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High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric
摘要： In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.
关键词： metal-oxide semiconductors,thin-film transistors,high-k dielectric,high mobility,inkjet printing
更新于2025-11-14 15:19:41
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Carrier Generation in p-Type Wide-Gap Oxide: SnNb <sub/>2</sub> O <sub/>6</sub> Foordite
摘要： Wide-gap oxides with their valence band maximum (VBM) composed of s orbitals are essential for realizing practical p-type transparent oxide semiconductors. We prepared a new p-type wide-gap oxide, SnNb2O6 foordite, with its VBM composed of Sn 5s orbitals. To discuss carrier generation, we prepared both p-type and n-type SnNb2O6 by controlling the annealing conditions. The carrier mobility and density were 3.8 × 10?1 cm2 V?1 s?1 and 3.7 × 1018 cm?3, respectively, for the p-type sample and 9.9 cm2 V?1 s?1 and 7.5 × 1015 cm?3, respectively, for the n-type sample. The crystal structure of SnNb2O6 foordite consists of two types of alternating layers, Sn and Nb2O6 octahedra, where three nonequivalent oxygen sites exist. Six oxygens in the chemical formula of SnNb2O6 are distributed at the three sites in pairs, where the oxygens in three nonequivalent sites were named O1?O3. Hole and electron carriers were considered to be generated by Sn4+-on-Nb5+ substitutional defects (SnNb??) and oxygen vacancies of O1 and O2 that are not bonded to Sn (VO1/O2′), respectively. Therefore, we concluded that it is essential to control SnNb?? and VO1/O2′ to control the semiconducting properties such as the carrier type and carrier density.
关键词： wide-gap oxides,carrier generation,SnNb2O6 foordite,annealing conditions,p-type transparent oxide semiconductors
更新于2025-09-23 15:21:01
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Significant Performance Improvement of Oxide Thin-Film Transistors by a Self-Assembled Monolayer Treatment
摘要： Despite being a standard process in fabrication of organic thin-film transistors (TFTs) to reduce interface trap density and decrease surface energy, self-assembled monolayer (SAM) treatment of gate dielectrics is rarely used in oxide-semiconductor-based TFTs due to possible damage to the SAM during semiconductor deposition. Here, by studying the dependence of plasma damage to SAM on the deposition conditions of InGaZnO (IGZO) semiconductor thin films, the feasibility of enhancing the performance of oxide TFTs using octadecyl-trichlorosilane (OTS)-treated, ultra-thin AlxOy gate dielectrics is explored. It is discovered that under optimized conditions, the TFTs can be significantly improved, showing a reduction of interface trap density by 50% and an increase of carrier mobility and current on/off ratio by a factor of 2.3 and 76, respectively. The effects on bias stress stability also show substantial improvement after the SAM interface treatment. Finally, such an optimized condition is found to also work for IGZO TFTs gated with OTS-treated HfOx, showing an increase of mobility from 7.8 to 16 cm2 V?1 s?1 compared with the untreated devices. As a result, this simple and yet effective interface treatment method and the resulting devices may have potential applications in future low-cost, low-power electronics.
关键词： interface treatment,octadecyltrichlorosilane,self-assembled monolayers,thin-film transistors,oxide semiconductors
更新于2025-09-23 15:19:57
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Magnetic bipolar transistor based on ZnO/NiO/Si heterostructure using pulsed laser deposition
摘要： Oxide semiconductors are promising candidates for next generation electronics. In this work, magnetic bipolar transistor was fabricated by growing thin films of p-NiO and n-ZnO on n-type silicon wafer by pulsed laser deposition technique with an in-situ annealing at 670○ C in the presence of oxygen. The structural characterization of these films was done by X-ray diffraction and Raman spectroscopy and magnetic properties were studied by vibrating sample magnetometer (VSM). I-V characteristic of fabricated transistor was tested in common emitter configuration with DC biasing. Junction parameters such as ideality factor, series resistance, and transistor parameters like q-point were determined by using conventional transistor output characteristics. The diode and transistor showed an increase in current with the externally applied magnetic field due to the presence of Nickel or Oxygen vacancies in NiO attributing to spin polarized bipolar transport. Therefore the current amplification in these devices can be controlled by spin; making it attractive for spintronic applications.
