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Performance analysis of p-LPZO/n-GZO and p-SZO/n-GZO homojunction UV photodetectors
摘要： A comprehensive analytical model for the dark current and photoresponsivity of ZnO thin film based homojunction ultraviolet (UV) photodetector (PD) is proposed in this study. The detailed insight about the effects of different acceptor doping materials in the illuminated surface layer is presented in this work. The recombination velocity of the carriers and the effect of applied reverse bias, specifically on the responsivity of p-n homojunction based UV PD are elucidated. The impact of two different types of dual ion beam sputtering (DIBS)-grown acceptor-doped ZnO (Sb:ZnO and Li-P:ZnO) materials on the responsivity is also discussed. The investigation results reveal that an increase in applied reverse bias results in higher responsivity due to depletion region increase leading to higher charge carrier photogeneration. Further, on comparing the results with the experimentally reported ZnO-based homojunction UV PDs, it is found that, by incorporating Sb:ZnO as p-type layer, dark current and responsivity values are improved by ~38 and ~63.7%, respectively. Hence, the developed model is significant for the design optimization of high-performance ZnO thin film-based UV homojunction PDs.
关键词： Dual ion beam sputtering (DIBS),Responsivity,Photodetector (PD),Ultraviolet (UV)
更新于2025-09-23 15:19:57
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High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films
摘要： Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve the performance and expand the detection range. Here, high-quality Cu1-xNixO (x=0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu1-xNixO films can be modulated by Ni doping. Among the photodetectors, the Cu0.8Ni0.2O photodetector shows the maximum photocurrent value (6×10-7 A) under 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176 %) are also achieved for Cu0.8Ni0.2O photodetector. This is because the Cu0.8Ni0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu0.8Ni0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high performance and wide detection range p-type metal oxide photodetectors.
关键词： Copper oxide,Ni doping,photodetector,responsivity,external quantum efficiency
更新于2025-09-23 15:19:57
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Metal-Semiconductor-Metal ?μ-Ga2O3 Solar-Blind Photodetectors with a Record High Responsivity Rejection Ratio and Their Gain Mechanism
摘要： In recent years, Ga2O3 solar-blind photodetector (SBPD) has been attached great attention for its potential application in solar-blind imaging, deep space exploration, and confidential space communication, etc. In this work, we demonstrated an ultrahigh performance ε-Ga2O3 metal-semiconductor-metal (MSM) SBPD. The fabricated photodetectors exhibited record-high responsivity and fast decay time of 230 A/W and 24 ms, respectively, compared with MSM-structured Ga2O3 photodetectors reported to date. Additionally, the ε-Ga2O3 MSM SBPD presents ultrahigh detectivity of 1.2×1015 Jones with low dark current of 23.5 pA under the operation voltage of 6 V, suggesting its strong capability of detecting an ultraweak signal. The high sensitivity and wavelength selectivity of the photodetector were further confirmed by the record high responsivity rejection ratio (R250nm/R400nm) of 1.2×105. From the temperature-dependent electrical characteristics in the dark, the thermionic field emission and Poole-Frenkel emission were found to be responsible for the current transport in the low and high electric field regimes, respectively. In addition, the gain mechanism was revealed by the Schottky barrier lowering effect due to the defect states at the interface of metal contact and Ga2O3 or in the bulk of Ga2O3 based on current transport mechanism and density functional theory (DFT) calculation. These results facilitate a better understanding of ε-Ga2O3 photoelectronic devices and provide possible guidance for promoting their performance in future solar-blind detection applications.
关键词： rejection ratio,metal-organic chemical vapor deposition,ε-Ga2O3,responsivity,high-performance,solar-blind photodetector
更新于2025-09-19 17:13:59
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Flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio
摘要： In this work, flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio are demonstrated. The Ga2O3 films are obtained by the RF magnetron sputtering method on flexible polyimide (PI) substrates and the results demonstrate that all the films grown under various temperatures are amorphous. When the incident light wavelength is less than 254 nm, the incident light is effectively absorbed by the Ga2O3 film. By controlling the growth temperature of the material, the responsivity and photo-to-dark current ratio of the corresponding metal-semiconductor-metal photodetectors are significantly improved. At growth temperature of 200 oC, the current under 254 nm illumination obtains 396 nA at voltage of 20 V (corresponding responsivity is 52.6 A/W), the photo-to-dark current ratio is more than 105, and the external quantum efficiency reaches 2.6×10 4 %, which is among the best reported Ga2O3 ultraviolet photodetectors including the devices on the rigid substrates. After the bending and fatigue tests, the flexible detectors have negligible performance degradation, showing excellent mechanical and electrical stability.
关键词： solar blind photodetector,responsivity,photo-to-dark current ratio,Ga2O3,flexible device
更新于2025-09-19 17:13:59
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[IEEE 2019 14th IEEE Conference on Industrial Electronics and Applications (ICIEA) - Xi'an, China (2019.6.19-2019.6.21)] 2019 14th IEEE Conference on Industrial Electronics and Applications (ICIEA) - Research and Application of Remote Removal of Floating Foreign Objects on Transmission Lines Based on Fiber Laser
摘要： We present a detailed investigation of the responsivity and the noise in room temperature THz direct detectors made of YBa Cu O (YBCO) thin-film nano-bolometers. The YBCO nano-bolometers are integrated with planar spiral antennas covering a frequency range from 100 GHz to 2 THz. The detectors were characterized at 1.6 THz, 0.7 THz, 400 GHz and 100 GHz. The maximum electrical responsivity of 70 V/W and a minimum noise equivalent power (NEP) of 50 pW/Hz were measured, whereas the highest optical responsivity was 45 V/W. The noise in nano-bolometers is independent on the device volume and for a given modulation frequency and a dc voltage Hz.
