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Real Time Monitoring of a UV Light-Assisted Biofunctionalization Protocol Using a Nanophotonic Biosensor
摘要： A protocol for the covalent biofunctionalization of silicon-based biosensors using a UV light-induced thiol–ene coupling (TEC) reaction has been developed. This biofunctionalization approach has been used to immobilize half antibodies (hIgG), which have been obtained by means of a tris(2-carboxyethyl)phosphine (TCEP) reduction at the hinge region, to the surface of a vinyl-activated silicon-on-insulator (SOI) nanophotonic sensing chip. The response of the sensing structures within the nanophotonic chip was monitored in real time during the biofunctionalization process, which has allowed us to confirm that the bioconjugation of the thiol-terminated bioreceptors onto the vinyl-activated sensing surface is only initiated upon UV light photocatalysis.
关键词： UV light photocatalysis,biofunctionalization,silicon on insulator,nanophotonic sensor,half antibodies
更新于2025-09-23 15:23:52
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Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs
摘要： In nanoscale fully depleted silicon-on-insulator (FD-SOI) MOSFETs, the standard deviation of threshold voltage (σVth) caused by random dopant fluctuation (RDF) is an important parameter to predict the performance of transistors and circuits. In this paper, an analytic model of σVth considering both the dopant 'number' and dopant 'position' fluctuation in channels is proposed. A new model of σVth,num caused by 'number' is given and the method of obtaining the 'position' influence ratio Rp is discussed in this paper. Moreover, the simulation methods are analyzed in detail. The calculated σVth values in FD-SOI MOSFETs are compared with the Sentaurus TCAD simulation results at different channel lengths, channel doping concentrations, SOI film thicknesses, front gate oxide thicknesses, and buried-oxide thicknesses. The comparison shows that the proposed model matches well with the obtained numerical simulation results.
关键词： threshold voltage variation,analytical model,fully depleted silicon-on-insulator MOSFETs,Sentaurus TCAD simulation,random dopant fluctuation
更新于2025-09-23 15:22:29
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Process for fabricating microactuator membranes of piezoelectric inkjet print head using multi-step deep reactive ion etching process
摘要： As part of an effort to develop piezoelectric inkjet print head (PIPH), a process for fabricating its Si-cups and actuator membranes of multi-layered structures was investigated. The manufacture of this device was enabled by the use of deep reactive ion etching (DRIE). Based on that, multi-step DRIE process was proposed to etch the multi-layered actuator membranes on silicon on insulator wafers. Due to the appropriate parameters of the etching process, undesirable effects, such as Si grasses, notching effect of Si-cups and the bowing formation on the sidewalls, were also avoided. The way to eliminate the over-etching of SiO2 membranes by controlling the appropriate platen power and process duration simultaneously was also presented. High quality PIPH actuator membranes were ?nally obtained, making great contributes to the successful inkjet test.
关键词： multi-layered actuator membranes,deep reactive ion etching,piezoelectric inkjet print head,silicon on insulator wafers,over-etching
更新于2025-09-23 15:21:21
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Coupling a silicon-on-insulator waveguide to a metala??dielectrica??metal plasmonic waveguide through a vertical and lateral taper-funnel structure
摘要： Designing efficient and compact couplers is crucial in hybrid integration of plasmonic components with conventional silicon-on-insulator components. Taper-funnel structures are conventionally used to couple light from a silicon strip waveguide to a metal–dielectric–metal plasmonic waveguide. In this paper, we investigate the effect of different parameters of the metallic funnel and the vertically and laterally tapered silicon waveguide on the performance of the designed coupler. Numerical simulations indicate that the tuned coupler has an average coupling efficiency of 87% in the C-band. The designed 1.18-μm-long coupler has a shorter length compared to the previous designs, while its theoretical coupling efficiency is higher than 85% in the entire O, E, S, C, L, and U bands of optical communication.
关键词： silicon-on-insulator,plasmonic waveguide,taper-funnel structure,coupling efficiency
更新于2025-09-23 15:21:01
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Integrated Optical Add-Drop Multiplexer in SOI Based on Mode Selection and Bragg Reflection
摘要： We present a compact optical add-drop multiplexer in silicon-on-insulator based on combining mode selection with Bragg reflection. The add-drop channel has a 3-dB bandwidth of 2 nm, an extinction ratio of 30 dB, and an interferometric crosstalk of less than –42 dB. We characterize the inter-channel and interferometric crosstalk performance using BER measurements for 10-Gb/s NRZ data and obtain crosstalk induced power penalties less than 3.5 dB.
