- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
P-1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back-channel-etched a-IGZO TFTs
摘要： The back-channel-etched (BCE) amorphous InGaZnO thin-film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self-heating effect can be used to account for this anomalous dependence of VTH on W and VD.
关键词： self-heating effect,drain voltage,threshold voltage,amorphous InGaZnO TFTs,channel width
更新于2025-09-23 15:23:52
-
[IEEE 2018 IEEE International Ultrasonics Symposium (IUS) - Kobe, Japan (2018.10.22-2018.10.25)] 2018 IEEE International Ultrasonics Symposium (IUS) - A Hybrid 3D Thermal / 1D Piezoelectric Finite Element Model for Rapid Simulation of FBAR Filter Response Under High Power
摘要： The increasingly stringent power requirements imposed on BAW filter technologies has made coupling between thermal and piezoelectric physics relevant to the design process. Existing lumped filter models do not account for the effect of a 3D temperature distribution over each resonator. Here we report a new finite element based method for rapid simulation of filter response under high power that captures the effect of heat flow within the filter die as well as its path through the PCB to thermal ground.
关键词： thermo-piezoelectric,BAW,self-heating,nonlinear,FBAR,FEM,fully coupled
更新于2025-09-23 15:22:29
-
Assessment of Self-Heating Effects Under Lateral Scaling of GaN HEMTs
摘要： The impact on self-heating mechanisms observed in GaN HEMTs fabricated on Si substrates is studied by means of a cellular Monte Carlo particle-based device simulator. Within this framework, the thermal effects are included through an energy-balance equation for phonons allowing for self-consistently coupling the charge and heat transport. First, the advanced electrothermal model of an experimental device is developed and calibrated to measured dc characteristics, showing an accurate description throughout the IDS(VGS?VDS) space, as a result of capturing the temperature dependence of the scattering processes that modify the charge transport. Then, the model is used to assess the effect of lateral scaling, i.e., reducing the source-to-gate LSG and gate-to-drain LGD dimensions, in terms of detailed temperature maps obtained for the acoustic and optical phonon modes as well as the electric field and carrier velocity profiles. It is found that the hot spot in the channel is not located at the peak electric field as predicted by previous methods, but instead, it is shifted toward the drain up to 32 nm. Furthermore, it is shown that, while scaled devices offer improved dc and small-signal ac performance, they are subjected to temperatures up to 15% higher in the channel as compared to the original nonscaled device when dissipating the same dc power, and the temperature distribution throughout the device shows a strong correlation with the scaled layout.
关键词： reliability,HEMTs,Monte Carlo methods,self-heating,scaling,GaN
更新于2025-09-23 15:22:29
-
[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Improved Multiscale Model of Heat Exchange at the Apex of Carbon Nanotube Fiber Cathodes
摘要： A multiscale model of field emission (FE) from carbon nanotube fibers (CNFs) is developed which includes a detailed treatment of the heat exchange mechanisms in the array of carbon nanotubes (CNTs) located at the tip of the fiber. The model takes into account Joule heating within the fiber, radiative cooling at the fiber apex, and the transition from Nottingham heating to Henderson cooling in the CNTs in the array at the apex of the fiber as the external electric field is increased. The model uses numerical calculations of the current emitted from each CNT and the energy exchange at their tips. The model predicts the fraction of CNTs being destroyed as a function of the applied external electric field. For the surviving CNTs, the model also predicts the fraction of CNTs either undergoing Henderson cooling or Nottingham heating for both the up and down sweeps of the applied external electrical field. This investigation sheds new light on the FE properties on CNFs.
关键词： carbon nanotube fibers,Multiscale Model,field emission,Henderson cooling,self-heating effects,Nottingham heating
更新于2025-09-23 15:21:21
-
Apparent self-heating of individual upconverting nanoparticle thermometers
摘要： Individual luminescent nanoparticles enable thermometry with sub-diffraction limited spatial resolution, but potential self-heating effects from high single-particle excitation intensities remain largely uninvestigated because thermal models predict negligible self-heating. Here, we report that the common “ratiometric” thermometry signal of individual NaYF4:Yb3+,Er3+ nanoparticles unexpectedly increases with excitation intensity, implying a temperature rise over 50 K if interpreted as thermal. Luminescence lifetime thermometry, which we demonstrate for the first time using individual NaYF4:Yb3+,Er3+ nanoparticles, indicates a similar temperature rise. To resolve this apparent contradiction between model and experiment, we systematically vary the nanoparticle’s thermal environment: the substrate thermal conductivity, nanoparticle-substrate contact resistance, and nanoparticle size. The apparent self-heating remains unchanged, demonstrating that this effect is an artifact, not a real temperature rise. Using rate equation modeling, we show that this artifact results from increased radiative and non-radiative relaxation from higher-lying Er3+ energy levels. This study has important implications for single-particle thermometry.
