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Device simulation of Cu(In,Ga)Se2 solar cells by means of voltage dependent admittance spectroscopy
摘要： The simulation of solar cell devices is important for the understanding of defect physics and loss mechanisms in real solar cells. On the other hand, voltage dependent admittance spectroscopy delivers essential information for establishing a baseline simulation model of Cu(In,Ga)Se2 (CIGSe) solar cells. Here we give an explanation for the weak temperature dependence of the N1-signal, the latter being not compatible with a bulk defect or with a simple hole barrier at the Mo back contact. Furthermore, we find a Ed,IF – EV ≈ 0.3 eV deep recombination-active acceptor state at the absorber/buffer interface made of air-light exposed CIGSe absorbers. This gives us the ability to explain the reduction of power conversion efficiency of solar cells made from air-light exposed absorbers. From the voltage dependent capacitance step of this interface defect we can deduce the formerly unknown position of the Fermi level at the hetero junction in equilibrium which is close to mid-gap. Simulation of dark J-V curves allows a refinement of the parameter of this absorber/buffer interface defect, resulting in a defect density of Nd,IF ≈ 3.5·1011 cm-2 as well as capture cross sections of σn ≈ 4·10-16 cm2 for electrons and σp ≈ 3·10-11 cm2 for holes.
关键词： device simulation,Cu(In,Ga)Se2,admittance spectroscopy,defect physics,solar cells
更新于2025-11-14 17:28:48
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Assessment of Bulk and Interface Quality for Liquid Phase Crystallized Silicon on Glass
摘要： This paper reports on the electrical quality of liquid phase crystallized silicon (LPC-Si) on glass for thin-film solar cell applications. Spatially resolved methods such as light beam induced current (LBIC), microwave photoconductance decay (MWPCD) mapping, and electron backscatter diffraction were used to access the overall material quality, intra-grain quality, surface passivation, and grain boundary (GB) properties. LBIC line scans across GBs were fitted with a model to characterize the recombination behavior of GBs. According to MWPCD measurement, intra-grain bulk carrier lifetimes were estimated to be larger than 4.5 μs for n-type LPC-Si with a doping concentration in the order of 1016 cm?3. Low-angle GBs were found to be strongly recombination active and identified as highly defect-rich regions which spatially extend over a range of 40–60 μm and show a diffusion length of 0.4 μm. Based on absorber quality characterization, the influence of intra-grain quality, heterojunction interface, and GBs/dislocations on the cell performance were separately clarified based on two-dimensional (2-D)-device simulation and a diode model. High back surface recombination velocities of several 105 cm/s are needed to get the best match between simulated and measured open circuit voltage (Voc), indicating back surface passivation problem. The results showed that Voc losses are not only because of poor back surface passivation but also because of crystal defects such as GBs and dislocation.
关键词： Bulk lifetime,heterojunction,grain boundaries (GBs),two-dimensional (2-D)-device simulation,liquid phase crystallized silicon (LPC-Si),light beam induced current (LBIC)
更新于2025-11-14 15:25:21
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Indium Sealing of Metal Shell for Precision Devices Packaging
摘要： The indium seal quality of metal shell is crucial for avoiding the failure of precision devices. It is necessary to study the sealing process to increase the tightness of the cavity. The temperature field and deformation during the indium sealing process of metal shell are simulated, and by optimizing the sealing process parameters to assure the quality of the sealing joint. The simulation results show that sealing pieces with superior strength and tightness can be obtained when the temperature of the upper hot-press head is 130oC and 50oC for the lower heating block, and the sealing force is 1500N. An automatic shell sealing equipment was developed, which has the function of controlling the processing parameters, including temperature, force and displacement. A group of sealing parameters are set up for sealing the shell. The results of experiments show that the tightness of sealing pieces can meet the requirements.
