- 标题
- 摘要
- 关键词
- 实验方案
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InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
摘要： III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selective epitaxy (TASE), which allows for the local integration of different III-V semiconductors on silicon. FinFETs with a gate length down to 20nm are fabricated based on a CMOS-compatible replacement-metal-gate process flow. This includes self-aligned source-drain n+ InGaAs regrown contacts as well as 4 nm source-drain spacers for gate-contacts isolation. The InGaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. Furthermore, we demonstrate a controlled InGaAs digital etching process to create doped extensions underneath the source-drain spacer regions. We report a device with gate length of 90 nm and fin width of 40 nm showing on-current of 100 μA/μm and subthreshold slope of about 85 mV/dec.
关键词： Integration,MOSFETs,TASE,III-V
更新于2025-09-23 15:22:29
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Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates
摘要： Monolithically integrated enhancement/depletion-mode (E/D-mode) GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) and inverters, were fabricated on an ultrathin-barrier (UTB) AlGaN/GaN heterostructure grown on Si substrates. By employing a graded AlGaN back barrier in the UTB-AlGaN/GaN heterostructure, a high threshold voltage (VTH) of +3.3 V is achieved in the E-mode MIS-HEMTs. The fabricated MIS-HEMT inverter features a high logic swing voltage of 7.76 V at a supply voltage of 8 V, a small VTH hysteresis as well as deviation less than 0.2 V. The UTB AlGaN/GaN-on-Si technology provides a good platform for integration of MIS-gate-based drivers and power transistors.
关键词： monolithic integration,ultrathin-barrier,GaN,E/D-mode,MIS-HEMT,inverter,AlGaN/GaN heterostructure,Si substrate
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - On the Transfer of Quantum-Optic Pair Sources Realized on SOI Photonics to Electronic Wafers
摘要： A micro-ring assisted photon-pair engine for CWDM and DWDM emission is implemented on silicon-on-insulator technology. Coincidences in pair emission show a 95% visibility for the photonic die. Just a small degradation is observed after wafer-level transfer to a BiCMOS electronics wafer in the 1550-nm region.
关键词： Photon pair source,3D Integration,Silicon photonics,Quantum optics
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE CPMT Symposium Japan (ICSJ) - Kyoto, Japan (2018.11.19-2018.11.21)] 2018 IEEE CPMT Symposium Japan (ICSJ) - 400G Multi-Mode and Single-Mode Optical Transmitter Realized by Hybrid-Integrated Silicon Interposer for Data Center Application
摘要： We experimentally demonstrated both 400G multi-mode (MM) and single-mode (SM) optical engines based on Silicon interposer to hybrid integrate laser dice, optics, and fiber arrays. The interposer realized by Silicon bulk micro-machining makes the engine very compact and easily assembled by the built-in Silicon precision. Clear optical eyes with TDECQ of 1.7dB and of 2.7 dB are obtained for 50Gb/s VCSEL in MM optical engine and 100Gb/s EML in SM one, respectively.
关键词： Optical Engine,Hybrid-Integration,VCSEL,Optical Sub-Assembly (OSA),and EML Laser,Silicon Interposer,Silicon Photonics
更新于2025-09-23 15:22:29
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Integrating Handcrafted and Deep Features for Optical Coherence Tomography Based Retinal Disease Classification
摘要： Deep Neural Networks (DNNs) have been widely applied to automatic analysis of medical images for disease diagnosis, and to help human experts by efficiently processing immense amounts of images. While handcrafted feature has been used for eye disease detection or classification since the 1990s, DNN was recently adopted in this area and showed very promising performance. Since handcrafted and deep feature can extract complementary information, we propose in this paper three different integration frameworks to combine handcrafted and deep feature for optical coherence tomography (OCT) image based eye disease classification. In addition, to integrate the handcrafted feature at Input and Fully Connection (FC) layers using existing networks like VGG, DenseNet and Xception, a novel ribcage network (RC Net) is also proposed for feature integration at middle layers. For RC Net, two “rib” channels are designed to independently process deep and handcrafted features, and another so called “spine” channel is designed for the integration. While dense blocks are the main components of the three channels, sum operation is proposed for the feature map integration. Our experimental results showed that the deep networks achieved better classification accuracy after integration of the handcrafted features e.g. SIFT and Gabor. The RC Net showed the best performance among all proposed feature integration methods.
关键词： feature integration,deep learning,Artificial intelligence,optical coherence tomography
更新于2025-09-23 15:22:29
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Through glass via technology for ultra-high Q factor inductors
摘要： Increasing demand for more advanced electronic products has driven semiconductor industry to develop more innovative and emerging advanced packaging technologies. Integrated Passive Devices have been proved to be an effective solution for fabricating products with better performance. In order to form higher Q factor inductors, the 3D integration inductors are designed and fabricated based on through glass via (TGV) method. Effect of substrate material and structure of 3D integration inductors was investigated by the simulation of HFSS and the test result. The results show that the ultra-high Q factor 3D integration inductors can be achieved by choosing glass substrate as long as selecting through glass via method. 3D integration inductors were achieved by reducing losses caused by MOS parasitic capacitor in the 3D integration inductors.
