- 标题
- 摘要
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- 实验方案
- 产品
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A surface photovoltaic effect-related high-performance photodetector based on a single CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> micro/nanowire
摘要： With the decrease of materials to the nanoscale, their surface states will play a crucial role in their performance. Here, an individual CH3NH3PbI3 micro/nanowire-based photodetector can show excellent sensitivity and responsivity to light with a wide wavelength range from 200 to 850 nm. A surface state-related photovoltaic effect associated with a surface barrier can be formed due to a depletion of majority carriers (holes) in the surface space charge region. At a low operation voltage, the photodetector can exhibit a low dark current. Upon illuminating near the end connected to the positive electrode, the light-induced decrease of the surface barrier leads to enhanced conduction, showing a large photocurrent. At zero bias, additionally, the photodetector can show a relatively large photogenerated voltage and current when only the vicinity of one end is illuminated. Based on the CH3NH3PbI3 micro/nanostructure performance herein, surface photovoltaic-controlled photodetectors with superior performance will have important applications in new-generation optoelectronic devices.
关键词： CH3NH3PbI3,optoelectronic devices,photodetector,surface photovoltaic effect,micro/nanowire
更新于2025-09-23 15:19:57
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Self-driven all-inorganic perovskite microplatelet vertical Schottky junction photodetectors with a tunable spectral response
摘要： Wavelength-selective perovskite photodetectors (PDs) have many applications in optoelectronic field, such as machine vision, imaging and full-color display. However, the instability of organo-inorganic hybrid perovskite material severely limits the commercialization of perovskite-based PDs. In this work, a more stable all-inorganic perovskite, CsPbBr(3-x)Clx (x = 0, 1, 2, 3) microplatelets (MPs), were employed to fabricate Schottky PDs with a simple vertical structure of ITO/MP/Au. The optimized CsPbBr3 MP Schottky PDs exhibit rapid response speed (75 μs) and very low dark current (2 pA) at zero bias. Meanwhile, the device shows a high on/off ratio (>106), a large specific detectivity (>1012 Jones) and linear dynamic range (LDR = 137 dB) with excellent thermal and long-term stability. Furthermore, a tunable spectral response covering from the ultraviolet to visible range is also demonstrated. These results provide a simple avenue to realize self-driven and spectral tunable all-inorganic perovskite Schottky PDs with good stability.
关键词： all-inorganic perovskite,high temperature tolerance,tunable spectral response,vertical structure Schottky photodetector,weak-light sensitivity
更新于2025-09-23 15:19:57
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Quantum Dots and Applications
摘要： It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic ?elds such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be signi?cantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.
关键词： quantum dots,luminescent solar concentrator,photoluminescent,photovoltaic,photodetector,charge transfer,electroluminescent
更新于2025-09-23 15:19:57
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Dip coated TiO2 based metal-semiconductor-metal ultraviolet photodetector for UV A monitoring
摘要： Metal-Semiconductor-Metal ultraviolet photodetector was fabricated by painting silver contacts on dip coated TiO2 thin films. The number of deposition cycles have influence on physiochemical properties and UV sensing properties. The UV photodetector properties were studied by illuminating devices with light intensity of 1.8 μW/cm2 and 5 V bias. The fabricated devices show ohmic I–V characteristics. The maximum photocurrent of 0.64 μA is obtained at 365 nm for film deposited at 8 cycles. The highest photoresponsivity obtained for C8 sample under UV illumination of 365 nm is 2.15 A/W at 5 V bias. The fast rise and fall times obtained for fabricated device are 17 s and 19 s. The optical switching characteristics show good reproducibility and stability.
关键词： Photoresponsivity,Dip coating,MSM UV photodetector,Titanium dioxide
更新于2025-09-23 15:19:57
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Polarization driven self-biased and enhanced UV - visible photodetector characteristics of ferroelectric thin film
摘要： In this work, a self-powered UV?visible photodetector characteristics of the polycrystalline BiFeO3 thin film exhibiting pronounced photo-response under both UV and visible light are demonstrated. Interestingly, the film displays switchable photodetector characteristics in accordance with the polarization switching properties and thereby confirms the role of polarization driven depolarization field on the observed properties. Importantly, the photodetector performance parameters such as responsivity (23.9 × 10?4 AW?1), detectivity (2.2 × 1010 Jones), photoconductive gain (8.5 × 10?3), and external quantum efficiency (5.3 %) observed under UV light are 2 to 4 order of magnitude higher than the values reported in similar oxide ferroelectric systems. These studies establish the application of polycrystalline BiFeO3 film as a self-powered UV ? visible photodetector.
