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Spatial range of the plasmonic Dicke effect in an InGaN/GaN multiple quantum well structure
摘要： The plasmonic Dicke effect means a cooperative emission mechanism of multiple light emitters when they are simultaneously coupled with the same surface plasmon (SP) mode of a metal nanostructure to achieve a higher collective emission efficiency. Here, we compare the enhancements of emission efficiency among a series of SP-coupled InGaN/GaN quantum-well (QW) structures of different QW period numbers to show an emission behavior consistent with the plasmonic Dicke effect. The relative enhancement of overall emission efficiency increases with QW period number until it reaches a critical value, beyond which the enhancement starts to decrease. This critical QW period number corresponds to the effective depth range of the plasmonic Dicke effect in a multiple-QW system. It also represents an optimized QW structure for maximizing the SP coupling effect. Internal quantum efficiency and time-resolved photoluminescence are measured for comparing the enhanced emission efficiencies of blue and green QW structures with different QW period numbers through SP coupling induced by surface Ag nanoparticles.
关键词： multiple quantum well,internal quantum efficiency,Ag nanoparticle,surface plasmon coupling,plasmonic Dicke effect,time-resolved photoluminescence
更新于2025-09-23 15:21:01
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A discrete core-shell-like micro-light-emitting diode array grown on sapphire nano-membranes
摘要： A discrete core-shell-like micro-light-emitting diode (micro-LED) array was grown on a 100 nm-thick sapphire nano-membrane array without harmful plasma etching for chip singulation. Due to proper design for the sapphire nano-membrane array, an array of multi-faceted micro-LEDs with size of 4 μm × 16 μm was grown. threading dislocation density in the micro-LeD formed on sapphire nano-membrane was reduced by 59.6% due to the sapphire nano-membranes, which serve as compliant substrates, compared to GaN formed on a planar substrate. Enhancements in internal quantum efficiency by 44% and 3.3 times higher photoluminescence intensity were also observed from it. Cathodoluminescence emission at 435 nm was measured from c-plane multiple quantum wells (MQWs), whereas negligible emissions were detected from semi-polar sidewall facets. A core-shell-like MQWs were formed on all facets, hopefully lowering concentration of non-radiative surface recombination centers and reducing leakage current paths. This study provides an attractive platform for micro-LEDs by using sapphire nano-membrane.
关键词： internal quantum efficiency,photoluminescence,threading dislocation density,micro-LED,sapphire nano-membrane,core-shell-like,cathodoluminescence
更新于2025-09-23 15:21:01
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Efficient Structure for InP/ZnS-Based Electroluminescence Device by Embedding the Emitters in the Electron-Dominating Interface
摘要： The charge-carrier distribution has been an important parameter in determining the efficiency of quantum-dot-based light-emitting diodes (QLEDs). In this Letter, we demonstrate a new inverted device structure of ITO/ZnO/polyethylenimine/quantum dots (QDs)/1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi)/4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP)/MoO3/Al for improving the efficiency of InP-QD-based QLEDs. By introducing a thin layer of electron transport materials, the hole accumulation at the hole transport layer and the QD interface is largely reduced, which suppresses the quenching effect of holes on the QD emission. Compared with the conventional device structure with the emitters at ZnO/CBP pn junction, the peak current efficiency (external quantum efficiency) increases from 3.83 (5.17 cd/A) to 6.32% (8.54 cd/A) by imbedding the QDs at the electron-dominating interface of ZnO/TPBi. The analysis reveals that an internal quantum efficiency of nearly 100% is achieved for the InP-QD-based device (with a photoluminescence quantum yield of 32%). This work provides an alternative device structure for achieving high-efficiency QLED devices.
