- 标题
- 摘要
- 关键词
- 实验方案
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Fabrication of thin films of phosphonated calix[4]arene bearing crown ether and their gas sensing properties
摘要： Calix[4]arenes bearing phosphate and crown ether groups are shown to hold considerable promise as the active layer in volatile organic compound (VOC) vapor sensor. Its chemical sensing selectivity and sensitivity can be altered by different alkyl side chains. These organic architectures were successfully deposited by spin coating method on gold-coated glass surfaces. Surface Plasmon Resonance (SPR) technique was used for VOCs detection to evaluate the chemical-sensing properties of these calix[4]arene derivatives. Spun thin films of calix[4]arene derivatives were exposed to a variety of VOC vapors, and the resonance angles changes of these films were recorded for the specific analyte vapors such as chloroform, carbon tetrachloride, dichloromethane, ethanol, benzene, and toluene. Measurements were made at room temperature, and the responses were found to be fast and appeared to be completely reversible. The sensing results showed similar response patterns, and our data strongly indicate that response of used thin films of calix[4]arene derivatives to chloroform is much higher than those of any other VOCs used with the values of 0.47×10-3, 1.042×10-3 and 1.952×10-3 (% / ppm) for the compounds 1, 2 and 3 respectively. Furthermore, gas sensing interaction mechanisms of the thin films were evaluated in terms of the molar volumes, dipole moments and refractive indexes of the analyzed gas molecules.
关键词： Calixarene,SPR,thin film,gas sensing
更新于2025-09-10 09:29:36
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[IEEE 2018 76th Device Research Conference (DRC) - Santa Barbara, CA, USA (2018.6.24-2018.6.27)] 2018 76th Device Research Conference (DRC) - Exploring Silver Contact Morphologies in Printed Carbon Nanotube Thin-Film Transistors
摘要： Demand for ubiquitous and flexible electronics to facilitate the rapid growth of Internet-of-Things (IoT) technologies has driven the advancement of printed electronics for low-cost and high-throughput manufacturing. The carbon nanotube thin-film transistor (CNT-TFT) is one of the most promising options for printed electronics due to its mechanical flexibility, compatibility with low-temperature fabrication, and relatively high mobility [1]. Meanwhile, Ag nanoparticles remain the most widely used conductive material in printed inks due to their superb dispersion stability, high conductivity, and relatively low cost [2]. However, limited studies have explored the impact of different printed metallic contacts in CNT-TFTs [3], even though the contact interfaces are one of the leading factors limiting performance. In this work, the impact of Ag contact morphology is studied for the first time by fabricating hundreds of CNT-TFTs using an aerosol jet printer to systematically investigate three morphologies (nanoparticle (NP), nanoflake (NF), and nanowire (NW), as seen in Fig. 1) and their impact on device performance. Using what is learned from the contact morphology results, the first CNT-TFTs printed without removal of the substrate from the printer (full “print-in-place” additive devices) are also demonstrated.
关键词： printed electronics,aerosol jet printer,contact morphology,carbon nanotube thin-film transistor,Ag nanoparticles
更新于2025-09-10 09:29:36
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24.1: <i>Invited Paper:</i> Flexible Oxide TFTs for Bendable and flexible displays
摘要： We review in this talk the highly stable, high performance E/S a-IGZO TFT on plastic substrate by using split active and S/D electrodes. The TFTs exhibit high mobility of 74 cm2/Vs and extremely stable behavior under bias-stress and mechanical stress. The TFT process is same as conventional one with only design change. Therefore, this technology can be used for the manufacturing of flexible and bendable AMOLED on plastic substrate
关键词： thin-film transistor (TFT),high mobility,Oxide,split
更新于2025-09-10 09:29:36
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32.2: Multifunctional electrohydrodynamic printing and its industrial applications in flat panel display manufacturing
摘要： Inkjet printing has become a robust, effective and powerful technique for display manufacturing due to its compatibility with large-area substrates, and cost effectiveness. However, conventional thermal or piezoelectric actuation falls short to fabricate the high-resolution components, and is inapplicable to highly viscous materials. Electrohydrodynamic (EHD) printing, which adopts electrical field force to pull the fluid flow from the Taylor cone at the nozzle, exhibits the ultra-high resolution (even to the nanoscale) and excellent compatibility with highly viscous inks. This paper has presented the promising applications of EHD printing in display manufacturing, e.g. micro dams for boundary definition, organic thin films for encapsulation, and micro lens array for light extraction. Dams with width/thickness of 1~20 μm/0.5~3 μm have been directly written on test element group border in a cost-effective and high-efficient manner, to replace traditional lithography and etching process in boundary definition. By adopting EHD printing to eject smaller droplets, the thickness of the organic layer in thin film encapsulation has been decreased to less than 6 μm, which is far beyond the current industrial level (8~12 μm), and making the device to be more flexible. Further, micro lens array with diameters ranging from 3 μm to 20 μm have been directly fabricated on the encapsulation layer of OLED, which make light outcoupling more effective.
关键词： electrohydrodynamic printing,micro lens,thin film encapsulation,dam
更新于2025-09-10 09:29:36
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P-1.9: Characterization of Self-Aligned Top-Gate Microcrystalline Silicon Thin Film Transistors
摘要： Self-aligned top-gate microcrystalline silicon (μc-Si) thin film transistors (TFTs) are fabricated and characterized. By replacing high-temperature SiO2 with low-temperature SiO2, the performance of self-aligned top-gate μc-Si TFTs can be greatly improved due to the prevention of hydrogen diffusion into the air. The bridged grain (BG) structure is successfully applied to self-aligned top-gate μc-Si TFTs for the first time. By employing the BG doping inside the channel, all device characteristics are improved in self-aligned top-gate μc-Si TFTs.
