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oe1(光电查) - 科学论文

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  • High performance broadband photodetectors based on Sb2Te3/n-Si heterostructure

    摘要： With the rapid development of optoelectronic devices, photodetectors have triggered an unprecedented promising in the field of optical communication, environmental monitoring, biological imaging, chemical sensing. At the same time, there is a higher requirement for photodetectors. It is still a huge challenge for photodetectors that possess excellent performance, low cost and broad range photoresponse from ultraviolet to infrared. In this work, a facile, low cost growth of Sb2Te3 thin film using magnetic sputtering was performed. After rapid annealing treatment, the crystallinity of the thin film was transformed from amorphous to polycrystalline. Ultraviolet-visible-infrared absorption study of the thin film revealed broad absorption range, which is ideal for use in broadband photodetectors. Such photodetectors can find many important applications in communication, data security, environmental monitoring and defense technology etc. A prototype photodetector, consisting of Sb2Te3/n-Si heterostructure, was produced and characterized. The device demonstrated a significant photoelectric response at a broad spectral range of between 250 and 2400 nm. The maximum responsivity and detectivity of the device were 270 A/W and 1.28×1013 Jones, respectively, under 2400 nm illumination. Therefore, the results showed the potential use of Sb2Te3 thin film in developing high performance broadband photodetectors.

    关键词： photodetector,Sb2Te3,broadband

    更新于2025-09-23 15:21:01

  • AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy

    摘要： A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.

    关键词： nBn detector,molecular-beam epitaxy,dark current,InSb,IR photodetector

    更新于2025-09-23 15:21:01

  • [IEEE 2019 International Workshop on Fiber Optics in Access Networks (FOAN) - Sarajevo, Bosnia and Herzegovina (2019.9.2-2019.9.4)] 2019 International Workshop on Fiber Optics in Access Networks (FOAN) - An Affordable Laboratory Photodiode up to 11.5 GHz for Microwave Photonics Experiments

    摘要： Low-cost optoelectronic devices are the main limiting factor when it comes to scaling the current access networks based on microwave photonics to the capabilities of smart cities. The use of affordable photodiodes could decrease the use of microwave photonics, since it is part of each system. In this paper we evaluate the frequency response of a coaxial packaged photodiode. The design of an electric circuit is presented. The results from the vector network analyzer show that the coaxial packaged photodiode makes photodetectors applicable up to 11.5 GHz. In addition, an experimental verification of the photodiode in an optoelectronic oscillator is performed.

    关键词： photodetector,optoelectronic oscillator,photodiode,microwave photonics

    更新于2025-09-23 15:21:01

  • Single-photon limit of dispersive readout of a qubit with a photodetector

    摘要： We study the dispersive readout of a qubit in the ultimate limit of a single-photon probe. The use of a single-photon probe avoids the errors due to nonorthogonality of coherent states. A photodetector is used in the scheme we consider. The dynamics of the system is studied using the Heisenberg-Langevin equations. We treat the counter-rotating terms in the Hamiltonian perturbatively, which leads to the Bloch-Siegert shift in the resonator frequency. It is shown how the shift can improve the readout. The theory of photon transport through the qubit and the resonator it couples to is provided while taking the effect of the counter-rotating terms into account. To calculate the readout contrast, we use two approaches. The first one neglects the qubit relaxation and allows us to derive a compact expression for the contrast. Also, we obtain simple estimates for the system parameters to maximize the contrast. The second approach accounts for the qubit relaxation, which allows us to further improve the contrast. We demonstrate that for a readout time of 1 μs, a contrast of more than 75% can be achieved for an ideal detector and single-photon source.

    关键词： Heisenberg-Langevin equations,qubit,dispersive readout,photon transport,Bloch-Siegert shift,readout contrast,photodetector,single-photon probe

    更新于2025-09-23 15:21:01

  • 2D-SnS$_2$ Nanoflakes Based Efficient Ultraviolet Photodetector

    摘要： This paper reports a SnS2 nanoflakes based UV photodetector having high sensitivity and thermal stability upto 120 ?C. Simple and low cost solvothermal technique has been used to synthesize SnS2 nanoflakes of close to hexagonal shapes. A simple photoconductor structure on SiO2/Si substrate is fabricated by using Ag as contact material. The resultant device has good sensitivity (～400), responsivity (～5.5 A/W), EQE (～1868%), detectivity (～1.72 × 1013 Jones) and low response time (～2.2 s). The reported characteristics are superior to many other UV photodetectors utilizing complex hybrid structure of the device, either in form of additional filter layer or nanostructural light sensitive material.

