修车大队一品楼qm论坛51一品茶楼论坛,栖凤楼品茶全国楼凤app软件 ,栖凤阁全国论坛入口,广州百花丛bhc论坛杭州百花坊妃子阁

oe1(光电查) - 科学论文

过滤筛选

出版时间
  • 2018
研究主题
  • thin-film transistors
  • N2O plasma treatment.
  • amorphous InGaZnO
  • gate-bias stress
  • stability
应用领域
  • Electronic Science and Technology
机构单位
  • Peking University
567 条数据
?? 中文（中国） ▾

  • Electrical and Mechanical Properties of CeO2-Based Thin-Film Coatings Obtained by Electrophoretic Deposition

    摘要： Nanometer Ce0.8(Sm0.75Sr0.20Ba0.05)0.2O2 – δ powder with mean nanoparticle size of 15 nm has been obtained by laser evaporation of a solid-phase target followed by condensation. The nanopowder has been used to prepare suspensions for electrophoretic deposition in a mixed isopropanol : acetyl acetone = 50 : 50 vol % disperse medium offering the unique property of self-stabilization. Optimal conditions for electrophoretic deposition have been found, and uniform thin-film electrolytic coatings have been formed on a La2NiO4 cathodic carrier substrate (12–15% porosity). It has been shown that the resulting electrolyte offers a high adhesivity and has, after sintering at 1400°C, a compact granular structure with grains from 1 to 8 μ m in size. The conductivity of the 2-μ m-thick electrolyte equals 0.1 S/cm at 650°C.

    关键词： solid oxide fuel cells,nanopowder,electrophoretic deposition,conductivity,CeO2-based thin-film coatings

    更新于2025-09-09 09:28:46

  • Actuator-Control Circuit Based on OTFTs and Flow-Rate Estimation for an All-Organic Fluid Pump

    摘要： In this paper, we report the design of an organic thin-film transistor (OTFT) driver circuit for the actuator of an organic fluid pump, which can be integrated in a portable-size fully-organic artificial lung. Compared to traditional pump designs, lightness, compactness and scalability are achieved by adopting a creative pumping mechanism with a completely organic-material-based system concept. The transportable fluid volume is verified to be flexibly adjustable, enabling on-demand controllability and scalability of the pump’s fluid-flow rate. The simulations, based on an accurate surface-potential OTFT compact model, demonstrate that the necessary driving waveforms can be efficiently generated and adjusted to the actuator requirements. At the actuator-driving-circuit frequency of 0.98 Hz, an all-organic fluid pump with 40 cm length and 0.2 cm height is able to achieve a flow rate of 0.847 L/min, which satisfies the requirements for artificial-lung assist systems to a weakened normal lung.

    关键词： organic thin-film transistor,fluid volume,organic actuator,organic circuit,HiSIM-organic model,artificial lung,circuit simulation

    更新于2025-09-09 09:28:46

  • Annealing effects on the properties of tin thin films

    摘要： The structure, absorption coefficient and electrical resistivity studies on TiN thin films are presented. The film of thickness 240 nm was grown on Si (100) substrate by DC reactive sputtering at an average deposition rate of ～8 nm/min. After deposition the samples were annealed for 1 h at 600 °C and 2 h at 700 °C in nitrogen ambient and vacuum furnace, respectively. Structural characterizations were performed by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical properties were investigated by spectroscopic ellipsometry while a four point probe was used for electrical characterization. It was found that the post-deposition annealing of the films did not cause any variation in stoichiometry, but strongly affects the structural parameters such as lattice constant, micro-strain and grain size. The observed increase in the grain size after annealing leads to significantly lower value of the coefficient of absorption. These changes could be directly correlated with variation of electrical properties of TiN thin films.

    关键词： RBS,annealing,sputtering,thin film,XRD,titanium nitride,TEM

    更新于2025-09-09 09:28:46

  • Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature

    摘要： In this paper, bottom-gate top-contact thin film transistors (TFTs) with a double active layer of InZnO:N/InZnSnO (IZO:N/IZTO) were successfully prepared. The IZO:N/IZTO thin films were deposited on SiO2/p-Si substrates by radio frequency (RF) magnetron sputtering at room temperature. The transmittance of both the IZO:N thin film and the IZTO thin film were more than 80% in the range of visible light. The IZO:N thin film and the IZTO thin film were found to be amorphous at the annealing temperature of 325?°C by means of X-ray diffraction (XRD). The double active layer IZO:N/IZTO TFT exhibited good electrical performance with a saturation mobility of 41.5?cm2?V?1?s?1, an on/off current ratio of 2.88 × 105, and a threshold voltage of 1.0?V, which achieved high mobility at the low annealing temperature of 325?°C.

