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Recent Developments in Photovoltaic Materials and Devices || Conductive Copper Paste for Crystalline Silicon Solar Cells
摘要： In photovoltaic industries, the main technique of metallization is screen printing with silver pastes due to its simple and quick process. However, the expensive price of silver paste is one of the barriers to the production of low-cost solar cells. Therefore, the most focused target in photovoltaic research is the decreasing consumption of silver paste or substitute silver for other materials. As a proper candidate, copper has been researched by many institutes and companies since it has a similar conductivity with silver even though the price is inexpensive. To apply copper as a contact for solar cells, the plating technique has been actively researched. However, copper paste, which was mainly developed for integrated circuit applications, has been recently researched. Mostly, copper paste was developed for the low-temperature annealing process since copper tends to oxidize easily. On the other hand, firing type copper paste was also developed by coating copper particles with a barrier layer. This chapter discusses recent development of copper paste for the application of solar cells and its appropriate annealing conditions for better electrical properties. Also, the light I-V characteristics of copper paste on the solar cells in other research papers are summarized as well.
关键词： silicon heterojunction solar cells,curing,oxidation barrier coating,copper paste,passivated busbar
更新于2025-09-19 17:13:59
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Electronic Structure of In <sub/> 3– <i>x</i> </sub> Se <sub/>4</sub> Electron Transport Layer for Chalcogenide/p-Si Heterojunction Solar Cells
摘要： In this article, we perform density functional theory calculation to investigate the electronic and optical properties of newly reported In3?xSe4 compound using CAmbridge Serial Total Energy Package (CASTEP). Structural parameters obtained from the calculations agree well with the available experimental data, indicating their stability. In the band structure of In3?xSe4 (x = 0, 0.11, and, 0.22), the Fermi level (EF) crossed over several bands in the conduction bands, which is an indication of the n-type metal-like behavior of In3?xSe4 compounds. On the other hand, the band structure of In3?xSe4 (x = 1/3) exhibits semiconducting nature with a band gap of ～0.2 eV. A strong hybridization among Se 4s, Se 4p and In 5s, In 5p orbitals for In3Se4 and that between Se 4p and In 5p orbitals were seen for β-In2Se3 compound. The dispersion of In 5s, In 5p and Se 4s, Se 4p orbitals is responsible for the electrical conductivity of In3Se4 that is con?rmed from DOS calculations as well. Moreover, the bonding natures of In3?xSe4 materials have been discussed based on the electronic charge density map. Electron-like Fermi surface in In3Se4 ensures the single-band nature of the compound. The e?ciency of the In3?xSe4/p-Si heterojunction solar cells has been calculated by Solar Cell Capacitance Simulator (SCAPS)-1D software using experimental data of In3?xSe4 thin ?lms. The e?ect of various physical parameters on the photovoltaic performance of In3?xSe4/p-Si solar cells has been investigated to obtain the highest e?ciency of the solar cells. The optimized power conversion e?ciency of the solar cell is found to be 22.63% with VOC = 0.703 V, JSC = 38.53 mA/cm2, and FF = 83.48%. These entire theoretical predictions indicate the promising applications of In3?xSe4 two-dimensional compound to harness solar energy in near future.
关键词： electronic properties,density functional theory,optical properties,heterojunction solar cells,In3?xSe4
更新于2025-09-19 17:13:59
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Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells
摘要： Herein, the effectiveness of post-deposition catalytic-doping (cat-doping) on various doped silicon alloys, i.e., microcrystalline silicon (μc-Si:H), nanocrystalline silicon oxide (nc-SiOx:H), and microcrystalline silicon carbide (μc-SiC:H), for the use in silicon heterojunction solar cells is investigated. Phosphorous (P) pro?les by secondary ion mass spectrometry (SIMS) reveal the P distribution and its difference in these three silicon alloy ?lms. Conductivity and effective charge carrier lifetime of different samples are found to increase to different extents after cat-doping process. Coexistence of thermal annealing, hydrogenation, and phosphorus doping is con?rmed by using different gases during the cat-doping process.