关键词： BiFeO3,ferroelectrics,thin-film,UV ? visible photodetector,self-powered
更新于2025-09-23 15:19:57
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Performance analysis of p-LPZO/n-GZO and p-SZO/n-GZO homojunction UV photodetectors
摘要： A comprehensive analytical model for the dark current and photoresponsivity of ZnO thin film based homojunction ultraviolet (UV) photodetector (PD) is proposed in this study. The detailed insight about the effects of different acceptor doping materials in the illuminated surface layer is presented in this work. The recombination velocity of the carriers and the effect of applied reverse bias, specifically on the responsivity of p-n homojunction based UV PD are elucidated. The impact of two different types of dual ion beam sputtering (DIBS)-grown acceptor-doped ZnO (Sb:ZnO and Li-P:ZnO) materials on the responsivity is also discussed. The investigation results reveal that an increase in applied reverse bias results in higher responsivity due to depletion region increase leading to higher charge carrier photogeneration. Further, on comparing the results with the experimentally reported ZnO-based homojunction UV PDs, it is found that, by incorporating Sb:ZnO as p-type layer, dark current and responsivity values are improved by ~38 and ~63.7%, respectively. Hence, the developed model is significant for the design optimization of high-performance ZnO thin film-based UV homojunction PDs.
关键词： Dual ion beam sputtering (DIBS),Responsivity,Photodetector (PD),Ultraviolet (UV)
更新于2025-09-23 15:19:57
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High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films
摘要： Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve the performance and expand the detection range. Here, high-quality Cu1-xNixO (x=0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1-xNixO films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6×10-7 A) under 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176 %) are also achieved for Cu0.8Ni0.2O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high performance and wide detection range p-type metal oxide photodetectors.
关键词： Copper oxide,Ni doping,photodetector,responsivity,external quantum efficiency
更新于2025-09-23 15:19:57
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A self-powered photodetector based on two-dimensional boron nanosheets
摘要： Owing to their intriguing characteristics, the ongoing pursuit of emerging mono-elemental two-dimensional (2D) nanosheets beyond graphene is an exciting research area for next-generation applications. Herein, we demonstrate that highly crystalline 2D boron (B) nanosheets can be efficiently synthesized by employing a modified liquid phase exfoliation method. Moreover, carrier dynamics has been systematically investigated by using femtosecond time-resolved transient absorption spectroscopy, demonstrating an ultrafast recovery speed during carrier transfer. Based on these results, the optoelectronic performance of the as-synthesized 2D B nanosheets has been investigated by applying them in photoelectrochemical (PEC)-type and field effect transistor (FET)-type photodetectors. The experimental results revealed that the as-fabricated PEC device not only exhibited a favourable self-powered capability, but also a high photoresponsivity of 2.9–91.7 μA W?1 in the UV region. Besides, the FET device also exhibited a tunable photoresponsivity in the range of 174–281.3 μA W?1 under the irradiation of excited light at 405 nm. We strongly believe that the current work shall pave the path for successful utilization of 2D B nanosheets in electronic and optoelectronic devices. Moreover, the proposed method can be utilized to explore other mono-elemental 2D nanomaterials.
关键词： two-dimensional boron nanosheets,optoelectronic devices,carrier dynamics,liquid phase exfoliation,photodetector
更新于2025-09-23 15:19:57
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Self-powered ultra-broadband and flexible photodetectors based on the bismuth films by vapor deposition
摘要： Bismuth (Bi), as a topological semi-metallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO2/Si (SiO2) and polyimide (PI) substrates. The Bi films were utilized further to fabricate rigid and flexible photodetectors. The rigid photodetector based on Bi/SiO2 show fast, highly stable, self-powered, and ultra-broadband photoresponses. The flexible Bi/PI photodetector exhibits durability and reproducibility in photoresponse behaviors under bending with various curvature radius and after hundreds of bending cycles. Our results demonstrated that the Bi films by vapor deposition have great application potentials in next generation of optoelectronic devices.
关键词： flexible,vapor deposition,ultra-broadband,self-powered,photodetector,Bi films
更新于2025-09-23 15:19:57
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Perovskite Transparent Conducting Oxide for the Design of Transparent, Flexible and Self-Powered Perovskite Photodetector
摘要： Transparent and flexible electronic devices are highly desired to meet the great demand for next-generation devices with lightweight, flexible and portable. Transparent conducting oxides (TCOs), such as indium-tin oxide (ITO), serve as fundamental components for the design of transparent and flexible electronic devices. However, indium is rare and expensive. Herein, we report the fabrication of low-cost perovskite SrVO3 TCO films on transparent and flexible mica substrates, and further demonstrate its utilization as a TCO electrode for building a transparent, flexible and self-powered perovskite photodetector. Superior stable optical transparency and electrical conductivity retain in SrVO3 after bending up to 105 cycles. Without an external power source, the constructed all-perovskite photodetector exhibits a high responsivity (42.5 mA W-1), fast response time (3.09/1.23 ms), as well as an excellent flexibility and bending stability after dozens of cycles of bending at the extremely 90 bending angle. Our results demonstrate that low-cost and structural compatible transition metal-based perovskite oxides, like SrVO3, as TCO electrodes have huge potential for building high-performance transparent, flexible and portable smart electronics.
关键词： Transparent conducting oxides,flexible,SrVO3,perovskite,self-powered photodetector
更新于2025-09-23 15:19:57