    关键词： low annealing temperature,RF magnetron sputtering,high mobility,InZnO:N/InZnSnO,thin film transistors

    更新于2025-09-09 09:28:46

  • Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer

    摘要： In this paper, a tunable acid-resistant Zr-doped indium oxide (ZrInO) semiconductor material was developed. Detailed studies showed that the acid resistance of ZrInO thin films is tunable and increases with the increase in annealing temperature. Taking advantage of this special property, we successfully fabricated back-channel-etched (BCE) thin-film transistors (TFTs) based on the tunable acid-resistant ZrInO thin film. ZrInO-TFTs with BCE structure exhibited excellent electrical performance with a saturation mobility of 21.4 cm2V?1s?1, a subthreshold swing of 0.28 V/decade, and an on/off current ratio of 1.0 × 107. These results envision that the developed ZrInO semiconductor with tunable acid resistance has a good prospect for the channel layer of BCE-TFTs.

    关键词： oxide semiconductor,Anodic Al2O3,tunable acid-resistant Zr-doped indium oxide (ZrInO),back-channel etch (BCE),thin-film transistors (TFTs)

    更新于2025-09-09 09:28:46

  • Dimension Reduction for the Landau--de Gennes Model: The Vanishing Nematic Correlation Length Limit

    摘要： We study nematic liquid crystalline films within the framework of the Landau--de Gennes theory in the limit when both the thickness of the film and the nematic correlation length are vanishingly small compared to the lateral extent of the film. We prove \Gamma -convergence for a sequence of singularly perturbed functionals with a potential vanishing on a high-dimensional set and a Dirichlet condition imposed on admissible functions. This then allows us to prove the existence of local minimizers of the Landau--de Gennes energy in the spirit of [R. V. Kohn and P. Sternberg, Proc. Roy. Soc. Edinburgh Sect. A, 111 (1989), pp. 69--84] despite the lack of compactness arising from the high-dimensional structure of the wells. The limiting energy consists of leading order perimeter terms, similar to Allen--Cahn models, and lower order terms arising from vortex structures reminiscent of Ginzburg--Landau models.

    关键词： gamma convergence,thin film,nematic,dimension reduction

    更新于2025-09-09 09:28:46

  • Fractal simulation of thin film nucleation growth process using a diffusion-limited aggregation model

    摘要： In order to study the initial nucleation and growth process of the films, a two-dimensional (2D) DLA model was established, and fractal dimension was calculated by sandbox method. Compared with the experimental results, the model can well characterize the morphology of nucleation and growth in the initial stage of film growth. In addition to the number of particles and deposition probability involved in other studies, the size of substrate and the location of central particles are also considered in this work. The growth morphology, fractal dimension and the number of simulated steps are presented in this paper.

    关键词： thin film,Diffusion-limited aggregation,2D DLA,nucleation growth,fractal dimension

    更新于2025-09-09 09:28:46

  • Geometric influence of cylindrical surface curvature on the electrostatics of thin film transistors

    摘要： Thin film transistor (TFTs) based integrated circuits on flexible substrates promise interesting approaches to human interface systems. TFTs have been fabricated on textured surfaces such as textiles, paper, artificially corrugated substrates and fibers. This can result in the metal-insulator-semiconductor (MIS) stack being significantly distorted from a planar geometry to having high curvature. Although the direct deposition on textured surfaces does not result in mechanical stress (as opposed to that seen during bending, buckling, wrinkling), the geometry of high curvature can influence the characteristics of the TFT. Here we present a closed form analytical model describing the impact of high curvature on the electrical performance of the TFT. Models are obtained from the solution to the Poisson-Boltzmann equation in polar co-ordinates and are limited to cylindrical surface (zero Gaussian curvature) with the ratio of radius of curvature of the semiconductor-insulator interface, rsi, to insulator thickness, ti, ranging from rsi/ti = 2 to rsi/ti = 50. Models are verified using Technology Computer-Aided Design (TCAD) simulations performed using amorphous galium indium zinc oxide (a-GIZO). Studies show that when the semiconductor-insulator interface is curved convex (normal vector into the gate) the interfacial free carrier concentration increases by 50% (for rsi/ti = 2) to 8.5% (for rsi/ti = 15) as compared to planar TFTs. On the other hand, when the curvature is concave, the free carrier concentration decreases by those percentages as compared to planar TFTs. Thus curvature can modulate TFT transconductance. Models show that the impact of curvature becomes negligible (< 4% variation) for rsi/ti > 25. Techniques to generalize the results to periodic cylindrical surfaces and other semiconducting materials are discussed along with experimental verification. This work forms an analytical basis to understand the behavior of TFTs fabricated on textured substrates.