关键词： oxide semiconductors,pulsed laser deposition,spintronic applications,magnetic bipolar transistor
更新于2025-09-23 15:19:57
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Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique
摘要： Polycrystalline CdO:In2O3 thin films for gas sensor applications were prepared on glass and silicon substrates by using one-step spray pyrolysis technique from the aqueous solution of CdCl2 and InCl3 at a substrate temperature of 300 °C. The structure, surface morphology, and the optoelectronic properties of prepared films were characterized respectively by means of X-ray diffraction (XRD), atomic force microscope and UV–visible spectroscopy. Based on the XRD results, the polycrystalline nature of CdO films has been confirmed, and In2O3 films were found to exhibit a preferred orientation along (222) diffracted plane. The grain size varies between 9.0 and 28.4 nm. The results of Hall effect measurement of CdO:In2O3 thin films confirms that all films were an n-type semiconductor. The electrical properties of prepared thin films and their sensitivity to nitrogen dioxide (NO2) gas are also studied. The influence of the operating temperature and In2O3 concentration on the NO2 response were investigated. It is found that all films are sensitive to NO2 gas, and the ideal operating temperature for the film contented 20 vol% of In2O3 was found to be 200 °C at a gas concentration of 25 ppm. The sensing mechanism of the CdO:In2O3 thin film is discussed and attributed to electron transfer between the sensing element and NO2 molecules.
关键词： NO2 gas sensor,Sensitivity,Optoelectronic properties,Structural,Morphology,Metal-oxide semiconductors
更新于2025-09-19 17:15:36
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Ozone-mediated Controllable Hydrolysis for High Quality Amorphous NbO <sub/>x</sub> Electron Transport Layer in Efficient Perovskite Solar Cells
摘要： Amorphous NbOx electron transport layer (ETL) shows great potential for boosting the power conversion efficiency (PCE) of perovskite solar cells (PSCs) at low temperature (< 100 °C). To date, it is still a challenge to simultaneously control the hydrolysis of NbOx precursor solution and reduce the impurities of NbOx ETLs during low-temperature solution processing under ambient conditions. Herein, for the first time, we report ozone (O3) as a strong ligand to stabilize Nb salt solution under ambient conditions. The above procedure not only provides the formation of a highly repeatable amorphous NbOx film by suppressing the hydrolysis of the solution but also reduces the OH content in the film, which decreases the defect intensity and improves the conductivity of the NbOx ETL. Thus, the formation of highly repeatable NbOx ETL-based PSCs are obtained; moreover, these PSCs have high PCE of 19.54% and 16.42% on rigid and flexible substrate, respectively, much higher than the devices based on ETLs from a solution without an O3 treatment.
关键词： NbOx,electron transport layer,perovskite solar cell,amorphous oxide semiconductors,low temperature
更新于2025-09-19 17:13:59
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Oxygen Vacancy Controlled SiZnSnO Thina??Film Inverters with High Gain
摘要： Amorphous SiZnSnO (a-SZTO) thin film are succesfully deposited to control the electrical characteristics by changing the oxygen partial pressure [p(O2)] ratio during the deposition. As the p(O2) ratio increase, the on current, off current, and the field effect mobility (μFE) decrease and the threshold voltage (Vth) shift to the positive direction, gradually. This phenomenon occurred because the oxygen vacancies (VO) in the channel were suppressed due to the effect of oxygen injected during the deposition. To explore the possibility that the device can be applied to integrated thin film circuit and operate well in the application, the n-type only inverters are fabricated using VO controlled thin film transistors (TFTs). All inverters have clear voltage transfer characteristics (VTC) and well operated in the range of 3 V to 15 V of VDD. When Vth shift to positive direction in enhancement mode (E-mode), the voltage transition region (Vtr) of the inverter also shift to positive direction. The highest voltage gain is measured to be about 26.554 V/V at 15 V of VDD. It is proposed to be able to fabricate the inverters and control the transition value of VTC of the inverter simply by changing p(O2) ratio of E-mode TFT.