关键词： TGV,inductors,IPD,3D integration,Q factor
更新于2025-09-23 15:22:29
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A Hybrid MMC-Based Photovoltaic and Battery Energy Storage System
摘要： This paper proposes a new configuration and its control strategy for a modular multilevel converter (MMC)-based photovoltaic (PV)-battery energy storage (BES) system. In the MMC-based PV-BES system, each PV submodule is interfaced from its dc side with multiple PV generators using isolated dual active bridge (DAB) dc-dc converters. One BES system is embedded into each arm of the converter and is connected to the dc port of the associated BES submodule using multiple isolated DAB converters. The embedded BES systems are used to smooth the output power of the PV generators and limit the rate of change of the power delivered to the host grid. Moreover, they enable compensation of power mismatches between the arms and legs of the system by exchanging power with the arms of the converter. The paper then proposes a hybrid power mismatch elimination strategy using a combination of power exchange with the arms of the converter and internal power flow control of the MMC. The proposed hybrid power mismatch elimination strategy employs BES systems and differential currents to compensate power mismatches and transfer power between the arms and legs of the converter, respectively. The effectiveness of the proposed power smoothing technique using the embedded BES systems and hybrid power mismatch elimination strategy is demonstrated using time-domain simulations conducted on a switched model of the PV-BES system in PSCAD/EMTDC software environment.
关键词： control,modular multilevel converter,power electronics,battery energy storage,photovoltaic,power mismatch,Differential current,energy conversion,integration
更新于2025-09-23 15:22:29
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Flip-Chip Integration of InP and SiN
摘要： We present an interface for hybrid flip-chip integration of InP based laser sources to silicon nitride based photonic platforms. The design enables efficient high optical power coupling over a wide temperature range. The optical modes of laser and SiN chip are expanded using integrated tapers allowing for high alignment tolerance. The chips comprise physical alignment stops for vertical alignment. In the horizontal direction, the integration interface is optimized for active and/or visual alignment with high precision using precise visual alignment marks. The hybrid integrated chip shows a waveguide coupled optical power of more than 40mW and can operate at elevated temperatures up to 85°C.
关键词： silicon photonics,silicon nitride,flip-chip,laser,hybrid integration
更新于2025-09-23 15:22:29
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[ASME ASME 2018 International Mechanical Engineering Congress and Exposition - Pittsburgh, Pennsylvania, USA (Friday 9 November 2018)] Volume 6A: Energy - Retrofitting Gas Turbine Units Parabolic Trough Concentrated Solar Power for Sustainable Electricity Generation
摘要： Shams1 is hybrid solar/natural-gas concentrated solar power (CSP) plants. The plant is also integrated with a booster gas-fired-heaters for steam superheating. In addition to direct fire-heaters to the heat transfer fluid (HTF) for supplying thermal energy during the night or whenever the solar irradiance level is dimmed. However, there is a more sustainable way to avoid power-generation-outages transient weather conditions without a significant plant reconstruction, i.e. integration with gas turbines. In this study, a thermodynamic model of Shams1 integration with gas turbines is developed to investigate the gas turbine capacity and the exergitic efficiency of the supplied gas with and without the gas turbine involvement. The HTF heaters will receive the needed thermal energy from the gas turbines exhaust gases instead of the direct fire-heater (case1). Another potential is replacing the booster fire heaters with the gas turbine system as well. (case2). A parametric study is conducted to determine the size and the requirements of a gas turbine system for the specified power target demand in addition to a feasibility study for the proposed system. The results showed that using two gas turbines for the HTF heater significantly improved the overall efficiency and reduces the CO2 emission. Replacing the booster heater with two gas turbines improves the efficiency up to excess air factor of 2.5.
关键词： CSP,Topping and Bottoming Cycles,CSP/Gas Integration,Concentrated Solar Power
更新于2025-09-23 15:22:29
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Performance Optimization for In-Vehicle Displays
摘要： As the number and size of displays in cars continue to increase, harmonizing those displays across different applications and technologies within interior surfaces is a key task for system integrators. High-performance displays in vehicles require adjustments for specific design and performance needs. This article covers aspects of premium system design that involve optimization of white-point adjustment, color, and black uniformity for single and multiple display applications.
关键词： black uniformity,in-vehicle displays,automotive displays,white-point adjustment,system integration,color adjustment
更新于2025-09-23 15:22:29