关键词： silicon alloy,post-depositions,silicon heterojunction solar cells,hot-wire chemical vapor depositions,catalytic chemical vapor deposition
更新于2025-09-19 17:13:59
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Bifacial silicon heterojunction solar cells with advanced Ag-free multi-wire metallization attached to ITO layers using new transparent conductive PAEK copolymers
摘要： Previously, we reported the synthesis and application of transparent conductive polymer (TCP) films, poly(arylene ether ketone) copolymers (co-PAEKs), for forming direct contact between wires and transparent conductive oxide (TCO) layers in silicon solar cells. The polymers have the lowest peak strain temperature (Td), which determines the contact formation temperature, of 205 °C. To utilize such TCP films in silicon heterojunction (SHJ) solar cells with amorphous silicon layers, Td should be lowered. To solve the problem in question, a number of co-PAEKs with a decreased reduced viscosity (ηred) due to a decreased molecular weight of the polymer have been synthesized in this study. It has been shown that lowering ηred from 0.56 to 0.4 dl/g markedly improves the main properties of the co-PAEKs. In particular, (i) Td decreased from 205 to 189 °C, (ii) the peel strength, determined by pulling off the wires from the polymer surface, increased from 1.69 ± 0.26 to 3.55 ± 0.84 N/mm, and (iii) the resistivity of the wire/TCP/ITO (In2O3:Sn) contact, ρC, dropped from 1.20 to 0.67 mΩ cm2. At the same time, the optical properties of the copolymers remained unchanged. We have fabricated bifacial rear junction SHJ solar cells based on a ITO/(n)α-Si:H/(i)α-Si:H/(n)Cz-Si/(i)α-Si:H/(p)α-Si:H/ITO structure, with wire contact grids attached to the ITO layers using co-PAEK films. A solar cell produced using the co-PAEK film with the lowest reduced viscosity had an efficiency under front/rear illumination of 19.6%/18.4%. At 1-sun front illumination and 20/50% of 1-sun rear illumination, the equivalent efficiency is equal to 23.3%/28.8%.
关键词： Multi-wire metallization,Transparent conductive polymer,Silicon heterojunction solar cells
更新于2025-09-19 17:13:59
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Impact of pre-fabrication treatments on n-type UMG wafers for 21% efficient silicon heterojunction solar cells
摘要： Silicon heterojunction solar cells achieve high conversion efficiency due to the excellent surface passivation provided by the hydrogenated intrinsic amorphous silicon films. However, they require a high-quality wafer as a starting material because their low-temperature processing does not allow for gettering. Czochralski-grown upgraded metallurgical-grade (UMG-Cz) silicon is a low-cost alternative to electronic-grade silicon for silicon solar cells, but is often limited in lifetime by grown-in defects. We have previously shown that pre-fabrication treatments, namely tabula rasa, phosphorus diffusion gettering, and hydrogenation, can significantly improve the bulk quality of UMG-Cz wafers. These help to mitigate the impact of grown-in oxygen precipitate nuclei and metallic impurities. In this work, we fabricate rear-junction silicon heterojunction solar cells on both as-grown and pre-treated UMG-Cz and electronic-grade wafers. We show that pre-fabrication treatments have a marked impact on solar cell efficiencies. With pre-fabrication treatment, the efficiency improves from 18.0% to 21.2% for the UMG-Cz cells and 21.2%–22.7% for the electronic-grade cells. Comparison of the open-circuit voltages of the as-grown and pre-treated UMG-Cz and electronic-grade cells using Quokka simulations reveals that the bulk lifetime remains the primary limiting factor for the UMG-Cz wafers.
关键词： Hydrogenation,Phosphorus diffusion gettering,Czochralski silicon,Solar-grade silicon,Tabula rasa,Silicon heterojunction solar cells
更新于2025-09-16 10:30:52
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Optimization of SnO2-based electron-selective contacts for Si/PEDOT:PSS heterojunction solar cells
摘要： Tin oxide (SnO2) is a potentially excellent electron-selective contact (ESC) for silicon (Si)-based solar cells due to its satisfactory energy band structure and good crystallinity. However, unsatisfactory electron extraction ability and limited surface passivating effect of SnO2 ESCs will limit the performance of corresponding solar cells. We increase the Fermi level of SnO2 by doping Ethylene diamine tetraacetic acid (EDTA), which endows EDTA-SnO2 better electron extraction ability than SnO2. Moreover, EDTA-SnO2/SiOx bilayer ESC prepared by combining a EDTA-SnO2 layer and a thin silicon oxide (SiOx) film provides better surface passivation than EDTA-SnO2 ESC without impairing the charge transport capability markedly. The planar Si/PEDOT:PSS heterojunction solar cells (HSCs) with EDTA-SnO2/SiOx bilayer ESCs exhibit a power conversion efficiency (η) of 11.52%, which improves 13.7% in comparison with the η (10.13%) of HSCs with SnO2 ESCs, mainly caused by the increase in Voc and FF by 18 mV and 5.4% respectively.