关键词： shell sealing equipment,indium sealing,package of precision device,simulation
更新于2025-09-23 15:23:52
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Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs
摘要： The behavior of silicon carbide power MOSFETs is analyzed using TCAD device simulations with respect to conduction and switching losses. Device designs with varying breakdown voltages are simulated. The contributions to the on-state resistance are shown at room and elevated temperature. Whereas channel and substrate resistance dominate at low breakdown voltages, drift and JFET resistance dominate at high breakdown voltages. With increasing temperature, the channel resistance decreases and thus the drift resistance is the main contributor already at medium breakdown voltages. Manufacturing processes of a device can have a high influence on its losses. Variations in interface mobility, drift doping, and p-body doping can lead to a significant change of on-resistance, internal capacitances, and reverse recovery charge. For higher voltage classes the drift layer properties should be of major interest as it influences on-resistance and reverse recovery charge.
关键词： SiC power MOSFET,TCAD device simulation,sensitivity analysis,losses
更新于2025-09-23 15:23:52
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Parallel domain decomposition methods for a quantum-corrected drift–diffusion model for MOSFET devices
摘要： In this paper, we describe parallel domain decomposition methods based on the restricted additive Schwarz (RAS) method for a quantum-corrected drift-diffusion (QCDD) model for MOSFET devices. We have developed hybrid Message Passing Interface (MPI)/OpenMP parallelization algorithms of the QCDD system. For internode parallelization, two extensions of the RAS method are newly developed for the QCDD model. For intranode parallelization, we combine the conjugate gradient (CG) and BiCGSTAB procedures with a splitting-up operator method to realize parallelization of the incomplete factorization. The parallel numerical results for a three-dimensional Si bulk n-MOSFET on a multi-core NEC SX-ACE parallel computer are demonstrated. The intranode parallel numerical results are further evaluated on a many-core Cray XC40 parallel computer.
关键词： Restricted additive Schwarz method,Domain decomposition method,Numerical methods,Device simulation,Semiconductor,quantum-corrected drift–diffusion model
更新于2025-09-23 15:21:21
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Effect of front surface light trapping structures on the PERC solar cell
摘要： Properties of the front textured surface shape and anti-reflection coating have a great impact on the performance of solar cells. In this paper, the simulation model of the minimum unit cell structure is established and validated, which is based on the framework of Silvaco software and basic parameters of the standard pyramid textures single crystalline silicon PERC solar cell. The effect of the front surface light trapping structures on cell performance is discussed. It is found that the slightly concave pyramid-like textures can improve the response for short wavelengths and the short-circuit current density of the cell is increased by 0.3 mA/cm2, which is improved by 0.80%. In addition, by properly controlling the preparation process of the anti-reflection coating, a gradient-index SiOxNy/Si3N4 double-layer anti-reflection coating (DLARC) can be formed, which can significantly reduce the reflectivity for short wavelengths. And the short-circuit current density of the cell can be increased by 0.32 mA/cm2, which is improved by 0.86%. Finally, the optimized slightly concave pyramid-like textures and the SiOxNy/Si3N4 DLARC can improve the photoelectric conversion efficiency of the PERC solar cell by 0.18% and 0.20%, respectively.
关键词： Texturing,PERC solar cell,Light trapping,Device simulation,Anti-reflection coating
更新于2025-09-23 15:19:57
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Simulation and optimization of CH3NH3SnI3 based inverted perovskite solar cell with NiO as Hole transport material
摘要： A planar perovskite solar cell (PSC) with p-i-n inverted structure is modeled and simulated using SCAPS software to determine the power output characteristics under illumination. The inverted structure is NiO/CH3NH3SnI3/PCBM where NiO is the hole transport layer (HTL), CH3NH3SnI3 is the perovskite absorber layer and PCBM is the electron transport layer (ETL). Simulation efforts are focused on thickness of three layers, defect density of interfaces, density of states, and metal work function effect on power conversion ef?ciency (PCE) of solar cell. For optimum parameters of all three layers, ef?ciency of 22.95% has been achieved. From the simulations, an alternate lead free inverted perovskite solar cell is introduced.
