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- 实验方案
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SYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS
摘要： In this work, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol–gel technique to synthesize the photodevice. The transparent metal oxide La-doped ZnO thin films were grown on glass and p-Si substrates using spin coating technique. Optical, surface morphology and electrical characterization of the fabricated Al/p-Si/La:ZnO/Al devices have been performed using I–V and C/G–V characteristics under dark and different illumination conditions. Herein, from I–V characteristics, the crucial electronic parameters such as barrier height, ideality factor and series resistance were investigated. The photodevice transient photocurrent increases with the increase of illumination intensity. The current ratios of Ion/Ioff were calculated for the fabricated devices. Among the devices, the highest photoresponse was found to be about 2186 for the Al/p-Si/La(0.5 wt.%):ZnO/Al structure. The Rs–V behavior of fabricated device confirms the presence of interface states. The obtained results and photoresponse behaviors suggested that Al/p-Si/La:ZnO/Al devices can enhance the applications in optoelectronic devices such as photodetectors.
关键词： sol–gel,photoresponse,photodetector,doped ZnO,Electrical characteristics
更新于2025-09-16 10:30:52
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Review on Quasi One-Dimensional CdSe Nanomaterials: Synthesis and Application in Photodetectors
摘要： During the past 15 years, quasi one-dimensional (1D) Cadmium Selenide (CdSe) nanomaterials have been widely investigated for high-performance electronic and optoelectronic devices, due to the unique geometrical and physical properties. In this review, recent advancements on diverse synthesis methods of 1D CdSe nanomaterials and the application in photodetectors have been illustrated in detail. First, several bottom-up synthesis methods of 1D CdSe nanomaterials have been introduced, including the vapor-liquid-solid method, the solution-liquid-solid method, and electrochemical deposition, etc. Second, the discussion on photodetectors based on 1D CdSe nanomaterials has been divided into three parts, including photodiodes, photoconductors, and phototransistors. Besides, some new mechanisms (such as enhancement effect of localized surface plasmon, optical quenching effect of photoconductivity, and piezo-phototronic effect), which can be utilized to enhance the performance of photodetectors, have also been elaborated. Finally, some major challenges and opportunities towards the practical integration and application of 1D CdSe nanomaterials in photodetectors have been discussed, which need to be further investigated in the future.
关键词： synthesis,photodetector,quasi one-dimensional nanomaterials,CdSe
更新于2025-09-16 10:30:52
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From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors
摘要： Porous GaN has many unique merits, such as a large specific surface area, adjustable bandgap and excellent optical performance. Here, we develop a simple and effective method for preparing porous GaN single crystals through high temperature annealing. The effects of different annealing temperatures on the porous structure, crystal quality and optical properties of GaN are investigated. The relationship model of annealing temperatures, times and GaN porous structures is summarized. An ultraviolet (UV) photodetector based on porous GaN is fabricated. The effects of porous structures on the performance of the GaN UV photodetector are investigated for the first time. We found that the appropriate GaN porous structure can improve the performance of the photodetector. A possible performance enhancement mechanism has been proposed. Based on the high performance and simple fabrication process, porous GaN crystal can be an excellent candidate for UV photodetectors.
关键词： optical properties,crystal quality,UV photodetector,high temperature annealing,porous GaN
更新于2025-09-16 10:30:52
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Polarization Diverse Photodetector Chip Based on Waveguide Integrated MQW and Bulk Photodiodes
摘要： A photodetector chip for polarization diverse detection is presented. Serially connected MQW and bulk photodiodes detect TE and TM light separately with responsivities of 0.65 A/W and 0.45 A/W, respectively. Detection of 2x25 GBaud for dual polarization signals with a BER of 10-6 is demonstrated.
关键词： Photodetector,MQW,Diverse,Polarization,Multi-Quantum-Well
更新于2025-09-16 10:30:52
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Silicon/2D-materials Photonic Integrated Devices
摘要： Silicon photonics has attracted much attention because of the CMOS compatibility, high integrated density, etc. However, silicon is not a good option for active photonic integrated devices due to its indirect-bandgap structure. Recently, two-dimensional (2D) materials, such as graphene and black phosphorus (BP), exhibit excellent optical and electronic properties, and thus provide a potential option for realizing active photonic integrated devices on silicon. In this paper, we present our recent works on silicon/2D-materials photonic integrated devices for photodetection and thermal-tuning.
关键词： thermal optic,silicon photonics,photodetector,2D materials
更新于2025-09-16 10:30:52
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[IEEE TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON) - Kochi, India (2019.10.17-2019.10.20)] TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON) - An Alternative Approach to Voltage Dependent Reduction of Schottky Barrier Height Modeling in Two Dimensional MSM Photodetectors
摘要： Current-voltage (I-V) characteristics of a two dimensional MSM photodetector can be explained by modified thermionic emission diffusion (TED) theory. The theory assumes that Schottky barrier height (SBH) decreases linearly with bias voltage and hence voltage dependent reduction of SBH is understood in term of a series resistance (Rs) and ideality factor (n). Characterization of Rs and n can be done from dV d(lnI) vs I plot. However, in this paper we are presenting an alternative approach to understanding characteristics of voltage dependent reduction of SBH. We are proposing an exponential relationship between reduction of SBH and bias voltage to understand non ideality of Schottky junctions. By applying this relationship directly into the Richardson-Dushman equation photocurrents of different Transition-Metal Dichalcogenides(TMD) based devices can be estimated analytically. This model offers a simplistic approach for understanding non ideal behaviour of Schottky barrier height. Using this model we have calculated I-V characteristics of four different TMD based photodetectors under illumination as reported in literature. We have observed good agreement of our calculated results with experimental values. Mean absolute error in each of the cases was found to be not more than 6% in these calculations.