关键词： upconverting nanoparticles,NaYF4:Yb3+,Er3+,thermometry,luminescence,self-heating
更新于2025-09-23 15:21:21
-
Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation
摘要： In this paper, the main content revolves round the on-state characteristics of the variation of a lateral width (VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific on-resistance of the VLW LDMOS device, the simulation results are in good agreement with the analytical calculation results combined with device dimensions. This provides a theoretical basis for the design of devices in the future. Then the self-heating effect of the VLW structure with a silicon-on-oxide (SOI) substrate is compared with that of a silicon carbide (SiC) substrate by 3D thermoelectric simulation. The electrical characteristic and temperature distribution indicate that taking into account the SiC as the substrate can mitigate the self- heating penalty effectively, alleviating the self heating effect and improving reliability.
关键词： self-heating effect,specific on-resistance,SOI,LDMOS transistor
更新于2025-09-23 15:21:01
-
Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices
摘要： A simple electrical method to extract device channel thermal resistance in transistors is presented here. The method compares the dc to discrete-pulsed characteristics and estimates the effective increase in channel temperature under dc biasing conditions. Using the discrete-pulsed I versus t method, the self-heating of the device is effectively eliminated, which helps avoiding the underestimation of the device channel thermal resistance, therefore, making it possible to perform thermal measurements at the high power operation. This technique was applied to lateral GaN HEMTs with three different substrates as well as vertical GaN current aperture vertical electron transistor (CAVET) on sapphire, which proved its sensitivity and validity for different device structures and geometries.
关键词： high-electron mobility transistors (HEMTs),self-heating,current aperture vertical electron transistor (CAVET),Channel thermal resistance
更新于2025-09-23 15:21:01
-
Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study
摘要： In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify the heat flow across the device structure, a thermal conductivity model and the heat transfer properties corresponding to the GaN, SiC, and Cu materials were applied. Initially, we simulated the direct current (DC) characteristics of a basic GaN on SiC HEMT to confirm the self-heating effect on AlGaN/GaN HEMT. Then, to verify the heat sink effect of the copper-filled thermal structures, we compared the DC characteristics such as the threshold voltage, transconductance, saturation current, and breakdown voltage. Finally, we estimated and compared the lattice temperature of a two-dimensional electron gas channel, the vertical lattice temperature near the drain-side gate head edge, and the transient thermal analysis for the copper-filled thermal trench and via structures. Through this study, we could optimize the operational characteristics of the device by applying an effective heat dissipation structure to the AlGaN/GaN HEMT.
关键词： thermal conductivity,high electron mobility transistor,GaN,self-heating effect,copper-filled structure
更新于2025-09-16 10:30:52
-
Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure
摘要： Self-heating effect is a major limitation in achieving the full performance potential of high power GaN power devices. In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. From the current-voltage characteristics, the saturation drain current was improved by approximately 17% with the copper filled micro-trench structure due to efficient heat dissipation. The iDS difference between the pulse and DC bias measurement was about 21% at high bias VDS due to the self-heating effect. In contrast, the difference was reduced to approximately 8% for the devices with the implementation of the proposed structure. Using Micro-Raman thermometry, we showed that temperature near the drain edge of the channel can be lowered by approximately ~22 °C in a HEMT operating at ~10.6 Wmm?1 after the implementation of the trench structure. An effective method for the improvement of thermal management to enhance the performance of GaN-on-Silicon HEMTs was demonstrated.
关键词： thermal management,high electron mobility transistor,self-heating effect,copper filled micro-trench,GaN-on-Si
更新于2025-09-16 10:30:52
-
[IEEE 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Udine, Italy (2019.9.4-2019.9.6)] 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Impact of BEOL Design on Self-heating and Reliability in Highly-scaled FinFETs
摘要： This paper investigates the impact of BEOL design on device and backend reliability – HCI, BTI, EM – due to dependence of self-heating on BEOL in highly-scaled FinFETs. Our analysis indicates that due to poor thermal coupling to substrate – in the thin fin body devices – a large part of heat flows out of BEOL. This makes self-heating, and thus device (FEOL) temperature, very sensitive to BEOL design. The heat flow through BEOL also significantly increases the metal and via temperatures. The increased temperature negatively affects the overall reliability, and one of the ways to mitigate device degradation is optimization of BEOL design.
关键词： Self-heating effect,HCI,FinFET,Reliability,BTI,EM,Impact of BEOL design,Aging
更新于2025-09-12 10:27:22