关键词： Tin oxide,Electron-selective contact,Surface passivation,Silicon heterojunction solar cells,Fermi level
更新于2025-09-16 10:30:52
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Photovoltaic Properties of a Conjugated Copolymer Blending with Flame-Made ZnO Nanoparticles
摘要： The synthesis, characterizations, and photovoltaic studies of copolymer based on 4,4-dodecylpentaleno[1,2-b]dithiophene (PC12PDT) and 5-octyl-5H-thieno[3,4-c]pyrrole-4,6-dione (TPD) were described. The PC12PDTTPD copolymer achieved a high open circuit voltage (Voc) of ~ 0.8?0.9 V. Bulk-heterojunction (BHJ) solar cells were fabricated by using chlorobenzene with 1% chloronapthalene as the solvent additive. The ZnO nanoparticles, produced by flame spray pyrolysis (FSP), were dispersed in 1-butanol. After that, it was loaded into the devices along with [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) used as the electron acceptor. From the results, it was found that the ZnO nanoparticles with different amount had the effect on the power conversion efficiency (PCE) of the solar cells. The PCE obtained in this study (3.33%) was found in the 5.45 wt% ZnO loaded device. This was an improvement as compared to that of the standard device (2.45%).
关键词： PC12PDTTPD,ZnO,bulk heterojunction,solar cells,copolymer
更新于2025-09-16 10:30:52
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Through Concentration Profiling of Heterojunction Solar Cells
摘要： Electrochemical capacitance–voltage profiling has been used to examine heterojunction solar cells based on single-crystal silicon. Specific features of the electrochemical capacitance–voltage profiling of modern multilayer heterojunction solar cells have been analyzed. The distribution profiles of majority carriers across the whole thickness of the samples were obtained, including, for the first time, those in layers of conducting indium tin oxide.
关键词： electrochemical capacitance–voltage profiling,single-crystal silicon,amorphous silicon,heterojunction solar cells
更新于2025-09-16 10:30:52
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Photoluminescence of a-Si/c-Si Heterojunction Solar Cells with Different Intrinsic Thin Layers
摘要： The photoluminescence of two types of heterostructural silicon solar cells with di?erent passivation of crystalline silicon layer was studied. The contributions of various processes to the photoluminescence are revealed by measuring the photoluminescence at low temperatures. It is shown that the dopant concentration in crystalline silicon for solar cells based on an amorphous silicon/crystalline silicon heterojunction can be estimated from photoluminescence spectra. The correlation between the photoluminescence kinetics of heterostructural silicon solar cells and the photoconversion e?ciency is established. An e?ective method to determine the quality of surface doping in crystalline silicon solar cells based on an amorphous silicon/crystalline silicon heterojunction is proposed.
关键词： amorphous silicon/crystalline silicon heterojunction,solar cells,photoluminescence of solar cells
更新于2025-09-12 10:27:22
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Investigating the impact of thermal annealing on the photovoltaic performance of chemical bath deposited SnO2/p-Si heterojunction solar cells
摘要： The current work investigates the impact of annealing temperature on the optoelectronic properties of SnO2 thin films grown by chemical bath deposition (CBD) method. The as-grown SnO2 films, on p-Si substrate, are annealed at 200 °C and 400 °C for 10 min in Ar ambient for investigating the impact of such annealing on the performance of SnO2/p-Si heterojunction solar cells. The growth of a uniform SnO2 film on Si surface has been confirmed from SEM studies and the chemical composition and optical properties of the as-grown and annealed films are investigated in detail by employing XRD and ellipsometric measurements. Absorption coefficient of the samples is observed to vary in the range of 24 × 105 – 60 × 105/m, at its band gap (3.0 eV). The current–voltage characteristics under both dark and illuminated conditions suggest superior voltaic performance of the 200 °C annealed SnO2 film. The short-circuit current density, open-circuit voltage and fill-factor are obtained to be 0.45 mA/cm2, 5.41 mA/cm2 and 0.4 V, 0.34 V and 13%, 8% respectively for as-grown and 200 °C annealed samples. The maximum power conservation efficiency (η) of 4.9% is obtained for the 200 °C annealed sample. Thus, the study indicates the potential of CBD-grown SnO2 film for photovoltaic applications.
关键词： Optoelectronic properties,Heterojunction solar cells,Chemical bath deposition,Annealing temperature,SnO2 thin films
更新于2025-09-12 10:27:22