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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Additive Fiber Optic Probe Technology for Precise Trimming of High-Performance Lithium Niobate Photonic Integrated Circuits
摘要： Lithium Niobate (LN) is a basic material of integrated optics, for example for electro and acousto-optical modulators, switches, diffraction gratings, nonlinear optical wavelength converters and others [1]. LN based ion exchange or Ti-indiffused contact photolithographic techniques are established technologies, however, finite tolerance of optical elements could not respond some modern applications. For example, high-purity suppressed carrier synthesis or high extinction ratio pulse generation for precision measurement systems require additional active trimming electrodes [2] at the device and corresponding servo loop. Recently developed direct laser writing (DLW) of femtosecond/ultrafast laser pulses [3] can be employed to address the problem, but this method is problematic for mass production and suffer from high insertion loss in optical waveguides (typically ~1 dB/cm compared to <0.1 dB/cm for Ti in-diffused waveguides). We have proposed a method that combines low loss of Ti in-diffused technology and passive permanent trimming of DLW. Moreover, the implementation of the proposed technique is based on very cheap commercially available equipment that makes it very attractive. This is a micro-machining of a thin loading metal film on the top of a waveguide. It is based on dependence of plazmon polariton excitation efficiency on the thickness of metal film. Titanium loading film by thickness of 10 nm adds addition insertion losses (~ 1 dB/mm) and changes effective refractive index of the waveguide (~ 10-6(cid:121)10-5). The loading film was deposited in zones of the integrated optical chip which were most sensitive to its influence such as X-type direction coupler and Y-branch. The film thickness of several nanometres allows rather low laser intensity could be used for local ablation. The simple semiconductor pump laser (978 nm) for erbium doped fiber optic amplifier was used. The output fiber was exploited as a probe. The tip of the fiber was positioned close to the integrated optical chip surface. For laser power of 500 mW the intensity on the tip of the output single mode fiber was about 1 kW/mm2. The integrated optical chip was attached to a precise 3-axis translation stage that allowed flexible manipulation of the loading film micro-machining. Monitoring of optical signals (1550 nm) on the output of integrated optical chip provided possibilities on-line control of the trimming. To demonstrate the efficiency of the proposed method the adjustment of extinction ratio ER (relation of maximum transmitted optical power to its minimum) of Mach-Zehnder modulator was performed. ER is critically dependent on precise power balance in both arms of the interferometers. We demonstrate increase in ER in 17 dB (from 30 to 47 dB). Our findings can potentially be applied in modulators for quantum key distribution, precise sensing, high fidelity signal processing and others.
关键词： trimming,photonic integrated circuits,integrated optics,fiber optic probe,Lithium Niobate
更新于2025-09-12 10:27:22
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Characterization of Waveguide Photonic Crystal Reflectors on Indium Phosphide Membranes
摘要： We present waveguide photonic crystal re?ectors on the InP-membrane-on-silicon (IMOS) platform, and a method to accurately measure the re?ectivity of those re?ectors. The photonic crystal holes are patterned on a waveguide using electron-beam lithography and etched through the waveguiding layer to create a broadband distributed Bragg re?ector. We show simulations of these re?ectors and experimental results of fabricated devices, both showing a high, free-to-choose re?ectivity, and high quality factor Fabry-P′erot cavities. We experimentally show re?ectivities higher than 95% for the re?ectors and a quality factor as high as 15,911±511 for a Fabry-P′erot cavity, using re?ectors with a length of only 4 microns. For the ?rst time, to our knowledge, two methods for measuring the re?ectivity are used for characterization of on-chip re?ectors to accurately determine the re?ection. The ?rst method is based on analysis of the transmission through a Fabry-P′erot cavity, the second is based on a direct four-port measurement of the re?ector. A systematic error is made in both methods, resulting in an upper and lower boundary for the actual re?ection coef?cient.
关键词： photonic crystals,nanophotonics,Photonic integrated circuits
更新于2025-09-12 10:27:22
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Simulations of Nanoscale Room-Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon-Photonic Sensing and Quantum Applications
摘要： Photonic qubits can represent an ideal choice in quantum-information science since photons travel at the speed of light and interact weakly with the environment over long distances. In this context, technological platforms allowing the development and implementation of chip-scale integrated-photonics represent a possible solution towards scalable quantum networking schemes. However, at present, most examples of integrated quantum photonics still require the coupling of light to external photodetectors operating at very low temperatures. In this paper, we demonstrate that the GeSn/Si-in-SOI technological platform can be a good candidate to realize integrated single-photon avalanche detectors (SPADs), operating at room temperature. Thus, we report the design and simulation of waveguide-based SPADs for operation at 1550 nm and 2000 nm wavelengths. We calculate the breakdown voltage, the dark count rate (DCR), the single photon detection efficiency (SPDE), the noise equivalent power (NEP), the dark count and the afterpulsing probabilities by simulating the avalanche process and the statistical features in a self-consistent way. The PIPIN SPAD performance parameters are estimated as a function of the GeSn’s threading dislocation density and of the temperature. We also demonstrate that for operation at 1550 nm and 2000 nm wavelengths with the 220-nm GeSn separate-absorber film centered in the 250-nm-high Si waveguide end, it is possible cover a number of applications at room or near room temperature, ranging from ultra-sensitive LIDAR to quantum communications, metrology, sensing and key distribution.
