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Structural, electrical and mechanical properties of ВС films prepared by pulsed laser deposition from mixed and dual boron-diamond/graphite targets
摘要： Relatively low and high deposition rates of BCх films were realized by pulsed laser ablation of mixed B–diamond and dual B–graphite targets, respectively. Deposition was performed at 500 °C and the rate of film deposition was determined with respect to the number of atomic monolayers (obviously less or more than one monolayer) grown for one laser pulse. In the case of BCх films formation with a low deposition rate, doping with B facilitated the growth of the nanocomposite structure, which possessed an increased fraction of sp3 bonds, a very low electrical resistance, and an improved mechanical performance. The change of the sheet resistance of these films as the temperature was reduced from 300 to 65 K had a metallic character. For about 95-nm-thick films with bulk compositions of BC1.7 and BC0.6, the resistivity at room temperature were approximately equal to 1.5 mΩ·cm, and the lowest resistivity of 0.23 mΩ·cm was detected for B-enriched film at 85 K. With an increase in the B atom concentration in such films, the charge carrier (holes) concentration decreased, and their mobility increased from 180 to 10,500 cm2·V?1·s?1 due to samples cooling. The application of a higher deposition rate from the dual B–graphite target activated surface migration of condensed atoms, which caused the development of granular morphology, the B segregation and the reduction of the sp3 bond fraction. The hardness and electrical conductivity of such films were obviously inferior to those of the films obtained by PLD with a low deposition rate.
关键词： Hardness,Thin films,Resistivity,Pulsed laser deposition,Boron,Diamond-like carbon
更新于2025-09-19 17:15:36
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Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds
摘要： The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that SiV centers in nanodiamonds exhibit a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range ≈730–742 nm and broad linewidths between 5 and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 and 835 nm, but narrow linewidths from below 1 up to 4 nm. Supported by ab initio Kohn–Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of a new class of silicon-related defects. Whereas single photon emission is demonstrated for defect centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.
关键词： diamond,single photons,density functional theory calculations,color centers,optical emission,nanodiamond
更新于2025-09-19 17:15:36
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Investigation of 3D diamond detector dosimetric characteristics
摘要： Recently, a polycrystalline chemical vapor deposited (pCVD) 3D diamond detector with graphitic in bulk electrodes, fabricated using a pulsed laser technique has been evaluated for photon beam radiation dosimetry during in-air exposure. The same 3D diamond detector, has now been investigated to evaluate its performance under clinically relevant conditions putting the detector inside a Polymethylmethacrylate (PMMA) phantom, to obtain higher precision dosimetric measurements. The detector leakage current was of the order of ±25 pA or less for bias voltages up to ?100 V. The 3D detector was tested for time stability and repeatability showing excellent performance with less than 0.6% signal variation. It also showed a linear response for low dose rates with a deviation from linearity of 2%. It was also possible to verify the detector response as a function of the depth in PMMA up to 18 cm.
关键词： Diamond Detectors,Radiotherapy concepts,Dosimetry concepts and apparatus
更新于2025-09-19 17:15:36
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Acoustic wave transparency in nitrogen-vacancy centers in a photonic crystal
摘要： We show that the interaction of nitrogen-vacancy centers in diamond with a strain field in a photonic crystal can lead to acoustic wave transparency. This occurs due to the strong interaction of photons with the modified photonic reservoir near the photonic band edge created by the photonic crystal. For achieving this, we explore the properties of the spin states of the ground state of the nitrogen-vacancy centers, where one transition interacts with a strain field while the other transition has spontaneous emission that occurs near the edge of the photonic band gap, which should be in the microwave regime. We show that depending on the form of the photonic density of states acoustic wave transparency is obtained at one or two frequencies.