关键词： thin film transistors,n-type,amorphous oxide semiconductors,oxygen partial pressure
更新于2025-09-19 17:13:59
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Interfacial Engineering in Functional Materials for Dye‐Sensitized Solar Cells || Binary Semiconductor Metal Oxide as Photoanodes
摘要： As both natural and synthetic metal oxide semiconductors (MOSs) have diverse applications and the properties of MOS can be tailored in many ways, viz., varied choice of morphologies, introducing oxygen vacancies, doping. In photovoltaics, MOSs serve as a scaffold layer for loading dyes in dye-sensitized solar cells (DSSCs) and organic–inorganic hybrid perovskites in perovskite solar cells (PSCs), as well as electron and hole transport layers in DSSCs and organic solar cells (OSCs). The function of scaffold in DSSCs is to facilitate charge separation and charge transport, whereas that of the transport layers is to conduct one type of charge carrier block to the other type. Therefore, tailoring their properties is inevitable to develop high-performing photovoltaic devices using them. On the other hand, the electrochemical properties of the MOS such as band edge energies determine their success as photocatalysts [1].
关键词： metal oxide semiconductors,perovskite solar cells,photovoltaics,charge transport,dye-sensitized solar cells
更新于2025-09-12 10:27:22
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Influence of back gate voltage on electrical transport in Zn <sub/>1-(y+x)</sub> (Al <sub/>x</sub> ,Eu <sub/>y</sub> )O thin films
摘要： We investigated the back gate voltage (VBG) dependent electrical conductivity of Zn1-(y+x)(Alx,Euy)O (x = 0.00, 0.01; y = 0.00, 0.01, 0.02 and 0.05) thin films. Zn1-(y+x)(Alx,Euy)O (x = 0.00, 0.01; y = 0.00, 0.01, 0.02 and 0.05) thin films were synthesized with combining sol-gel and spin coating techniques. Electrical conductivity measurements was monitored by longitudinal conductivity curves of Eu doped (Zn, Al)O thin films. The measurements show a sharp decrease or increase in conductivity of Eu doped (Zn, Al)O thin films by an applied ±VBG, which was not observed for Al doped ZnO thin films. The Eu amount in (Zn, Al)O lattice was the key parameter to manage the change in conductivity by ±VBG. The highest increase in conductivity by applied ±VBG was observed for 1 mol% Eu-doped Zn1-(y+0.01)(Al0.01,Euy)O films, which also performed the highest longitudinal conductivity without a VBG. By applied VBG = ?100 V, the change ratio in conductivity reached up to 436% for 1 mol% Eu doped (Zn, Al)O thin films. The response to VBG were drastically decreased by increase in Eu amounts in the lattice, and furthermore no change in conductivity was observed for 5 mol% Eu doped (Zn, Al)O thin films.
关键词： dopant,oxide semiconductors,II–VI semiconductors,rare earth element,back gate voltage
更新于2025-09-11 14:15:04
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[Energy, Environment, and Sustainability] Sensors for Automotive and Aerospace Applications || Leakage Monitoring in Inflatable Space Antennas: A Perspective to Sensitive Detection of Helium and Nitrogen Gases
摘要： In?atable space structures have become an important part of space explorations due to their lightweight, simpler design, low cost, and fewer parts. These structures include antennas, solar arrays, solar concentrators, re?ectors, etc. These structures are made of ?exible polymers which can be folded and easily carried with spacecraft due to their small volume and weight. Structures, when reaching their destination, are in?ated through internal pressurization to achieve desired structural integrity. In space, these structures are subjected to very harsh environment such as high radiation levels, structural vibrations, and micrometeoroid bombardments. The polymeric material used to fabricate these structures is susceptible to degradation under these harsh conditions. These structures are prone to lose their structural integrity over long-term degradation of the material. The most common problem associated with in?ated space antennas is leakage of in?ated gas. Hence, the health monitoring of these structures becomes crucial to avoid structural failure due to leakages which may cause loss of information, accuracy, and money. Gas sensors are used to detect leakages in these structures. A mixture of helium (He) and nitrogen (N2) is used as in?ating gas in space antennas. Helium is the lightest gas after hydrogen and has chemically inert, non?ammable nature which makes it an ideal in?ating gas. However, the detection of He leakages is very dif?cult because of its nonreactive behavior with chemical species. Metal oxide based semiconducting (MOSs) materials are widely used sensing element for detection of various gases. Although it is very dif?cult to ?nd out He gas leakages, vanadium pentoxide (V2O5) can detect even a small concentration of He through resistive changes. In this chapter, we will discuss the requirement of leakage monitoring system for in?atable space antennas and He gas sensing properties of V2O5 semiconducting material.
关键词： Helium detection,Metal oxide semiconductors,Gas sensors,In?atable space structures
更新于2025-09-09 09:28:46