关键词： Electron transport material,Transparent conducting oxide,Inverted perovskite solar cell,Hole transport material,Device simulation,Defect density
更新于2025-09-23 15:19:57
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Dipolar hole-blocking layers for inverted perovskite solar cells: effects of aggregation and electron transport levels
摘要： Herein, we report on the synthesis and investigation of two triazino-isoquinoline tetrafluoroborate electrolytes as hole-blocking layers in methylammonium triiodide perovskite photovoltaic devices with fullerene electron extraction layer. We find that increasing the thickness of the dipolar hole-blocking layer results in a gradual increase in the open-circuit voltage suggesting that aggregation of the molecules can enhance the dipole induced by the layer. This finding is confirmed by theoretical calculations demonstrating that while both molecules exhibit a similar dipole moment in their isolated state, this dipole is significantly enhanced when they aggregate. Ultra-violet photoemission spectroscopy measurements show that both derivatives exhibit a high ionization potential of 7 eV, in agreement with their effective hole-blocking nature demonstrated by the devices. However, each of the molecules shows a different electron affinity due to the increased conjugation of one of the derivatives. While the change in electron transport level between the two derivatives is as high as 0.3 eV, the difference in the open-circuit voltage of both types of devices is negligible, suggesting that the electron transport level plays only a minor role in determining the open-circuit voltage of the device. Numerical device simulations confirm that the increase in built-in potential, arising from the high dipole of the electrolyte layer, compensates for the non-ideal energetic alignment of the charge transport levels, resulting in high open-circuit voltages for a range of electron transport levels. Our study demonstrates that the application of small molecule electrolytes as hole-blocking layer in inverted architecture perovskite solar cells is a powerful tool to enhance the open-circuit voltage and provides useful guidelines for designing future generations of such compounds.
关键词： open-circuit voltage,small molecule electrolytes,aggregation,device simulation,perovskite solar cells
更新于2025-09-16 10:30:52
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Combining steady-state with frequency and time domain data to quantitatively analyze charge transport in organic light-emitting diodes
摘要： Typically, organic light-emitting diodes (OLEDs) are characterized only in steady-state to determine and optimize their efficiency. Adding further electro-optical measurement techniques in frequency and time domain helps to analyze charge carrier and exciton dynamics and provides deeper insights into the device physics. We, therefore, first present an overview of frequently used OLED measurement techniques and analytical models. A multilayer OLED with a sky-blue thermally activated delayed fluorescent dopant material is employed in this study without loss of generality. Combining the measurements with a full device simulation allows one to determine specific material parameters such as the charge carrier mobilities of all the layers. The main part of this tutorial focuses on how to systematically fit the measured OLED characteristics with microscopic device simulations based on a charge drift-diffusion and exciton migration model in 1D. Finally, we analyze the correlation and sensitivity of the determined material parameters and use the obtained device model to understand limitations of the specific OLED device.
关键词： charge transport,frequency domain,OLED,time domain,material parameters,device simulation
更新于2025-09-16 10:30:52
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[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Simulation of quantum dot based single-photon sources using the Schr?dinger-Poisson-Drift-Diffusion-Lindblad system
摘要： The device-scale simulation of electrically driven quantum light sources based on semiconductor quantum dots requires a combination of the (semi-)classical semiconductor device equations with cavity quantum electrodynamics. We present a comprehensive quantum-classical simulation approach that self-consistently couples the (semi-)classical drift-diffusion system to a Lindblad-type quantum master equation. This allows to describe the spatially resolved carrier transport in complex, multi-dimensional device geometries along with the fully quantum-mechanical light-matter interaction in the quantum dot-cavity system. The latter gives access to important quantum optical figures of merit, in particular the second-order correlation function of the emitted radiation. In order to account for the quantum confined Stark effect in the device’s internal electric field, the system is solved along with a Schr?dinger–Poisson problem, that describes the envelope wave functions and energy levels of the quantum dot carriers. The approach is demonstrated by numerical simulations of a single-photon emitting diode.
关键词： quantum-confined Stark effect,device simulation,Single-photon sources,quantum-classical coupling
更新于2025-09-12 10:27:22