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3.6: High‐Reliability OLED Display Panel using Top Gate IGZO TFTs for 55inch UHD TVs
摘要： To improve electrical characteristics of top gate a-IGZO TFT we have been optimized the oxygen in IGZO layer and decreased the excess oxygen of Gate Insulator layer. We achieved that the uniformity of threshold voltages of a-IGZO TFTs on Gen. 8.5 glass is approximately 0.61V. Also, we achieved BTS characteristic about Δ0.1V at 2hr PBTS and Δ-0.2V at 2hr NBTiS. In addition, we demonstrated the 55-in 4K UHD OLED TV with high reliability Image sticking.
关键词： Thin Film Transistor,OLED Display,Oxide Semiconductor,Image Sticking
更新于2025-09-11 14:15:04
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Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors
摘要： This work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress conditions, a new method for driving a photo TFT with a negative gate-source voltage is proposed to suppress the degradation of the photocurrent. The effectiveness of the newly proposed method is verified using our previously developed white-light photocurrent gating (WPCG) structure, the measurement of photocurrents, and the established models of red, green, and blue photo TFTs. An accelerated lifetime test of the fabricated circuit was carried out at 70 ?C and under the illumination of ambient light for 504 hours, demonstrating that the proposed method improves the long-term reliability of optical sensors.
关键词： optical sensor,Hydrogenated amorphous silicon thin-film transistor,long-term reliability
更新于2025-09-11 14:15:04
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High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process
摘要： Zinc-Tin-Oxide (ZTO) thin films were fabricated using a simple and eco-friendly sol-gel method and their application in thin film transistors (TFTs) was investigated. Annealing temperature has a crucial influence on the structure and electrical properties of sol-gel ZTO thin films. The ZTO thin films annealed at 300-600 (cid:1) revealed smooth and uniform surfaces with amorphous state, in addition, a high optical transparency over 90% of the ZTO films in the visible range was obtained. The electrical performance of ZTO TFTs showed obvious dependence on annealing temperature. The ZTO TFTs annealed at 500 (cid:1) showed a high carrier mobility of 5.9 cm2/Vs, high on/off current ratio (Ion/off) of 106-107, and threshold voltage (Vth) of 1.03V. To demonstrate the application of sol-gel ZTO films in low-power display fields, we also fabricated ZTO TFTs with a solution-processed high-permittivity (high-k) ZrTiOx dielectric layer. The ZTO/ ZrTiOx TFTs showed high mobility of 17.9 cm2/Vs and Ion/off of 105-106 at a low operation voltage of 3 V, indicating that Indium-free ZTO thin films would be potential candidates for low cost, high performance oxide TFT devices.
关键词： oxide semiconductor,sol-gel process,thin-film transistor
更新于2025-09-11 14:15:04
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[IEEE 2018 76th Device Research Conference (DRC) - Santa Barbara, CA, USA (2018.6.24-2018.6.27)] 2018 76th Device Research Conference (DRC) - Exploring Silver Contact Morphologies in Printed Carbon Nanotube Thin-Film Transistors
摘要： Demand for ubiquitous and flexible electronics to facilitate the rapid growth of Internet-of-Things (IoT) technologies has driven the advancement of printed electronics for low-cost and high-throughput manufacturing. The carbon nanotube thin-film transistor (CNT-TFT) is one of the most promising options for printed electronics due to its mechanical flexibility, compatibility with low-temperature fabrication, and relatively high mobility [1]. Meanwhile, Ag nanoparticles remain the most widely used conductive material in printed inks due to their superb dispersion stability, high conductivity, and relatively low cost [2]. However, limited studies have explored the impact of different printed metallic contacts in CNT-TFTs [3], even though the contact interfaces are one of the leading factors limiting performance. In this work, the impact of Ag contact morphology is studied for the first time by fabricating hundreds of CNT-TFTs using an aerosol jet printer to systematically investigate three morphologies (nanoparticle (NP), nanoflake (NF), and nanowire (NW), as seen in Fig. 1) and their impact on device performance. Using what is learned from the contact morphology results, the first CNT-TFTs printed without removal of the substrate from the printer (full “print-in-place” additive devices) are also demonstrated.
关键词： printed electronics,aerosol jet printer,contact morphology,carbon nanotube thin-film transistor,Ag nanoparticles
更新于2025-09-10 09:29:36
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24.1: <i>Invited Paper:</i> Flexible Oxide TFTs for Bendable and flexible displays
摘要： We review in this talk the highly stable, high performance E/S a-IGZO TFT on plastic substrate by using split active and S/D electrodes. The TFTs exhibit high mobility of 74 cm2/Vs and extremely stable behavior under bias-stress and mechanical stress. The TFT process is same as conventional one with only design change. Therefore, this technology can be used for the manufacturing of flexible and bendable AMOLED on plastic substrate
关键词： thin-film transistor (TFT),high mobility,Oxide,split
更新于2025-09-10 09:29:36
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Photocurrent Characteristics of Zinc-Oxide Films Prepared by Using Sputtering and Spin-Coating Methods
摘要： The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.
