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Nitrogen-Doped Titanium Dioxide Thin Films Formation on the Surface of PLLA Electrospun Microfibers Scaffold by Reactive Magnetron Sputtering Method
摘要： Nitrogen-doped thin titanium dioxide films formed by the reactive magnetron sputtering method on the surface of PLLA electrospun microfibers scaffold were investigated. It was shown that the chemical composition of the films is shifting from titanium dioxide (TiO2) composites saturated with C–NH, C=N, N–C=N and HN–C=O compounds to solid solutions of titanium oxides (TixOy) and titanium oxynitrides (TiOxNy) with the increased time of the treatment. An empirical model describing changes in the chemical composition of the surface due to the treatment was proposed. It was shown that the modification of the PLLA microfibers scaffolds surface improves cell-scaffold and cell–cell interactions with the highest number of viable adherent cells observed on the scaffold treated for 4 min.
关键词： Scaffolds,Reactive magnetron sputtering,Thin films,Biocompatibility
更新于2025-11-21 11:24:58
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Electrochromic device with Magnetron sputtered Tungsten Oxide (WO<sub>3</sub>) and nafion membrane: performance with varying Tungsten Oxide thickness- A report
摘要： Electrochromics is the emerging technology for energy conservation and indoor climatic control through smart windows. In this study we are reporting four layer electrochromic device: ITO (400nm)/ commercially procured Nafion (183μm) / WO3 (44nm to 200nm)/ ITO (400nm). The active area (A) of the electrochromic devices are 3cm2. The tungsten oxide (WO3) and ITO thin films have been deposited at room temperature (300 K) by reactive DC Magnetron sputtering. The sheet resistance of ITO is 20 ?/□. The “as deposited” WO3 films are amorphous and have high optical transmission (75%- 85%) in the visible spectrum. The optical band gap decreases with increasing thickness of WO3 thin films. The coloration efficiency (CE) of the electrochromic device increases with increasing thickness of the WO3 layer. The CE for the device with WO3 thickness 200 nm is 184 cm2/C: the highest reported so far for a hybrid electrochromic device. The increase in the CE with thickness has been explained (for the first time) by replacing the surface charge density (Q/A) with the volume charge density (Q/A*t) in the coloration efficiency formula derived from the Beer Lambert’s law.
关键词： coloration efficiency,electrochromism,nafion and Magnetron sputtering.,Tungsten oxide
更新于2025-11-19 16:56:35
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Deposition of TiO <sub/>2</sub> photocatalyst on polyethylene terephthalate or polyimide polymer films by reactive sputtering for flexible photocatalytic sheets
摘要： Polycrystalline anatase TiO2 films were deposited by rf reactive magnetron sputtering on polyethylene terephthalate (PET) or polyimide (PI) films with different buffer layers, such as SiO2 or Zn2SnOx (ZTO) between the TiO2 film and the substrate. Such TiO2/(SiO2 or ZTO)/(PET or PI) sheets with high transmittance in the visible region of light performed high photo-decomposition ability of CH3CHO under the UV irradiation of the black light centered at 352 nm. In the case of using SiO2 as the buffer layer, “nano-pore layer” was observed clearly in full area of the polymer substrates close to the buffer layers after the UV irradiation, whereas such degradation was suppressed drastically in the case of using ZTO as the buffer layer. Such photocatalytic sheets performed also photo-induced hydrophilicity by the UV irradiation, where the contact angle to pure water became around 5O under the UV irradiation. After additional deposition of SiO2 by the reactive sputtering under rather high total gas pressure of 3.0 Pa on the outermost surface of the TiO2 films, the photo-induced hydrophilicity was maintained for more than 98 days in the dark. Such 3-layerd SiO2/TiO2/ZTO on PET or PI substrates should be the promising flexible photocatalytic sheets with the retentional photo-induced hydrophilicity.