关键词： Perovskite,Voltage Dependent Schottky Barrier Height,Transition-Metal Dichalcogenide,Photodetector
更新于2025-09-16 10:30:52
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Enhanced photoresponse in ZnO nanorod array/p-GaN self-powered ultraviolet photodetectors via coupling with CuO nanostructures
摘要： ZnO nanorod arrays (ZnO NRAs) coupled with coral-like CuO nanostructures (CuO CLNs) were prepared by low-temperature hydrothermal method. Self-powered ultraviolet (UV) photodetectors (PDs) based on ZnO NRAs/CuO CLNs/p-GaN heterostructure were fabricated via a direct-contact method. Under UV illumination (1.46 mW cm?2), the ratios of photocurrent to dark current (Iphoto/Idark), photo-responsivity and speci?c detectivity for the ZnO NRAs/CuO CLNs/p-GaN heterojunction self-powered PD were estimated to be 1143, 1.44 mA W?1 and 5.9×1010 cm Hz1/2/W at 0 V, which were about ～187, ～104 and ～153 times greater than those of the ZnO NRAs/p-GaN self-powered PD, respectively. Moreover, the PD displayed faster response time, excellent stability and repeatability by coupling with CuO CLNs. The mechanism of the enhanced photoresponse performance was discussed through the energy band diagram.
关键词： self-powered,CuO nanostructures,ultraviolet photodetector,ZnO nanorods
更新于2025-09-16 10:30:52
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Vis–IR wide-spectrum photodetector at room temperature based on p-n junction-type GaAs1-xSbx/InAs core-shell nanowire
摘要： Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here, we report a new kind of photodetector based on p?n heterojunction-type GaAs1-xSbx/InAs core-shell nanowires. The photodetectors demonstrate high response to the lights ranging from visible light (488 nm) to short-wavelength IR (1800 nm) at room temperature under a very low bias voltage of 0.3 V. The high performances of the devices include an ultralow dark current (32 pA at room temperature), a fast response speed (0.45 ms) to 633 nm light, high responsivity to 1310 nm telecommunication light (0.12 A/W), and high response even to 1800 nm light (on/off ratio of 2.5), etc. Besides, the devices also show excellent rectifying I-V characteristics (the current rectification ratio being ~178 in a voltage range of ± 0.3 V). These results suggest that the GaAs1-xSbx/InAs core-shell nanowires devices are promising for applications in nanoelectronic devices, optoelectronic devices and integrated optoelectronic devices.
关键词： P-N junction,IR,III-V nanowires,core-shell nanowires,Photodetector
更新于2025-09-16 10:30:52
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2D alloying molybdenum tin-disulfide monolayers with fast photoresponse
摘要： Elemental alloying in monolayer, two-dimensional (2D) transition metal dichalcogenides (TMDs) promises unprecedented ability to modulate their electronic structure leading to the unique optoelectronic properties. MoS2 monolayer based photodetectors typically exhibit a high photoresponsivity but suffer from a low response time. Here we develop a new approach for Sn alloying in MoS2 monolayers based on the synergy of the customized chemical vapor deposition (CVD) and the effects of common salt (NaCl) to produce high-quality and large-size Mo1-xSnxS2 (x<0.5) alloy monolayers. The composition difference results in different growth behaviors; Mo dominated alloys (x<0.5) exhibit uniform and large size (up to 100 μm) triangular monolayers, while Sn dominated alloys (x>0.5) present multilayer grains. The Mo1-xSnxS2 (x<0.5) based photodetectors and phototransistors exhibit a maximum responsitivity of 12 mA/W and a minimum response time of 20 ms, which is faster than most reported MoS2 based photodetectors. This work offers new perspectives for precision 2D alloy engineering to improve the optoelectronic performance of TMD-based photodetectors.
关键词： photodetector,Mo1-xSnxS2 monolayer,chemical vapor depostion,NaCl,response time
更新于2025-09-16 10:30:52
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[IEEE 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Sao Paulo, Brazil (2019.8.26-2019.8.30)] 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Dual Color Asymmetric Superlattice Infrared Photodetector
摘要： We have developed a new dual color infrared photodetector based on an asymmetric multiple quantum well superlattice. Theoretical simulations on the asymmetric superlattices show that two different absorption energies will contribute to the current in opposite directions. Absorption measurements on grown structures are compared with theoretical absorption spectra and a good agreement is obtained.
关键词： intersubband transition,quantum well,superlattice,Photodetector,dual color detector
更新于2025-09-16 10:30:52