关键词： Induced transparency,Photonic crystal,Non-Markovian dynamics,Acoustic field,Nitrogen-vacancy center in diamond
更新于2025-09-19 17:15:36
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Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis
摘要： The temperature dependences of the specific resistance and Hall coefficient of high-quality synthetic boron-doped diamond single crystals grown via a high-pressure high-temperature method are studied. The concentration of acceptors in the (001) cut plates was varied in a range of 2 × 1015–3 × 1017 cm–3 by varying the concentration of boron in the growth mixture (0.0004–0.04 at %). Thin rectangular plates with the uniform concentration of boron and free from extended structural defects are cut out by a laser after the X-ray topography and mapping of UV luminescence. The concentrations of donors and acceptors in the samples are calculated from the data of the Hall effect and capacitance–voltage characteristics. The obtained results correlate with the concentration of boron in the growth mixture. The minimum compensation ratio of acceptors with donors (below 1%) is observed in the crystals grown with the concentration of boron in the growth mixture of 0.002 at %. The ratio increases when the amount of boron is increased or decreased. The samples grown at such a concentration of boron have the maximum mobility of charge carriers (2200 cm2/(V s) at T = 300 K and 7200 cm2/(V s) at T = 180 K). The phonon scattering of holes dominates throughout the range of temperatures (180–800 K), while the scattering by point defects (neutral and ionized atoms of the impurity) is insignificant. The diamond crystals which are grown from a mixture containing 0.0005–0.002 at % boron and have perfect quality and a lattice mechanism of scattering can be considered as a reference semiconductor.
关键词： Schottky barrier diode,semiconductor diamond,electrical properties
更新于2025-09-19 17:15:36
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Apparent delocalization of the current density in metallic wires observed with diamond nitrogen-vacancy magnetometry
摘要： We report on a quantitative analysis of the magnetic field generated by a continuous current running in metallic microwires fabricated on an electrically insulating diamond substrate. A layer of nitrogen-vacancy (NV) centers engineered near the diamond surface is employed to obtain spatial maps of the vector magnetic field, by measuring Zeeman shifts through optically detected magnetic resonance spectroscopy. The in-plane magnetic field (i.e., parallel to the diamond surface) is found to be significantly weaker than predicted, while the out-of-plane field also exhibits an unexpected modulation. We show that the measured magnetic field is incompatible with Ampère’s circuital law or Gauss’s law for magnetism when we assume that the current is confined to the metal, independent of the details of the current density. This result was reproduced in several diamond samples, with a measured deviation from Ampère’s law by as much as 94(6)% (i.e., a 15σ violation). To resolve this apparent magnetic anomaly, we introduce a generalized description whereby the current is allowed to flow both above the NV sensing layer (including in the metallic wire) and below the NV layer (i.e., in the diamond). Inversion of the Biot-Savart law within this two-channel description leads to a unique solution for the two current densities that completely explains the data, is consistent with the laws of classical electrodynamics, and indicates a total NV-measured current that closely matches the electrically measured current. However, this description also leads to the surprising conclusion that in certain circumstances the majority of the current appears to flow in the diamond substrate rather than in the metallic wire, and to spread laterally in the diamond by several micrometers away from the wire. No electrical conduction was observed between nearby test wires, ruling out a conventional conductivity effect. Moreover, the apparent delocalization of the current into the diamond persists when an insulating layer is inserted between the metallic wire and the diamond or when the metallic wire is replaced by a graphene ribbon. The possibilities of a measurement error, a problem in the data analysis, or a current-induced magnetization effect are discussed, but do not seem to offer a more plausible explanation for the effect. Understanding and mitigating this apparent anomaly will be crucial for future applications of NV magnetometry to charge transport studies.
关键词： diamond magnetometry,nitrogen-vacancy centers,Biot-Savart law,Ampère's law,magnetic field imaging,current density
更新于2025-09-19 17:15:36
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Characterization of the chips generated by the nanomachining of germanium for X-ray crystal optics
摘要： Micro-Raman spectroscopy, scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HR-TEM) were used to study the effect of cutting speed and cutting depth on the mode of the single-point diamond fly cutting of Ge(110) surface via crystallinity of the chips. Reducing the cutting depth from 15 to 2 μm and concurrently cutting speed from 10 to 2 mm/min at 2000 rpm, the content of amorphous phase in the chips increased at the expense of the crystalline one from 28 to 46%. Simultaneously, the chip morphology visible by SEM suggested transition from a brittle to a mixed brittle-ductile mode of nanomachining. The damage transition line indicates 1/3 portion of the ductile component at 2-μm cutting depth that produced twisted lamellae of a width of 18–20 μm without any signs of a fracture. As the feed rate here was 1 μm/rev, the tool made 18–20 revolutions while passing the same point of the nanomachined surface that was enough to gradually remove the surface region damaged by the brittle cutting component along with the entire amorphous region beneath, both being delaminated by the chips. This explains the dislocation-free single-crystal lattice beneath the Ge(110) surface machined under these conditions. A close relationship between the brittle mode of nanomachining and crystallinity of the chips observed by micro-Raman spectroscopy and SEM was confirmed by HR-TEM showing dense occurrence of nanocrystals in the chips coming from the nanomachinings with 5-μm and 15-μm cutting depths. These results demonstrate potential of the single-point diamond machining for the preparation of high-quality X-ray surfaces with undistorted single-crystal lattice beneath for next-generation X-ray crystal optics.