关键词： PET,TiO2,Photocatalyst,PI,Reactive Sputtering,Flexible substrate
更新于2025-11-19 16:51:07
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Photovoltaic Properties and Series Resistance of <i>p</i> -Type Si/Intrinsic Si/ <i>n</i> -Type Nanocrystalline FeSi <sub/>2</sub> Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering
摘要： p-Type Si/intrinsic Si/n-type nanocrystalline iron disilicide heterojunctions were created by utilizing facing targets direct-current sputtering at the pressure of 1.33 × 10?1 Pa that investigated the photovoltaic properties. They exhibited a large leakage current and a small energy conversion ef?ciency of 0.62%. From using the method of Nicollian and Brews, the series resistance (Rs) values at zero bias voltage were 7.40 Ω at 2 MHz and 7.57 Ω at 50 kHz, respectively, which were in agreement with that estimated by the means of Norde. From applying the method of Hill-Coleman, the interface state density (Nss) values were 3.15 × 1015 cm?2 eV?1 at 50 kHz and 8.93 × 1013 cm?2 eV?1 at 2 MHz. The obtained results revealed the presence of Rs and Nss at the junction interface, which should be the potential cause of spoiled photovoltaic performance in the heterojunctions.
关键词： Heterojunctions,Facing-Targets Direct-Current Sputtering,Nanocrystalline Iron Disilicide,Series Resistance,Interface State Density
更新于2025-11-14 17:28:48
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Electrochromic Properties of Nanostructured WO <sub/>3</sub> Thin Films Deposited by Glancing‐Angle Magnetron Sputtering
摘要： Tungsten oxide thin films are prepared by glancing-angle reactive magnetron sputtering at room temperature. The surface and cross-section morphologies are characterized by FE-SEM and TEM. The electrochromic properties of the thin films are studied using a three-electrode system in 1 m LiClO4/PC solution. When the glancing angle is kept at 80°, a nanocolumnar structured film is obtained. This nanocolumnar structured film shows a lower driving potential and better stability compared to the dense film. The charge capacity per unit area of the nanocolumnar structured film is determined to be 30.85 mc cm?2. The diffusion rates of injection and detachment of ions are determined to be Din = 6.57 × 10?10 cm2 s?1 and Dde = 6.55 × 10?10 cm2 s?1 under an applied potential of ±1.2 V, respectively. The optical modulation amplitude of the nanocolumnar structured film reaches 65% at a wavelength of 600 nm and the optical density is superior to that of the dense film.
关键词： nanostructured,electrochromic,WO3 thin films,glancing angle,magnetron sputtering
更新于2025-11-14 17:03:37
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Pressure effects in RF and DC sputtered Sb2Te3 thin films and its applications into solar cells
摘要： In this work we developed the synthesis and characterization of Sb2Te3 thin films, which were grown by RF as well as DC sputtering as a function of the deposition pressure (Pd), 5–15 mTorr. Sb2Te3 films were characterized through X-Ray Diffraction, Energy Dispersive Spectrometry (EDS), Scanning Electron Microscopy (SEM) and electrical resistivity measurements. As a part, contact layer, of the CdTe-based Solar Cell, Current-Voltage (I–V) as well as External Quantum Efficiency (EQE) measurements were carried out. Our results indicate that the radio-frequency sputtered Sb2Te3 are polycrystalline with predominant rhombohedral crystalline structure, whereas the DC-sputtered films crystallized mainly in the monoclinical structure. Both set of samples showed a resistivity of the order of 10?4 Ω-cm. Concerning the CdTe-based solar cell, the incorporation of the Sb2Te3 as a back surface film in the back contact improves the solar cell efficiency up to 8.01%, 10 mTorr pressures into the growth chamber, as compared to the CdTe-based solar cell, 4.82% efficiency, without the Sb2Te3 layer.
关键词： p+ material,CdTe solar cells,Sputtering RF and DC,Sb2Te3
更新于2025-11-14 15:15:56
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Obtainment of Stabilized Zirconium Dioxide via the High-Frequency Magnetron Sputtering of a Metallic Target
摘要： The influence of the yttrium concentration on the structure of coatings prepared via the high-frequency magnetron sputtering of a metal target is investigated. The results of coating deposition in pure argon and a mixed (Ar + O2), reactive medium are discussed. It is demonstrated that a nonequilibrium body-centered-cubic solid solution based on zirconium with an extended homogeneous region (up to 16 at % Y) is formed under the condition that a target is sputtered in pure argon. During reactive-coating deposition, the formation of cubic or tetragonal zirconium dioxide is generated depending on the yttrium concentration. The tetragonal structure is created if the yttrium concentration is 8 at %. It is found that the obtained tetragonal zirconium dioxide is thermally stable both in terms of structure and in morphology upon heat treatment in air at 1100°C for 11 h.