关键词： Phototransistor,Sputter,Thin film transistor,Solution process,Zinc Oxide
更新于2025-09-10 09:29:36
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Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films
摘要： Effects of exposure to ultraviolet (UV) photons and thermal treatments on solution-processed amorphous indium gallium zinc oxide (a-IGZO) films were investigated by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy. As a result, oxygen vacancies obviously become more abundant in the films sintered at 250 or 300 ?C by the exposure to 7.21 eV photons and less abundant by the subsequent thermal treatment at 250 ?C in air. The drain current also clearly becomes smaller in a thin film transistor fabricated using the IGZO film in a manner opposite to the abundance of oxygen vacancies. That is, the drain current becomes smaller by the UV irradiation and returns to the original high value by the subsequent thermal treatment. This indicates that oxygen vacancies act as trapping centers or scattering centers of electrons. In addition, the reversible change of the drain current with the cycle of UV irradiation and the thermal treatment opens the possibility of the use of the IGZO films as a UV sensor.
关键词： oxygen vacancies,amorphous indium gallium zinc oxide,thin film transistor,UV irradiation,thermal treatment
更新于2025-09-10 09:29:36
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Multioutputs single-stage gate driver on array with wide temperature operable thin-film-transistor liquid-crystal display for high resolution application
摘要： A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7‐inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8‐phase clocks with 75% overlapping and dual‐side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90°C and ?40°C) for simulation, and operates stably over 800 hours at 90°C for measurement. Besides, this design is successfully demonstrated in a 10.7‐inch full HD (1080 × RGB×1920) TFT‐liquid‐crystal display (LCD) panel.
关键词： thin film transistor (TFT),wide temperature,high reliability,gate driver,amorphous silicon (a‐Si)
更新于2025-09-09 09:28:46
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Actuator-Control Circuit Based on OTFTs and Flow-Rate Estimation for an All-Organic Fluid Pump
摘要： In this paper, we report the design of an organic thin-film transistor (OTFT) driver circuit for the actuator of an organic fluid pump, which can be integrated in a portable-size fully-organic artificial lung. Compared to traditional pump designs, lightness, compactness and scalability are achieved by adopting a creative pumping mechanism with a completely organic-material-based system concept. The transportable fluid volume is verified to be flexibly adjustable, enabling on-demand controllability and scalability of the pump’s fluid-flow rate. The simulations, based on an accurate surface-potential OTFT compact model, demonstrate that the necessary driving waveforms can be efficiently generated and adjusted to the actuator requirements. At the actuator-driving-circuit frequency of 0.98 Hz, an all-organic fluid pump with 40 cm length and 0.2 cm height is able to achieve a flow rate of 0.847 L/min, which satisfies the requirements for artificial-lung assist systems to a weakened normal lung.
关键词： organic thin-film transistor,fluid volume,organic actuator,organic circuit,HiSIM-organic model,artificial lung,circuit simulation
更新于2025-09-09 09:28:46
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Geometric influence of cylindrical surface curvature on the electrostatics of thin film transistors
摘要： Thin film transistor (TFTs) based integrated circuits on flexible substrates promise interesting approaches to human interface systems. TFTs have been fabricated on textured surfaces such as textiles, paper, artificially corrugated substrates and fibers. This can result in the metal-insulator-semiconductor (MIS) stack being significantly distorted from a planar geometry to having high curvature. Although the direct deposition on textured surfaces does not result in mechanical stress (as opposed to that seen during bending, buckling, wrinkling), the geometry of high curvature can influence the characteristics of the TFT. Here we present a closed form analytical model describing the impact of high curvature on the electrical performance of the TFT. Models are obtained from the solution to the Poisson-Boltzmann equation in polar co-ordinates and are limited to cylindrical surface (zero Gaussian curvature) with the ratio of radius of curvature of the semiconductor-insulator interface, rsi, to insulator thickness, ti, ranging from rsi/ti = 2 to rsi/ti = 50. Models are verified using Technology Computer-Aided Design (TCAD) simulations performed using amorphous galium indium zinc oxide (a-GIZO). Studies show that when the semiconductor-insulator interface is curved convex (normal vector into the gate) the interfacial free carrier concentration increases by 50% (for rsi/ti = 2) to 8.5% (for rsi/ti = 15) as compared to planar TFTs. On the other hand, when the curvature is concave, the free carrier concentration decreases by those percentages as compared to planar TFTs. Thus curvature can modulate TFT transconductance. Models show that the impact of curvature becomes negligible (< 4% variation) for rsi/ti > 25. Techniques to generalize the results to periodic cylindrical surfaces and other semiconducting materials are discussed along with experimental verification. This work forms an analytical basis to understand the behavior of TFTs fabricated on textured substrates.
关键词： textured surfaces,TCAD simulations,a-GIZO,flexible substrates,Thin film transistor,Poisson-Boltzmann equation
更新于2025-09-09 09:28:46