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Patterned Si Film Electrode Fabricated on Shape Memory Alloy
摘要： A patterned Si ?lm electrode with lozenge-shaped tiles was fabricated on a Ti–50.5Ni current collector by masking with an expanded metal foil and its electrochemical properties were compared with those of a continuous Si ?lm electrode. Prior to Si ?lm deposition, structural and mechanical properties of the Ti–Ni current collector were investigated by means of DSC, XRD and tensile test. The Ti–Ni current collector was composed of austenitic (B2) phase which can leads to the stress induced martensitic transformation at room temperature. The patterned Si ?lm electrode yielded high initial ef?ciency of 83.4% and good capacity retention of 72.3%, and the enhanced structural stability compared to those of continuous Si ?lm electrode, indicating that the application of patterning process is a promising approach to improve electrochemical properties of Si ?lm electrode.
关键词： Shape Memory Alloy,Thin Film,Patterning,Silicon
更新于2025-09-04 15:30:14
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Investigating Zinc Ketoiminates as a New Class of Precursors for Solution Deposition of ZnO Thin Films
摘要： Zinc oxide (ZnO) has been recognized as one of the most promising metal oxide semiconductor material for processing low-cost thin film transistors (TFTs). Within the scope of this work, we demonstrate a simple, stabilizer free and very efficient chemical solution deposition (CSD) route to grow high quality ZnO layers. The identification of a highly soluble zinc ketoiminate precursor that undergoes hydrolysis under ambient conditions with the facile cleavage of the ligands was the key to develop a simple and straightforward process for ZnO thin films under mild process conditions. Upon heat treatment at moderate temperatures, the precursor decomposes cleanly yielding polycrystalline ZnO thin films, which was confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition was investigated employing complementary techniques such as X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS) which revealed high purity ZnO layers. The functional properties in terms of transparency and optical band gap were determined by ultraviolet-visible (UV-Vis) spectroscopy. The transparent ZnO semiconductor thin films serve as active channel layer of thin film transistors (TFT) which was demonstrated by spin coating of the precursor. Subsequent curing in ambient air, yields a 10 nm film that is sufficient to fabricate working TFTs test structures.
关键词： Oxide Semiconductors,Additive-Free Solution Processing,Composition,Thin Film Transistors
更新于2025-09-04 15:30:14
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Electrical Stability of Solution-Processed Indium Oxide Thin-Film Transistors
摘要： We investigated the electrical stability of bottom-gate/top-contact-structured indium oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. The solution-processed In2O3 film exhibits a nanocrystalline morphology with grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. Over repeated TFT operation under vacuum, the TFTs exhibit a slight increase in the field-effect mobility, possibly due to multiple instances of the “trapping and release” behavior of electrons at grain boundaries. On the other hand, a decrease in the field-effect mobility and an increase in the hysteresis are observed as the measurement continues in atmospheric air. These results suggest that the electrical stability of solution-processed In2O3 TFTs is significantly affected by the electron-trapping phenomenon at crystal grain boundaries in the In2O3 semiconductor and the electrostatic interactions between electrons and polar water molecules.
关键词： Thin-Film Transistor,Stability,Solution Process,Indium Oxide
更新于2025-09-04 15:30:14
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A Stretchable Graphene Thin-Film Sensor for Detecting All of Lateral and Vertical Strains
摘要： In this work, we propose a stretchable graphene ?lm sensor that can detect all of lateral and vertical strain with unique architecture in single sensor element since most approaches so far are only available for detecting either lateral or vertical strain, but not both. The sensor is fabricated with percolative networks of graphene nanoplatelet using spray-coating method for constructing strain sensing channel and electrode simultaneously. The sensor exhibits a high stretchability of 150% with a gauge factor of 8.56 (0–100%) and 19.8 (100–150%) in the two regimes, for lateral strain. The sensor also presents a high sensitivity for vertically applied pressure in the range of 100–20,000 Pa, belonging to general human pressure perception range. Based on the sensing properties demonstrated, the proposed graphene sensor is a promising candidate for sensor that can detect both lateral and vertical strains in single sensor element.
关键词： Graphene Strain Sensors,Graphene Thin-Film,Graphene Nanoplatelet (GNP),Flexible Transducer,Graphene Pressure Sensors,Graphene
更新于2025-09-04 15:30:14
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Simulated and Real Sheet-of-Light 3D Object Scanning Using a-Si:H Thin Film PSD Arrays
摘要： A MATLAB/SIMULINK software simulation model (structure and component blocks) has been constructed in order to view and analyze the potential of the PSD (Position Sensitive Detector) array concept technology before it is further expanded or developed. This simulation allows changing most of its parameters, such as the number of elements in the PSD array, the direction of vision, the viewing/scanning angle, the object rotation, translation, sample/scan/simulation time, etc. In addition, results show for the first time the possibility of scanning an object in 3D when using an a-Si:H thin film 128 PSD array sensor and hardware/software system. Moreover, this sensor technology is able to perform these scans and render 3D objects at high speeds and high resolutions when using a sheet-of-light laser within a triangulation platform. As shown by the simulation, a substantial enhancement in 3D object profile image quality and realism can be achieved by increasing the number of elements of the PSD array sensor as well as by achieving an optimal position response from the sensor since clearly the definition of the 3D object profile depends on the correct and accurate position response of each detector as well as on the size of the PSD array.