关键词： Microcrystalline silicon,bridged grain,thin film transistors,self-aligned
更新于2025-09-10 09:29:36
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P-6.1: Asymmetric Effects of Gate-Bias Stress Voltage on the Stability under Positive and Negative Gate-Bias Stress of a-IGZO TFTs
摘要： The asymmetric effects of gate-bias stress voltage on the stability under positive gate-bias stress (PBS) and negative gate-bias stress (NBS) of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) are investigated. It is observed that under PBS, the threshold voltage shift (?Vth) increases with the increased value of the gate-bias stress voltage (VStress), which is due to the enhanced electron trapping at/near the interface of the channel and the gate insulator. However, under NBS, the ?Vth is nearly unaffected by the Vstress. As the NBS-induced negative ?Vth is resulted from electron-detrapping from the donor-like states related to oxygen vacancies, it is supposed that the rate of electron-detrapping is not sensitive to the negative gate-bias voltage. The influence of N2O plasma back-channel treatment is also studied. The stability under NBS is effectively improved after the N2O plasma treatment, which originates from the decreased density of oxygen-vacancy related donor-like states within the a-IGZO channel layer.
关键词： thin-film transistors,N2O plasma treatment.,amorphous InGaZnO,gate-bias stress,stability
更新于2025-09-10 09:29:36
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P-10.2: The Influences of PECVD Deposition SiNx on the Thin Film Encapsulation Performance
摘要： Low-temperature PECVD technology was used to fabricated inorganic layer in thin film encapsulation for AMOLED display. We systematically obtained SiNx films in different RF power. Stress and refractive index was characterized and analyzed to study the film performance. The results shows that different RF power leads to different film stress, and well-designed stress-matched multilayer SiNx will highly improve the TFE reliability. Furthermore, the RA life time (60 °C, 90% RH) of OLED displays with new multilayer SiNx inorganic layer TFE structure has been sharply increased from 240hours to 480hours.
关键词： PECVD,SiNx,Thin Film Encapsulation,Flexible OLED
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Evaluation of the Thermal Properties for the Design of the Semiconductor Device
摘要： The more semiconductor devices progress, the more importance of caring about heat dissipation from heat generation increase. This is called “Thermal design”. Thermophysical property values like thermal conductivity and thermal expansion coefficient are used as information for thermal design. The specified values in a brochure or literature data of similar materials are usually used as the thermophysical property values for the thermal design. However, when those values are used for simulation, the results may be wrong because an actual measured value such as rate of conduction of heat of an ingredient is different from literature data or the nominal value in many cases. It is thought that there are a lot of cases without considering directionality of an ingredient (anisotropy) and influence of joint interface. We propose that we should measure these values with considering anisotropy, size effect and the bonding state and utilize them for thermal design of electronic materials used in a semiconductor device.
关键词： Thermal diffusivity,Thermal conductivity,Thin film,Thermal resistance,Bonding layer,Anisotropy,Thermal design,Transient thermal measurement
更新于2025-09-10 09:29:36
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Microstructure and thermoelectric properties of In2O3/ITO thin film thermocouples with Al2O3 protecting layer
摘要： In2O3/ITO thin film thermocouples (TFTCs) with alumina protecting layer were fabricated on alumina substrates. The effects of protecting layer on their performance at higher temperature and long term service were investigated accordingly. In2O3 and ITO thin films were prepared by radio frequency magnetron sputtering methods, while the alumina protecting layer was prepared by traditional spin-coating methods. Microstructural and thermoelectric properties of the In2O3/ITO TFTCs with and without alumina (Al2O3) protecting layer were investigated as a function of sintering time from 2 to 10 h at 1250 °C. The results show that, the existence of alumina protecting layer can effectively increase the performance capabilities of thermocouples at high temperatures by inhibiting the volatilization of the thin film. In2O3/ITO TFTCs with protecting layer can work normally over 10 h at 1250 °C while Seebeck coefficient is 131.7 μV/°C. The drift rate can reach 3.05 °C/h, which is much better than those without protecting layer.
关键词： high temperature,thermoelectric properties,Al2O3 protecting layer,long term service,In2O3/ITO thin film thermocouples
更新于2025-09-10 09:29:36
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Determination of Sulfite in Botanical Medicine Using Headspace Thin-Film Microextraction and Surface Enhanced Raman Spectrometry
摘要： A facile method using headspace thin-film microextraction (HS-TFME) coupled with surface enhanced Raman spectrometry (SERS) has been developed for the determination of sulfite in traditional Chinese herbal medicine. The extraction substrate was synthesized by depositing urchin-like ZnO micron particles on glass sheets using chemical liquid phase deposition. Under the optimal conditions, the intensity of the SERS signal at 630–640 cm?1 provided a good linear relationship with the concentration of sulfite from 25 to 400 mg/kg, and the linear correlation coefficient (R) was 0.996 with a detection limit of 6 mg/kg. The method was employed for the determination of sulfite in herbal medicines, and the results were confirmed by a traditional distillation-titration method. Therefore, this developed HS-TFME-SERS method may play an important role in the rapid, simple, and selective determination of sulfite residues in Chinese herbal medicine and become a potentially universal method for this analyte in various solid samples.
关键词： Headspace thin-film microextraction (HS-TFME),scanning electron microscopy (SEM),X-ray diffraction (XRD),surface enhanced Raman spectrometry (SERS),transmission electron microscopy (TEM)
更新于2025-09-10 09:29:36