organic semiconductors,blended materials,inorganic halide perovskite quantum dots
更新于2025-11-19 16:56:42
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - A Synthetic Method for Extremely Stable Thin Film of CsPbBr<inf>3</inf> QDs and its Application on Light-emitting Diodes
摘要： The ability to be mixed with the polymers is very important for applications of perovskite quantum dots (QDs), such as in display, lighting and so on. Here, a method for fabricating a thin film composed of CsPbBr3 QDs and polydimethylsiloxane (PDMS) was reported. By using the ethyl acetate, a large number of ligands on the surface were removed and the combination with polymers can realize. Based on the thin film, an LED device was assembled and its luminous flux, luminous efficiency, color temperature and CIE color coordinates were measured. What’s more, the thin film revealed a splendid stability after being stored for 42 days without any protection, which show the broad prospects of it.
关键词： Inorganic perovskite quantum dots,Stability,Light-emitting diodes
更新于2025-11-19 16:46:39
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Ligand Engineering for Improved All‐Inorganic Perovskite Quantum Dot‐MoS <sub/>2</sub> Monolayer Mixed Dimensional van der Waals Phototransistor
摘要： Combining intriguing physical properties of 2D crystals and intrinsically remarkable optical properties of halide perovskite quantum dots (QDs), the 0D–2D perovskite QD–based mixed dimensional van der Waals heterostructure (MvdWH) is considered as promising for optoelectronic applications. Even though the interfacial electronic structure of MvdWHs is sufficiently engineered to manipulate the charge carrier behavior, the issue of interfacial charge transfer efficiency originating from the residue ligands that are inevitably introduced by the QDs is still prominently remained. From this perspective, for the first time, a solution-processed surface ligand density control strategy is demonstrated to balance the QD surface passivation and the interfacial charge carrier extraction and injection efficiency in the 0D–2D MvdWH system. The accurate adjustment of ligand density outside QDs enables the subsequent modulation on interfacial charge carrier transfer efficiency from the aspect of electronic and optoelectronic properties. Furthermore, such kind of ligand engineering toward MvdWH interface is substantially demonstrated in a photogating mechanism–based phototransistor with an improved photoresponsivity as high as 1.13 × 105 A W?1. These results may push forward the evolution of 0D–2D mixed dimensional van der Waals optoelectronics.
关键词： mixed-dimensional van der Waals heterostructures,perovskite quantum dots,phototransistors,MoS2,ligand engineering
更新于2025-11-14 17:04:02
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Bright Blue Light Emission of Ni2+ ions doped CsPbClxBr3-x Perovskite Quantum Dots Enabling Efficient Light-Emitting Devices
摘要： In recent years, significant advances have been achieved in the red and green perovskite quantum dots（PQDs）based light-emitting diodes (LEDs). However, the performances of the blue perovskite LEDs are still seriously lagging behind that of the green and red counterparts. Herein, we successfully developed Ni2+ ions doped CsPbClxBr3-x PQDs through the room-temperature supersaturated recrystallization synthetic approach. We simultaneously realized the doping of various concentrations of Ni2+ cations, and modulated the Cl/Br element ratios through introducing different amount of NiCl2 solution in the reaction medium. By the synthetic method, not only the emission wavelength from 508 to 432 nm of Ni2+ ions doped CsPbClxBr3-x QDs was facially adjusted, but also the photoluminescence quantum yield (PLQY) of PQDs was greatly improved due to efficiently removing the defects of the PQDs. Thus, the blue emission at 470 nm with PLQY of 89% was achieved in 2.5% Ni2+ ions doped CsPbCl0.99Br2.01 QDs, which increased nearly three times over that of undoped CsPbClBr2 QDs, and was the highest for the CsPbX3 PQDs with blue emission that fulfilling the NTSC standards. Benefiting from the high luminous Ni2+ ions doped PQDs, the blue emitting LED at 470 nm was obtained, exhibiting an external quantum efficiency (EQE) of 2.4% and a maximum luminance of 612 cd/m2, which surpassed the best performance reported previously for the corresponding blue-emitting PQDs based LED.
关键词： perovskite QD-LEDs,Ni2+ ion doping,blue emission,anion exchange,perovskite quantum dots
更新于2025-09-23 15:21:01
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Electrochemically switchable electrochemiluminescent sensor constructed based on inorganic perovskite quantum dots synthesized with microwave irradiation
摘要： Microwave irradiation was employed to synthesize inorganic perovskite quantum dots (IPQDs) which were demonstrated to be monoclinic phase and behaved tunable photoluminescent emissions across the entire visible light spectrum. The microwave-based synthetic method was proved to be easy-operation, high-throughput and low-cost. These microwave-synthesized IPQDs exhibited electrochemically switchable electrochemiluminescence (ECL). Obvious ECL was obtained when holes were injected into the electron-injected IPQDs while almost no ECL was observed in the reverse process. ECL of IPQDs gave promise for constructing electrochemiluminescent sensors for hydrogen peroxide (H2O2) and dopamine (DA) detection. Linear relationships between ECL intensities and H2O2/DA concentrations were detected and satisfactory correlation coefficients were obtained. Our results shed light on the ECL of microwave-synthesized IPQDs.
关键词： electrochemiluminescent sensor,inorganic perovskite quantum dots,electroluminescence,microwave
更新于2025-09-23 15:21:01
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Bright CsPbI <sub/>3</sub> Perovskite Quantum Dot Light-Emitting Diodes with Top-Emitting Structure and a Low Efficiency Roll-Off Realized by Applying Zirconium Acetylacetonate Surface Modification
摘要： Zirconium acetylacetonate used as a co-precursor in the synthesis of CsPbI3 quantum dots (QDs) increased their photoluminescence quantum efficiency to values over 90%. The top-emitting device structure on a Si substrate with high thermal conductivity (to better dissipate Joule heat generated at high current density) was designed to improve the light extraction efficiency making use of a strong microcavity resonance between the bottom and top electrodes. As a result of these improvements, light-emitting diodes (LEDs) utilizing Zr-modified CsPbI3 QDs with an electroluminescence at 686 nm showed external quantum efficiency (EQE) of 13.7% at a current density of 108 mA cm?2, which was combined with low efficiency roll-off (maintaining an EQE of 12.5% at a high current density of 500 mA cm?2) and a high luminance of 14 725 cd m?2, and the stability of the devices being repeatedly lit (cycled on and off at high drive current density) has been greatly enhanced.
关键词： CsPbI3 perovskite quantum dots,top-emitting light-emitting diodes,surface modification,zirconium acetylacetonate,efficiency roll-off
更新于2025-09-23 15:21:01
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Inkjet Printing Matrix Perovskite Quantum Dot Lighta??Emitting Devices
摘要： Perovskite light emitting devices have been expected to be utilized in the field of displays. In this work, a stable FA0.3Cs0.7PbBr3 perovskite quantum dot ink with optimized octane:dodecane cosolvent is obtained by introducing a trace amount of long-chain ligand of oleylamine (OAm) during the quantum dot purification process. A green electroluminescent matrix device with 120 pixels per inch (PPI) is realized from the ink by using an inkjet printing technique, exhibiting a luminance of 1233 cd m?2, a peak current efficiency of 10.3 cd A?1, and an external quantum efficiency of 2.8%. The results may suggest a possibility of making perovskite quantum dot displays by using the inkjet printing technique.
关键词： perovskite quantum dots,inkjet printing,light-emitting diodes
更新于2025-09-23 15:21:01