    关键词： photoconductor,UV photodetector,SnS2 nanoflakes,2-D material

    更新于2025-09-23 15:21:01

  • P-type laser-doped WSe <sub/>2</sub> /MoTe <sub/>2</sub> van der Waals heterostructure photodetector

    摘要： Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials are being studied extensively for their prospective applications in photodetectors. As the pristine WSe2/MoTe2 heterostructure is a type I (straddling gap) structure, it cannot be used as a photovoltaic device theoretically, although both WSe2 and MoTe2 have excellent photoelectric properties. The Fermi level of p-doped WSe2 is close to its valence band. The p-doped WSe2/MoTe2 heterostructure can perform as a photovoltaic device because a built-in electric field appears at the interface between MoTe2 and p-doped WSe2. Here, a 633 nm laser was used for scanning the surface of WSe2 in order to obtain the p-doped WSe2. X-ray photoelectron spectroscopy (XPS) and electrical measurements verified that p-type doping in WSe2 is produced through laser treatment. The p-type doping in WSe2 includes substoichiometric WOx and nonstoichiometric WSex. A photovoltaic device using p-doped WSe2 and MoTe2 was successfully fabricated. The band structure, light-matter reactions, and carrier-transport in the p-doped WSe2/MoTe2 heterojunction were analyzed. The results showed that this photodetector has an on/off ratio of ≈104, dark current of ≈1 pA, and response time of 72 μs under the illumination of 633 nm laser at zero bias (Vds = 0 V). The proposed p-doping method may provide a new approach to improve the performance of nanoscale optoelectronic devices.

    关键词： molybdenum ditelluride,heterojunction,tungsten selenide,photodetector,p-doped

    更新于2025-09-23 15:21:01

  • High Responsivity Visible Blind Pd/Al2O3/MoS2/ITO MISM UV Photodetector

    摘要： In the present paper, Pd/Al2O3/MoS2/ITO MISM UV photodetector structure is proposed and analyzed. For the proposed photodetector, responsivity is 488 A/W, detectivity is 8.22×1013Jones and external quantum efficiency (EQE) is 1.9×105%, at wavelength 308nm, 1V bias and light intensity 13.6μW/cm2. Thus, proposed MISM photodetector device gives significant performance improvement over other UV photodetectors.

    关键词： Molybdenum di-sulphide (MoS2),Responsivity,Photodetector,X-ray diffraction (XRD)

    更新于2025-09-23 15:21:01

  • Vein detection with near-infrared organic photodetectors for biometric authentication

    摘要： We combine a low dark current and high-detectivity near-infrared (NIR)-sensitive organic photodetector with a high-resolution 508 pixels per inch (ppi) oxide thin-film transistor (TFT) backplane to create a large-area thin NIR detector, using processes that are compatible with flat-panel display fabrication. The detector is characterized showing high uniformity and linearity. With the use of a NIR light source, the detector is capable of imaging the (pattern of) veins under the skin in reflection, leading to improved biometric authentication.

    关键词： near-infrared organic photodiodes,vein detection,biometric authentication,large-area photodetector arrays

    更新于2025-09-23 15:21:01

  • Printed Higha??Density and Flexible Photodetector Arrays via Sizea??matched Heterogeneous Microa??/Nanostructure

    摘要： Semiconductor/metal binary systems constitute the core components in electronic/photonic devices. The domain size of the heterostructure should be comparable to the charge diffusion length for superior photoelectric response. However, the fabrication of size-matched heterostructures is still a challenge, especially for printed devices. Here, a high-density photodetector array with lateral semiconductor/metal heterostructure is achieved via the template-assisted sequentially printing strategy. The Ag/PBDB-T:ITIC/Ag based lateral heterojunction that matches the charge diffusion length in the charge transfer process provides high light response sensitivity (D* = 3.41 × 1012 Jones, R = 12.9 A W?1). Moreover, the printed pixel interval can be decreased to 10 μm (106 pixels cm?2; resolution: 2.5 × 103 dpi). As the printing strategy can be implemented on soft substrates, the photodetector arrays are endowed with the flexibility. This work demonstrates a simple and effective strategy for chip-scale fabrication of flexible high-performance photodetectors, which validates the potential of printed heterogeneous micro-/nanostructures for integrated active electronics and optics.

    关键词： flexible photodetector arrays,light imaging,sequential printing,heterostructures

    更新于2025-09-23 15:21:01

  • High-Performance Enhancement of a GaAs Photodetector Using a Plasmonic Grating

    摘要： In this study, we present and establish a gold surface plasmon polariton (SPP) GaAs photodetector that achieves high internal quantum efficiency (IQE). At a wavelength of 600 nm, the IQE with the SPP was 85%, while the IQE without the SPP was 42%, an enhancement of 43%. Also, at a wavelength of 675 nm, the IQE with SPP was 82%, whereas the IQE without SPP was 45%, which constitutes an increase of 37%. Such excellent performance is ascribed to the subwavelength scope of the optical power in the photoconductive-based gold SPP GaAs that provides high IQE. Moreover, the recombination of the SPP in the photodetector provides greater photocurrent and responsivity.

    关键词： Surface plasmon polaritons,GaAs photodetector,Plasmonic photodetectors,Light trapping,Plasmonic grating

    更新于2025-09-23 15:21:01