关键词： three-dimensional sensing,arrays,three-dimensional image acquisition,three-dimensional image processing,thin film devices and applications,optical sensing and sensors
更新于2025-09-04 15:30:14
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P-1.11: A Compact Model of Current and Capacitance for Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
摘要： In recent years, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have shown outstanding performance in flexible circuit applications, active matrix display and so on. Therefore, they will play an increasingly important role in the future of electronic applications. At the same time, an analytical model that predicts the electrical characteristics of IGZO TFTs is also critical. In this paper, we present a current and capacitance compact model of a-IGZO TFTs. The compact model can be applied to different channel lengths for a-IGZO TFTs. Besides, it is capable of capturing device characteristics and of maintaining high computational efficiency. Its accuracy is validated through the extensive comparisons between model results and experimental data.
关键词： degenerate mechanism,AC model,Amorphous IGZO thin-film transistors,DC model
更新于2025-09-04 15:30:14
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8.1: <i>Invited Paper:</i> Enhanced Elevated-Metal Metal-Oxide Thin-Film Transistor Technology
摘要： Enhancement to the elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) architecture employing annealing-induced source/drain regions is presently reported, thus further extending the advantage of EMMO over the conventional TFT architectures. The enhancement includes: a 3-mask process resulting in a reduced mask-count, hence manufacturing cost; a bottom-gate self-aligned process resulting in reduced parasitic overlap capacitance, hence signal delay; and a 300-oC process, with the lower temperature offering better compatibility with a wider range of flexible substrates.
关键词： Annealing-Induced Source and Drain,Self-Aligned,Elevated-Metal Metal-Oxide,Flexible Substrate,Indium-Gallium-Zinc Oxide,Mask-Count,Thin-Film Transistor
更新于2025-09-04 15:30:14
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Highly uniform electrochromic tungsten oxide thin films deposited by e-beam evaporation for energy saving systems
摘要： In the last few decades, there has been a surge of interest in using tungsten oxide thin films as an active layer of electrochromic device. These devices have several practical applications such as smart window of buildings and automobile glazing for energy saving. The main objective of this work was to construct highly homogeneous and uniform e-beam evaporated amorphous WO3-x based films into electrochromic devices, which were fully characterized for switching speed, coloration efficiencies and cycling voltammetry responses. Fabricated devices contain indium doped transparent oxide coated glass as the transparent conductive electrode, ～200 nm thickness of WO3-x as the cathodically coloring material and a lithium perchlorate based conducting gel electrolyte. X-ray diffraction patterns indicate that all as-deposited films are amorphous. Experimental results showed that both solid and liquid electrolyte electrochromic devices are initially very transparent that exhibit perfect optical modulation and coloration efficiency (up to 68.7 cm2/C and 52.6 cm2/C at 630 nm, respectively) due to easier intercalation of the Li+ within their structure. One of the more significant findings to emerge from this study is that e-beam coated electrochromic devices based on tungsten oxide thin films showed superior performance among to other coating methods. Therefore, excellent reversibility of color change behavior is attractive for pertinent use in electrochromic energy storage devices.
关键词： Thin film,Tungsten oxide,Electrochromic device,Electron-beam evaporation
更新于2025-09-04 15:30:14
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Effects of doping by aluminum or lanthanum on the electrical and electroluminescence properties of Ca0.6Sr0.4TiO3:Pr thin films
摘要： Thin-film electroluminescent devices containing Ca0.6Sr0.4TiO3:Pr, Al-doped Ca0.6Sr0.4TiO3:Pr, or La-doped Ca0.6Sr0.4TiO3:Pr phosphors were prepared by a conventional sol–gel and firing method. Doping by Al improved the performance of the device markedly, in that its current-starting voltage and emission-starting voltage decreased, its luminance response became more rapid, and its relative quantum efficiency increased. Almost all the effects of doping with La were opposite to those of doping with Al. On stacking thin films of Al-doped Ca0.6Sr0.4TiO3:Pr and La-doped Ca0.6Sr0.4TiO3:Pr, the current-starting voltage and the emission-starting voltages decreased further and the relative quantum efficiency increased further in comparison with the Al-doped film. The effects of doping by Al and La can be understood by assuming that Ca0.6Sr0.4TiO3:Pr separates into n-type and p-type semiconducting regions as a result of the electromigration of oxygen vacancies, and that the oxygen-vacancy density increases or decreases on doping by Al and La, respectively.
关键词： Perovskite titanate,Praseodymium,Lanthanum,Oxide thin film,Aluminum,Electroluminescence
更新于2025-09-04 15:30:14
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Highly UV sensitive polycrystalline zinc selenide thin film grown by chemical bath deposition technique
摘要： In this communication, we report a significantly high UV sensitivity of polycrystalline zinc selenide thin films prepared by chemical bath deposition technique. A three order of magnitude of photo current to dark current ratio is obtained for the as-deposited film under UV exposure. However, the photosensivity is found to decrease sharply upon open air isochronal annealing of the sample. The variation of the photocurrent to dark current ratio with annealing temperature is attributed to shrinking diameter of nano-wire like structures exhibited by the films, variation of the band gap energy and a decrease in the grain boundary charge density of the material which collectively enhance the free carrier concentration in the band leading to a substantial loss in the photosensitivity of annealed films compared to the as-deposited film.
关键词： ZnSe thin film,UV sensitivity,SEM,Band gap energy,Optical absorption co-efficient,Grain boundary charge density
更新于2025-09-04 15:30:14