关键词： electron transport materials,quantum-dot-based light-emitting diodes,internal quantum efficiency,charge-carrier distribution,InP-QD-based QLEDs
更新于2025-09-23 15:19:57
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(Ba,Sr)LaZnTaO6:Mn4+ far red emission phosphors for plant growth LEDs: structure and photoluminescence properties
摘要： It is necessary to develop novel high-efficient red or far-red-emitting in order to facilitate the phosphor-converted light-emitting diodes (pc-LEDs) for plant growth. This work reports a series of novel far-red emitting (Ba,Sr)LaZnTaO6:xMn4+ phosphors with double perovskite structure synthesized by traditional high-temperature solid-state reaction (SSR) process. The crystal structure and morphology of (Ba,Sr)LaZnTaO6 are investigated by high-resolution TEM, SEM, and XRD Rietveld refinement. The photoluminescece properties are systematically explored and analyzed by diffuse reflection (DR) spectra, photoluminescence emission (PL) and excitation (PLE) spectra, decay curves and temperature-dependent spectra. Mn4+ ions occupy Ta5+ sites located at [TaO6] octahedral emitting red light with peak at 698 nm in BaLaZnTaO6:Mn4+ and 695 nm in SrLaZnTaO6:Mn4+ under n-UV and blue light excitation. The critical quenching concentration of Mn4+ was determined to be 0.008. The concentration quenching mechanism could be a dipole-dipole interaction between Mn4+ ions. In addtion, the PL intensity of (Ba,Sr)LaZnTaO6:xMn4+ phosphors decrease with increasing temperature. The SrLaZnTaO6:xMn4+ sample has better thermal stability than BaLaZnTaO6:xMn4+. Interestingly, (Ba,Sr)LaZnTaO6:0.008Mn4+ exhibits outstanding internal quantum efficiency (IQE ≥ 80 %). Fianally, the fabricated of LEDs are combined with SrLaZnTaO6:0.008Mn4+ phosphors combined with 460 nm InGaN chips, which emit blue and red light. Based on above properties, the rare-earth-free (Ba,Sr)LaZnTaO6:xMn4+ phosphors have great potentials to be serviced as far-red emitting phosphors in high-power plant growth LEDS.
关键词： double perovskite structure,phosphor-converted light-emitting diodes,internal quantum efficiency,far-red emitting,plant growth,Mn4+,thermal stability,photoluminescence,solid-state reaction
更新于2025-09-23 15:19:57
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Mn <sup>4+</sup> -activated BaLaMgSbO <sub/>6</sub> double-perovskite phosphor: a novel high-efficiency far-red-emitting luminescent material for indoor plant growth lighting
摘要： In the present work, novel high-efficiency Mn4+-activated BaLaMgSbO6 (BLMS) far-red-emitting phosphors used for plant growth LEDs were successfully synthesized via a solid-state reaction method. X-ray diffraction (XRD), photoluminescence (PL), temperature-dependent PL, CIE color coordinates, and lifetimes as well as internal quantum efficiency (IQE) were used to characterize the phosphor samples. The excitation spectrum of the as-obtained BLMS:Mn4+ phosphors presented two wide bands covering 250–550 nm and the emission spectrum exhibited a far-red emission band in the range of 650–800 nm peaked at 700 nm. Concentration-dependent PL properties of BLMS:Mn4+ phosphors were studied. The optimal doping concentration of Mn4+ ions was 0.6 mol%, and the concentration quenching mechanism was determined to be the nonradiative energy transfer among the nearest-neighbor Mn4+ activators. Impressively, the BLMS:0.6%Mn4+ sample showed an outstanding IQE of 83%. In addition, the luminescence thermal quenching characteristics were also analyzed. Furthermore, the PL spectrum of BLMS:0.6%Mn4+ sample was compared with the absorption spectrum of phytochrome PFR. Finally, after combining BLMS:0.6%Mn4+ phosphors with a 365 nm near-UV LED chip, a far-red light-emitting diode (LED) device was successfully achieved to demonstrate its possible applications in plant growth LEDs.
关键词： far-red-emitting,solid-state reaction,Mn4+-activated,internal quantum efficiency,plant growth LEDs,phosphor,BaLaMgSbO6
更新于2025-09-19 17:15:36
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Effect of annealing temperature on internal absorption, charge recombination and internal quantum efficiency of HC(NH2)2PbI3 perovskite solar cells
摘要： The effect of annealing temperature for the perovskite layer on the internal absorption(Q), charge recombination and internal quantum efficiency (IQE) of HC(NH2)2PbI3 (FAPbI3) perovskite solar cells (PeSCs) was investigated. The PeSC with FAPbI3 film annealed at 145 °C has relatively better internal absorption, lower charge recombination and higher charge collection, leading to the higher device IQE.