关键词： silicon-on-insulator,Bragg gratings,multi-mode waveguides,Optical add-drop multiplexer
更新于2025-09-23 15:21:01
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A 38 dBi Gain, Low-Loss, Flat Array Antenna for 320 GHz to 400 GHz Enabled by Silicon-On-Insulator Micromachining
摘要： Two high-gain ?at array antenna designs operating in the 320 – 400 GHz frequency range are reported in this paper. The two antennas show measured gains of 32.8 dBi and 38 dBi and consist of a 16 × 16 (256) element array and a 32 × 32 (1024) element array, respectively, which are fed by a corporate H-tree beamforming network. The measured operation bandwidth for both antennas is 80 GHz (22 % fractional bandwidth), and the total measured ef?ciency is above ?2.5 dB and above ?3.5 dB for the two designs in the whole bandwidth. The low measured loss and large bandwidth are enabled by optimizing the designs to the process requirements of the SOI micromachining technology used in this work. The total height of the antennas is 1.1 mm (1.2 λ at the center frequency), with sizes of 15 mm × 18 mm and 27 mm × 30 mm for both arrays. The antennas are designed to be directly mounted onto a standard WM-570 waveguide ?ange. The design, fabrication, and measurements of eight prototypes are discussed in this paper and the performance of the antennas compared to the simulated data, as well as manufacturability and fabrication repeatability are reported in detail.
关键词： terahertz radiation,corporate beamforming network,array antennas,silicon micromachining,silicon on insulator,waveguide arrays,submillimeter-wave antennas
更新于2025-09-23 15:19:57
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Ultrashort waveguide tapers based on Luneburg lens
摘要： In integrated photonic circuits, silicon-on-insulator waveguides with different geometries have been employed to realize a variety of components. Therefore, efficient coupling of two different waveguides is crucial. In this paper, focusing property of the Luneburg lens is exploited to design waveguide tapers. The Luneburg lens, truncated in a shape of a parabolic taper with reduced footprint, is utilized to connect a 10 μm-wide waveguide to a 0.5 μm one with the same thickness with an average coupling loss of 0.35 dB in the entire O, E, S, C, L, and U bands of optical communications. The proposed compact taper with the length of 11 μm is implemented by varying the thickness of the guiding layer and compared with three conventional tapers with the same length. However, designing a coupler to connect waveguides with different thicknesses and widths is more challenging. By applying quasi-conformal transformation optics, we flatten the Luneburg lens and consequently increase the refractive index on the flattened side. As a result, we are able to couple two waveguides with different thicknesses and widths. The numerical simulations are used to evaluate the theoretically designed tapers. To our knowledge, this is the first study presenting ultrashort tapers based on truncated Luneburg lens.
关键词： Silicon-on-insulator,Waveguide taper,Metamaterials,Luneburg lens
更新于2025-09-23 15:19:57
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High-Performance Germanium Waveguide Photodetectors on Silicon
摘要： Germanium waveguide photodetectors with 4 ??m widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth. The dependence of the germanium layer length on the responsivity and bandwidth of the photodetectors is studied. The optimal length of the germanium layer to achieve high bandwidth is found to be approximately 8 ??m. For the 4 × 8 ??m2 photodetector, the dark current density is as low as 5 mA/cm2 at ?1 V. At a bias of ?1 V, the 1550 nm optical responsivity is as high as 0.82 A/W. Bandwidth as high as 29 GHz is obtained at ?4 V. Clear opened eye diagrams at 50 Gbits/s are demonstrated at 1550 nm.
关键词： responsivity,Germanium waveguide photodetectors,silicon-on-insulator substrates,selective epitaxial growth,bandwidth
更新于2025-09-23 15:19:57
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Investigation for Sidewall Roughness Caused Optical Scattering Loss of Silicon-on-Insulator Waveguides with Confocal Laser Scanning Microscopy
摘要： Sidewall roughness-caused optical loss of waveguides is one of the critical limitations to the proliferation of the silicon photonic integrated circuits in fiber-optic communications and optical interconnects in computers, so it is imperative to investigate the distribution characteristics of sidewall roughness and its impact upon the optical losses. In this article, we investigated the distribution properties of waveguide sidewall roughness (SWR) with the analysis for the three-dimensional (3-D) SWR of dielectric waveguides, and, then the accurate SWR measurements for silicon-on-insulator (SOI) waveguide were carried out with confocal laser scanning microscopy (CLSM). Further, we composed a theoretical/experimental combinative model of the SWR-caused optical propagation loss. Consequently, with the systematic simulations for the characteristics of optical propagation loss of SOI waveguides, the two critical points were found: (i) the sidewall roughness-caused optical loss was synchronously dependent on the correlation length and the waveguide width in addition to the SWR and (ii) the theoretical upper limit of the correlation length was the bottleneck to compressing the roughness-induced optical loss. The simulation results for the optical loss characteristics, including the differences between the TE and TM modes, were in accord with the experimental data published in the literature. The above research outcomes are very sustainable to the selection of coatings before/after the SOI waveguide fabrication.
关键词： optical scattering loss,sidewall roughness,silicon-on-insulator waveguide
更新于2025-09-23 15:19:57
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Silicon p-n-Diode Based Electro-Optic Modulators
摘要： A method for forming p–n-diode based silicon electro-optic modulators using local oxidation is tested. It is shown that the local oxidation of silicon allows forming a rib waveguide as a smoothed trapezoid, in contrast to the classical technique of creating a rib waveguide by plasma-chemical etching. The main advantages of the approach used are described: controllability and reproducibility of critical design parameters of the modulators (width and height of the waveguide rib), low surface roughness, and the possibility of using approaches to forming a modulating p–n-diode of combined type in a rib waveguide, which are standard for planar technologies.
关键词： silicon-on-insulator,electro-optic modulator,waveguide
更新于2025-09-19 17:13:59