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Covalently linked donor–acceptor dyad for efficient single material organic solar cells
摘要： A novel covalently linked donor–acceptor dyad comprising a dithienopyrrol-based oligomeric donor and a fullerene acceptor was synthesized and characterized. The concomitant effect of favorable optoelectronic properties, energy levels of the frontier orbitals, and ambipolar charge transport enabled the application of the dyad in simplified solution-processed single material organic solar cells reaching a power conversion efficiency of 3.4%.
关键词： donor–acceptor dyad,organic solar cells,ambipolar charge transport,solution-processed,power conversion efficiency
更新于2025-09-12 10:27:22
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Excellent ambipolar gas sensing response of Eu[Pc(OC4H9)8]2/acidified multiwalled carbon nanotubes hybrid at room temperature
摘要： A new hybrid material has been developed by mixing a sandwich-type double-decker, Eu[Pc(OC4H9)8]2 = 2,3,9,10,16,17,23,24-octabutoxyphthalocyaninate] with acidified multiwalled carbon nanotubes (aMWCNTs) through non-covalent interactions. The UV-vis spectrum, X-ray diffraction and scanning electron microscope have been employed to reveal the J-aggregate mode and optimized morphology of Eu[Pc(OC4H9)8]2 molecules in the Eu[Pc(OC4H9)8]2/aMWCNTs hybrid material. The gas-sensing devices based on this hybrid material are fabricated by a simple solvent-processing quasi-Langmuir–Sh?fer (QLS) progress. The n-type and p-type response is shown by the Eu[Pc(OC4H9)8]2/aMWCNTs hybrid film at room temperature. The detection limit of the hybrid for ammonia and nitrogen dioxide gas is 0.5 ppm and 0.3 ppm, respectively.
关键词： phthalocyanine,gas sensing,multiwall carbon nanotubes,ambipolar organic semiconductor,europium complex
更新于2025-09-12 10:27:22
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Suppressing Ambipolar Characteristics of WSe <sub/>2</sub> Field Effect Transistors Using Graphene Oxide
摘要： Monolayer (1L) tungsten diselenide (WSe2) is of interest for next generation ultrathin flexible electronic devices. However, typical WSe2 field effect transistors (FETs) show ambipolar characteristics that are not desirable for complementary field-effect-transistors and circuits. Here, significant suppression of the ambipolar characteristics of a 1L-WSe2 FET is demonstrated by using an electron withdrawing functional group of graphene oxide (GO). The pristine 1L-WSe2 FET shows n-type dominant ambipolar characteristics, whereas the GO coated 1L-WSe2 FET shows unipolar p-type behavior with a huge decrease (1/106) of current level of the n-channel. Also, the current level of the p-channel increases up to ten times that of the pristine 1L-WSe2 FET. These results are applicable for the realization of flexible nanoscale digital logic devices by using transition metal dichalcogenides.
关键词： field-effect-transistors,ambipolar,monolayer WSe2,unipolar,electron-withdrawing group
更新于2025-09-10 09:29:36
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Ambipolar carrier transport in an optically controllable diarylethene thin film transistor
摘要： Ambipolar carrier transport is demonstrated in an optically controllable organic field-effect transistor, where a benzothienothiophene-substituted diarylethene (BTT-DAE) thin film is employed directly as the transistor channel. A closed-ring isomer, which is produced by ultraviolet (UV) light irradiation, allows the carrier injection of both holes and electrons from source-drain electrodes into the BTT-DAE layer. Moreover, alternate UV or visible (VIS) light irradiation induces marked switching in the drain currents caused by reversible photoisomerization between closed-ring (semiconductor) and open-ring (insulator) isomers. The light-driven on/off ratio, which is defined by the ratio of the drain currents in the sample after UV or VIS light irradiation, reaches 240 for hole transport. The value is comparable to the gate-voltage-induced on/off ratio of 160. Our findings, therefore, have a potential to lead to the construction of new optoelectronic devices such as photoreconfigurable logic circuits and light emitting transistors.
关键词： Ambipolar operation,Optical switching,Organic field-effect transistor,Diarylethene,Photochromism
更新于2025-09-09 09:28:46
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Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
摘要： A method for producing simple and efficient thermally-activated delayed fluorescence organic light-emitting diodes (OLEDs) based on guest-host or exciplex donor-acceptor emitters is presented. With a step-by-step procedure, readers will be able to repeat and produce OLED devices based on simple organic emitters. A patterning procedure allowing the creation of personalized indium tin oxide (ITO) shape is shown. This is followed by the evaporation of all layers, encapsulation and characterization of each individual device. The end goal is to present a procedure that will give the opportunity to repeat the information presented in cited publication but also using different compounds and structures in order to prepare efficient OLEDs.
关键词： ambipolar,Donor-Acceptor,Thermally Activated Delayed Fluorescence,exciplex,Organic Electronics,patterning,thermal evaporation,Issue 141,OLED,Engineering
更新于2025-09-09 09:28:46
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Single crystal hybrid perovskite field-effect transistors
摘要： The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX3 (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX3 crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm2 V?1 s?1 in p and n channel devices respectively, with 104 to 105 on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics.
关键词： hybrid perovskites,field-effect transistors,single crystals,ambipolar transport,inverse temperature crystallization
更新于2025-09-09 09:28:46
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Ambipolar charge transport in an organic/inorganic van der Waals p–n heterojunction
摘要： Hybrid two-dimensional (2D) van der Waals (vdW) p–n junctions are attractive due to the controlled synthesis of the physical performances of organic semiconductors and quantum confinement effects of 2D materials, enabling highly tunable optoelectronic performances as well as low-cost processability. Here, hybrid 2D heterostructures are fabricated using a p-type semiconducting polymer (PDVT-10) and n-type MoS2. An ultra-thin film (B9 nm) of the PDVT-10 polymer is formed using the Langmuir–Schaefer (LS) technique. Large-scale MoS2 monolayers are prepared using a chemical vapor deposition (CVD) method. The PDVT-10/MoS2 vertical heterojunction devices show ambipolar charge transport properties with a p-type maximum field-effect mobility of 0.3 cm2 V(cid:2)1 s(cid:2)1 and an n-type maximum field-effect mobility of 2.45 cm2 V(cid:2)1 s(cid:2)1. In addition, the heterojunctions exhibit a great photoresponse under white light as well as a clear rectifying behavior.
关键词： PDVT-10,p–n heterojunction,organic/inorganic,van der Waals,ambipolar charge transport,MoS2
更新于2025-09-09 09:28:46
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Relationship Between the Mobility and the Schottky Contact in Indium-Gallium-Zinc-Oxide Thin Film
摘要： This presents the contact mechanism to understand the relationship between the Schottky contact and tunneling phenomenon on in the IGZO (Indium Gallium Zinc Oxide) Thin Film. The tunneling transistors with bi-directional ambipolar transfer characteristics were made by high potential barriers at the Schottky contact related to the depletion layer. The IGZO thin film transistor was prepared on SiOC with various annealing temperatures of 100 °C～400 °C. The performance of TFT was improved at SiOC annealed at 300 °C with the Schottky contact. The IGS curves of TFT with SiOC annealed at 300 °C showed high Ion/Ioff ratio and without the threshold voltage shift, when applied at VDS = 0.0001 V, because of the tunneling phenomenon from the band to band of diffusion currents through deep potential barrier.
关键词： IGZO,Schottky Contact,SiOC,Diffusion Current,Ambipolar Transfer Characteristics
更新于2025-09-04 15:30:14