关键词： Charge recombination,Perovskite solar cell,Internal absorption,Internal quantum efficiency
更新于2025-09-19 17:13:59
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Correlation between performance and compositional grading in quantum well of deep UV-LED
摘要： A novel AlGaN/AlGaN multiple-quantum-wells light-emitting diode (LED) structure with linearly graded Al-content in the quantum well (QW) is thoroughly investigated in order to observe the effect on the electrical and optical performances of the devices. The results confirm that the polarization-shape across the active region highly depends on the concentration profile of aluminium, which eventually plays a critical role in determining the overall radiative recombination by promoting hole injection, as well as, improving the electron hole wave-function overlap. In order to correlate, two modified structures with variation in the compositional grading in the quantum well both along and opposite to the growth direction have been studied, and compared to a conventional structure. The outcomes reveal that the structure with Al composition grading in the QW which varies from 72 % to 76 % in the growth direction enhances the device performance.
关键词： Quantum Well (QW),Internal quantum efficiency (IQE),Deep ultra-violet (DUV) LEDs,Compositional grading
更新于2025-09-19 17:13:59
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Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer.
摘要： We have envisaged and designed a novel III-V Nitride based deep ultraviolet light emitting diodes (DUV LEDs) with reasonably high efficiency at higher current density using a double-side grading in electron blocking layer (EBL). Double-side step- and linear-grading in EBL yield better performance attributable to improved hole injection, stifled electron overflow and diminished electrostatic field in the active region. The performance curves indicate that double sided linear grading in EBL has 5.63 times enhancement in power compared to the conventional LED and the efficiency droop is as low as 15% at the current density of 200 A/cm2 for the emission wavelength of ~273 nm.
关键词： Double side compositional grading,Electron Blocking Layer (EBL),Internal Quantum Efficiency (IQE),Deep Ultraviolet (DUV) LEDs
更新于2025-09-19 17:13:59
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Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission
摘要： Al-rich AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) have a low light extraction efficiency, especially when the emission wavelength is shorter than 280 nm, and this is partially because of the dominant transverse-magnetic polarized light. Our results show that the transverse-electric (TE) polarized light can be obtained even if the emission wavelength becomes even shorter by reducing the quantum well thickness. The ultrathin quantum well enables the enhanced TE-polarized emission that arises from the redistributed subbands for holes. On the contrary to the common belief, we observe a blueshift for the emission wavelength when the AlN composition in the quantum barrier increases. The internal quantum efficiency (IQE) for DUV LEDs with ultrathin quantum wells is no longer determined by the quantum-confined Stark effect, while quantum barrier with high AlN composition is vitally important to improve the electron injection efficiency and thus enhance the IQE.
关键词： quantum well,AlGaN,quantum barrier,internal quantum efficiency,deep-ultraviolet,TE-polarized emission,light-emitting diodes
更新于2025-09-12 10:27:22
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Performance evaluation of composition graded layer of aSi1-xGex: H in n+aSi:H/i-aSi:H/p+aSi1-xGex:H graded band gap single junction solar cells
摘要： The work investigates the role of composition grading of amorphous silicon germanium alloy on single junction graded band gap amorphous silicon solar cells, for the first time. The fabrication and optical characterization of composition graded aSi1-xGex: H alloy by varying the gas flow rate of germane (GeH4) are presented. We propose the composition graded p+aSi1-xGex: H layer to be considered as one of the active layers in amorphous silicon based solar cells. The principle of operation of the solar cell is illustrated with the energy band diagram of proposed n+aSi:H/i-aSi:H/p+aSi1-xGex:H solar cell structure. Further, the behavior of the structure is evaluated through simulation in terms of proposed layer thickness variation and temperature variation. It is observed that the proposed structure is capable of delivering an open circuit voltage (V oc), short circuit current density (Jsc), Fill Factor (FF) and conversion efficiency (g) of 1.1 V, 15.56 mA/cm2, 0.885 and 15.19% respectively, which is at par with any other single junction amorphous silicon solar cells. The cell performance parameters were compared with related state of the art as well as our previous works. The performance parameters of proposed structure show that it is better to use a single composition graded layer instead of using a number of non-graded composition layers in photovoltaic structures, which reduces complexity and cost of fabrication.
关键词： Internal Quantum Efficiency,Optical band gap,Germane flow rate,Conversion efficiency,Composition grading,PECVD
更新于2025-09-12 10:27:22