关键词： Optoelectronic and Photonic device,Photonic integrated circuits,Silicon Photonics,Photodetector,Avalanche photodiode
更新于2025-09-12 10:27:22
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[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - A Demultiplexer Immune from Fabrication-Error Impairments as an Enabler of Compact High-Channel-Count (> 64 ch) Dense WDM Systems on Low-End Si PIC Platforms
摘要： We propose and theoretically validate a novel demultiplexer capable to automatically correct all fabrication-error-induced spectrum impairments. This technology, once realized, enables high-channel-count (> 64 ch) dense WDM systems on low-end Si PIC platforms.
关键词： Photonic integrated circuits
更新于2025-09-12 10:27:22
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Slot-Waveguide Silicon Nitride Organic Hybrid Distributed Feedback Laser
摘要： one of the major barriers for a widespread commercial uptake of silicon nitride photonic integrated circuits for cost-sensitive applications is the lack of low-cost monolithically integrated laser light sources directly emitting into single-mode waveguides. In this work, we demonstrate an optically pumped organic solid-state slot-waveguide distributed feedback laser designed for a silicon nitride organic hybrid photonic platform. Pulsed optical excitation of the gain medium is achieved by a 450 nm laser diode. the optical feedback for lasing is based on a second-order laterally coupled Bragg grating with a slot-waveguide core. Optimized material gain properties of the organic dye together with the increased modal gain of the laser mode arising from the improved overlap of the slot-waveguide geometry with the gain material enable single-mode lasing at a wavelength of 600 nm. The straightforward integration and operation with a blue laser diode leads to a cost-effective coherent light source for photonic integrated devices.
关键词： photonic integrated circuits,silicon nitride,slot-waveguide,distributed feedback laser,organic hybrid
更新于2025-09-12 10:27:22
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III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
摘要： Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs. Nevertheless, laser source integration technologies are not yet as mature, hampering the further cost reduction of the eventual Si photonic systems-on-chip and impeding the expansion of this platform to a broader range of applications. Here, we discuss a promising technology, micro-transfer-printing (μTP), for the realization of III-V-on-Si PICs. By employing a polydimethylsiloxane elastomeric stamp, the integration of III-V devices can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs. This paper summarizes some of the recent developments in the use of μTP technology for realizing the integration of III-V photodiodes and lasers on Si PICs.
关键词： micro-transfer-printing,Silicon photonics,III-V-on-Si,photonic integrated circuits,laser integration
更新于2025-09-12 10:27:22
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A Comparison between Off and On-Chip Injection Locking in a Photonic Integrated Circuit
摘要： The mutual and injection locking characteristics of two integrated lasers are compared, both on and off-chip. In this study, two integrated single facet slotted Fabry–Pérot lasers are utilised to develop the measurement technique used to examine the different operational regimes arising from optically locking a semiconductor diode laser. The technique employed used an optical spectrum analyser (OSA), an electrical spectrum analyser (ESA) and a high speed oscilloscope (HSO). The wavelengths of the lasers are measured on the OSA and the selected optical mode for locking is identi?ed. The region of injection locking and various other regions of dynamical behaviour between the lasers are observed on the ESA. The time trace information of the system is obtained from the HSO and performing the FFT (Fast Fourier Transform) of the time traces returns the power spectra. Using these tools, the similarities and differences between off-chip injection locking with an isolator, and on-chip mutual locking are examined.
关键词： photonic integrated circuits,semiconductor lasers,injection locking,mutual coupling
更新于2025-09-12 10:27:22
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Integrated RF Passive Low Pass Filters in Silicon Photonics
摘要： The integration of passive radio frequency (RF) components, such as resistors, capacitors, and inductors, requires a relatively large area on complementary metal oxide semiconductor (CMOS) chips, which is not cost-effective in developing optical receiver front-ends. This could be addressed by implementing passive RF components on silicon photonics chips. In this work, we present an on-chip passive RF low-pass filter coupled to an integrated photodetector. This study demonstrates that passive RF analog processing can be implemented in a commercial silicon photonics platform. The performance of the implemented RC filters is reported at frequencies up to 15 GHz.
关键词： low pass filters,photonic integrated circuits,silicon photonics,CMOS integrated circuits,passive RF circuits
更新于2025-09-11 14:15:04
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MEMS-enabled Silicon Photonic Integrated Devices and Circuits
摘要： Photonic integrated circuits have seen a dramatic increase in complexity over the past decades. This development has been spurred by recent applications in datacenter communications and enabled by the availability of standardized mature technology platforms. Mechanical movement of wave-guiding structures at the micro- and nanoscale provides unique opportunities to further enhance functionality and to reduce power consumption in photonic integrated circuits. We here demonstrate integration of MEMS-enabled components in a simplified silicon photonics process based on IMEC’s Standard iSiPP50G Silicon Photonics Platform and a custom release process.
关键词： Microelectromechanical Systems,Photonic Integrated Circuits,Nanophotonics,Integrated Optics,Silicon Photonics
更新于2025-09-11 14:15:04
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[OSA CLEO: Applications and Technology - San Jose, California (2015..-..)] CLEO: 2015 - 56 Gb/s WDM transmitter module based on silicon microrings using comb lasers
摘要： We demonstrate the performance and the reliable fabrication process of a 56 Gb/s wavelength-division multiplexing transmitter module with integrated feedback structures. The device is based on microring silicon depletion modulators, optimized for O-band comb-laser operation.
关键词： Photonic integrated circuits,Modulators,Integrated optics devices
更新于2025-09-11 14:15:04