    关键词： textured surfaces,TCAD simulations,a-GIZO,flexible substrates,Thin film transistor,Poisson-Boltzmann equation

    更新于2025-09-09 09:28:46

  • Microstructural, optical, and electrical characteristics of Ni/C doped BST thin films

    摘要： In the present work the effect of simultaneous doping of carbon and nickel on the microstructural, optical, and electrical properties of barium strontium titanate (BST) is investigated. Thin films of BST were prepared by the sol-gel method in six different compositions ((Ba0.6Sr0.4)(NixCyTi1-x-y)O3): x = y = 0.00 (BST), x = 0.04 y = 0.00 (BST4N), x = 0.04 y = 0.01 (BST4N-1C), x = 0.04 y = 0.02 (BST4N-2C), x = 0.04 y = 0.03 (BST4N-3C), and x = y = 0.04 (BST4N-4C). Structural features and chemical bonds of the films were studied by TGA/DSC, XRD, FT-IR, and FE-SEM. The electrical and optical properties of the films were analysed by impedance spectroscopy and UV–VIS spectroscopy. The results show that addition of Ni and C leads to Ti4+-Ni2+ and Ti4+-C4+ replacements, respectively. These replacements lead to a gradual increase in the band gap energy; from 3.15 eV for BST to 3.44, 3.5, 3.66, 3.73 and 3.76 eV for BST4N, BST4N-1C, BST4N-2C, BST4N-3C, and BST4N-4C, respectively. In contrast, the dielectric loss decreases significantly from 0.055 for BST to 0.031, 0.033, 0.03, 0.022 and 0.01 for BST4N, BST4N-1C, BST4N-2C, BST4N-3C, and BST4N-4C, respectively. At the same time, the quality factor Qf (1/ tanδ) increases substantially from 15 for BST to 32, 30, 33, 44 and 87 for BST4N, BST4N-1C, BST4N-2C, BST4N-3C, and BST4N-4C, respectively. In contrast, the frequency dependence of the capacity decreases in comparison to un-doped BST. Among all films, the BST4N-4C had the highest figure of merit (FOM), least dielectric loss, and very low frequency-dependence, making it the best candidate for tuneable device applications.

    关键词： Ion doping,Sol-gel,Thin-film,BaSrTiO3,Dielectric properties,Optical properties

    更新于2025-09-09 09:28:46

  • Ag/TiO <sub/>2</sub> NPs/TiO <sub/>2</sub> TF/Si Based Non-Volatile Memristor Device for Neuromorphic Computing Applications

    摘要： Memristor device is a very promising emerging component for a revolution of the memory and computing applications in the recent years. It could be enhancing the field of artificial intelligence and helping the patients, suffering from various kinds of autism disorders, as well as in neuromorphic computing, neural networks, etc. This research article proposes fabricated non-volatile memristor device for neuromorphic computing applications. The demonstrate memory is based on Ag/TiO2 NPs/TiO2 TF/Si layers’ structure and achieves better conductivity and storage capacity, which could improve the performance of the neuromorphic computing as compared to conventional ones. The fabrication method of the proposed multi-layer memristor is examine with well precise techniques, which overcome the previous challenges. The surface morphology of the device is analysed by field emission gun scanning electron microscopy (FEGSEM) and Energy dispersive X-ray system. The rise time (Tr) of 2.5 s and fall time (Tf) of 3 s are demonstrated under ON/OFF white light illumination. While X-ray diffraction depicted that titanium dioxide nano particle, (TiO2 NPs) are crystalline in nature. Moreover, Photoluminescence and Raman analysis justify crystalline nature also and increasing oxygen vacancies concentration with the heating effect of TiO2 NPs. The electrical analysis reveals the driving mechanism under different sweeping voltages during SET and RESET resulting in low resistance state (‘ON’). Finally, capacitance-voltage characteristic of the proposed memory device shows excellent charge storage capacity within the dynamic range of operation.

    关键词： Titanium Dioxide Nano Particles (TiO2 NPs),Memristor Devices,Neuromorphic Computing,Titanium Dioxide Thin Film (TiO2 TF)

    更新于2025-09-09 09:28:46