关键词： Micro-Raman spectroscopy,X-ray crystal optics,Scanning electron microscopy,Germanium,Transmission electron microscopy,Single-point diamond machining
更新于2025-09-19 17:15:36
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Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate
摘要： Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane ?ux was found to in?uence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the ?ux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality.
关键词： growth rate,single crystal diamond,methane ?ux,dual radio frequency,chemical vapor deposition (CVD),inductive coupled plasma jet
更新于2025-09-19 17:15:36
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Antimicrobial propensity of ultrananocrystalline diamond films with embedded silver nanodroplets
摘要： Ultrananocrystalline diamond (UNCD) layers exhibit excellent mechanical properties and combine chemical inertness with good biological compatibility. Therefore, UNCD is considered a promising material for coating of implants. In this work we present the preparation of thin UNCD films with embedded silver nanodroplets that provide antimicrobial property, addressing another important topic concerning implant surgery, namely the risk of a life threatening bacterial infection. UNCD layers were prepared by microwave plasma-assisted chemical vapor deposition on a silicon substrate. Afterwards, a thin film of silver was deposited on top and treated by rapid thermal annealing (RTA) leading to dewetting and formation of silver nanodroplets on the surface. A second UNCD deposition with a short duration between 5 and 30 min was applied for capping the silver nanoparticles with a thin layer. The sample surfaces were characterized after each step by atomic force microscopy and scanning electron microscopy. The composition of the final samples, including the depth of the incorporated Ag nanodroplets, was analyzed by Auger electron spectroscopy. The impact of the silver layer thickness and the RTA temperature on the nanodroplet morphology was investigated. It was found that after 10 min of capping deposition the silver particles were completely covered with UNCD. In order to study the release of silver ions, the UNCD/Ag/UNCD samples were submerged in deionized water for 7 days at 37 °C, followed by detection of the silver concentration in the aqueous samples by inductively coupled plasma mass spectrometry. The determined concentration was strongly dependent on the thickness of the capping UNCD layer, exhibiting the highest silver content for the sample with the thinnest capping layer. Thus, the UNCD layer thickness can be utilized to control the amount of Ag ions released into the surrounding environment. The antibacterial properties were investigated with bacterial assays of the Gram-negative Escherichia coli and Gram-positive Bacillus subtilis bacteria that were exposed to the samples. All silver containing samples showed significant antimicrobial propensity, whereas the different capping thicknesses affected the time-course dependent antibacterial efficiency.
关键词： antibacterial material,ultrananocrystalline diamond films,silver nanodroplets
更新于2025-09-19 17:15:36
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Reactive wetting of binary Sn Cr alloy on polycrystalline chemical vapour deposited diamond at relatively low temperatures
摘要： Synthetic diamond has excellent mechanical, thermal, and electrical properties, which makes it an ideal material in a wide range applications from abrasive grinding tools to modern electronic devices. Hence, understanding the wettability of metals on the synthetic diamond is of great importance for the development of diamond-related materials and devices. In this study, the wettability and spreading kinetics of binary SneCr alloy on chemical vapour deposed (CVD) polycrystalline diamond compacts were investigated using a sessile drop method. In situ observation of contact angle at elevating temperatures indicated trace addition of Cr dramatically improved the wettability of Sn on CVD diamond, and the SneCr alloy started to wet CVD diamond at approximately 750 °C. Isothermal spreading kinetic analysis revealed that the spreading of SneCr alloy on CVD diamond was controlled by the kinetics of chemical reaction at advancing triple line. Microstructure characterization indicated that the formation of nano-sized scallop-like Cr7C3 grains was responsible for the improved wettability of SneCr alloy on CVD diamond substrate. The wetting temperature was found to play a determinant role in the interfacial carbide formation, and hence the reactive wetting of SneCr alloy on CVD diamond at temperatures from 700 to 900 °C.
关键词： Reactive wetting,Interface reaction,Chromium carbides,CVD diamond
更新于2025-09-19 17:15:36