关键词： zirconium dioxide,magnetron sputtering,nanostructured film,composite,coating
更新于2025-11-14 15:13:28
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Optimal target sputtering mode for aluminum nitride thin film deposition by high power pulsed magnetron sputtering
摘要： Low surface roughness, low residual stress, and (002) textured aluminum nitride (AlN) thin films are favored for applications in microelectronic and optoelectronic devices. In this paper, AlN thin films were deposited by reactive high power pulsed magnetron sputtering (HPPMS). The effect of aluminum target sputtering mode and sputtering power on thin film residual stress, crystalline structure, surface roughness, and morphology of AlN thin films was studied. The results indicate that, with Al target sputtering mode transfer from metallic mode to transitional and compound modes, respectively, the number of Al species decrease, and ion-to-neutral ratio of Al species increase. Comparing the AlN thin film deposited in compound mode with that deposited in transitional mode, the latter exhibited lower surface roughness and residual stress. In addition, AlN thin film with (002) texture and lower residual stress is obtained by increasing sputtering power in transitional mode. For fabricating AlN film via reactive HPPMS with a particular (002) texture, low surface roughness, and residual stress, sputtering the target in the transitional mode with high sputtering power is optimal.
关键词： Aluminum nitride,Microstructure,Texture,High power pulsed magnetron sputtering,Sputtering modes,Sputtering power
更新于2025-09-23 15:23:52
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Tuning the excitonic properties of ZnO:Sn thin films
摘要： The effects of Sn doping, deposition temperature, and post-annealing treatment on the excitonic behavior of ZnO:Sn (SZO) thin films deposited by dc-unbalanced magnetron sputtering have been studied. Sn doping induces the decrease of grain size and promotes the formation of oxygen vacancy-related trap states as indicated by A1 LO mode in Raman spectra and green emission in photoluminescence spectra. Using a critical point analysis of the dielectric functions from spectroscopic ellipsometry data analysis, Sn doping blueshifts the excitonic absorption and decreases the exciton lifetime via screening the electron-hole Coulomb interaction. By varying the deposition temperature from room temperature up to 300 °C (SZO-3), there is no change in excitonic absorption. Then, annealing of SZO-3 at 600 °C under oxygen environment (SZO-6) strongly improves the excitonic absorption as well as its lifetime. Critical point analysis on SZO-6 sample clearly reveals the excitonic transition at 3.38 eV and exciton-phonon complexes at 3.66 eV. Thus, the result is important to improve the functionality of doped ZnO with strong excitonic absorption for optoelectronic applications.
关键词： Annealing,Dc-unbalanced magnetron sputtering,Exciton,Thin films,Sn doped ZnO
更新于2025-09-23 15:23:52
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Fabricating ZnSnN2 with cosputtering
摘要： The deposition of ZnSnN2 by co-sputtering was studied systematically. Different deposition parameters, including substrate temperatures, N2 flow rates and different work pressure etc. were tried and the structural, optical and electrical properties were studied. The results show that the deposition parameters to fabricate ZnSnN2 are relatively wide. The suitable substrate temperature to obtain polycrystalline ZnSnN2 is around 350 °C when other parameters are kept constant. Relatively larger N2 flow rate can suppress the formation of metallic phase such as Sn and favour the deposition of ZnSnN2 with relatively pure phase, with other parameters to be constant. The addition of the substrate bias voltage or a relatively lower power of the Sn target is harmful to the film crystallization of ZnSnN2. The samples are considered to be wurtzite due to the absence of the orthorhombic (110) and (011) peaks at 20°–22°. The hexagonal lattice constants a and c are about 3.36–3.40 ? and 5.49 ?, respectively. The sputtering pressure can affect the structural and electrical properties of ZnSnN2. ZnSnN2 prepared at larger work pressure such as 7.0 Pa has a lower electron density (6.72 × 10^19 cm^-3) and a higher mobility (24.3 cm^2 V^-1 s^-1) as compared with those prepared at 1.0 and 3.0 Pa.
关键词： Sputtering,Wurtzite,Degenerate,ZnSnN2,Mobility
更新于2025-09-23 15:23:52