关键词： room temperature operation,YBa Cu O (YBCO) film,responsivity,THz detectors,Bolometer
更新于2025-09-19 17:13:59
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Porous Si-SiO2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector
摘要： Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the filters only attenuated the responsivity. All microcavities had a localized mode close to 360 nm in the UV-A range, and this meant that porous Si-SiO2 filters cut off the photodetection range of the photodetector from 300 to 350 nm, where microcavities showed low transmission. In the short-wavelength range, the photons were absorbed and did not contribute to the photocurrent. Therefore, the density of recombination centers was very high, and the photodetector sensitivity with a filter was lower than the photodetector without a filter. The maximum transmission measured at the localized mode (between 356 and 364 nm) was dominant in the UV-A range and enabled the flow of high energy photons. Moreover, the filters favored light transmission with a wavelength from 390 nm to 510 nm, where photons contributed to the photocurrent. Our filters made the photodetector more selective inside the specific UV range of wavelengths. This was a novel result to the best of our knowledge.
关键词： nanotechnology,photonic nanoscience,responsivity,porous Si-SiO2,UV filters
更新于2025-09-19 17:13:59
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Industrial Applications of Nanomaterials || Nanomaterials-based UV photodetectors
摘要： Photodetectors are essential elements applied in video imaging, optical communications, biomedical imaging, security, night-vision, gas sensing, and motion detection, which possess the ability to transform light into electrical signals precisely. As the scale and diversity of application areas are growing, the need for innovative photodetection platform technologies with higher performance in terms of speed, efficiency or wavelength range, as well as material flexibility, transparency, and complementary metal-oxide-semiconductor (CMOS) integrability, is becoming more critical. In the past decades, extensive efforts have been devoted to explore the next generation of photodetector materials, such as In2Te3, ZnO, and GaN, with low noise, high photosensitivity, and good stability. However, many of these novel photodetector materials still suffer from limited photocurrent and photoresponse speed.
关键词： Nanomaterials,Schottky contacts,photoconductive gain,photodetection mechanism,photoresistors,linear dynamic range,responsivity,external quantum efficiency,photodiodes,specific detectivity,UV photodetectors
更新于2025-09-19 17:13:59
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Spectral responsivity calibration of a polarization remote sensor based on a supercontinuum laser and monochromator
摘要： Relative spectral responsivity is a basic parameter for detecting and evaluating the in-band response non-consistency of the channel polarization remote sensor (CPRS) in laboratory calibration. In this paper, a spectrally resolved calibration facility was assembled for the calibration of relative spectral responsivity by using novel supercontinuum laser and monochromator (SLM). Taking three polarization channels of 490 nm, 670 nm and 910 nm as examples, the relative spectral responsivity of the CPRS was obtained from two calibration sources, respectively – the SLM and the monochromatic light from SLM steered into integrating sphere. Before measuring the relative spectral responsivity of the CPRS, the degree of linear polarization (DOLP) and the polarization orientation angle of two calibration sources were acquired by the spectral polarization analyser (SPOLA). The test result indicates that the output light of the latter calibration source has less the DOLP and smaller range of variation in the polarization orientation angle. In the experiment of measuring the relative spectral responsivity, while using monochromator as calibration source, the in-band response non-consistency of the three channels were 0.91%, 4.25% and 1.06%, respectively. Correspondingly, while using monochromatic light steered into integrating sphere, there were 0.15%, 0.47% and 0.57%, respectively. It can be concluded that SLM equipped integrating sphere sharply decreased the impact from the polarization characteristic of the source and could be e?ectively applied in the relative spectral responsivity calibration of CPRS.
关键词： spectral responsivity,integrating sphere,monochromator,supercontinuum laser,polarization remote sensor
更新于2025-09-19 17:13:59
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High Responsivity and High Rejection Ratio Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga2O3 Organic/Inorganic p-n Junction
摘要： A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p-n junction. Owing to the high crystalized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cut off wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm /R280 nm) of 103, which is two orders of magnitude larger than the average value ever reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow band-pass response of only 17 nm in width. This work might be of great value in developing high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
关键词： Self-Powered,PEDOT:PSS/β-Ga2O3,Plasmonics and Optoelectronics,Organic/Inorganic p-n Junction,Energy Conversion and Storage,High Rejection Ratio,High Responsivity,Solar-Blind Ultraviolet Photodetector
更新于2025-09-19 17:13:59
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[IEEE 2018 15th IEEE India Council International Conference (INDICON) - Coimbatore, India (2018.12.16-2018.12.18)] 2018 15th IEEE India Council International Conference (INDICON) - Fabrication and Characterization of Organic-Inorganic Hybrid Perovskite CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Based Metal-Semiconductor-Metal Photodetector
摘要： Organic-inorganic perovskite CH3NH3PbI3 is used for the fabrication of thin film photodetector, which is synthesized via the sol-gel chemical route. The prepared hybrid perovskite CH3NH3PbI3 thin film are characterized by X-ray diffraction (XRD), high resolution scanning electron microscope (HRSEM), photoluminescence. XRD result confirmed the formation of the tetragonal phase of CH3NH3PbI3 with crystallite size 15.7 nm. HRSEM image of hybrid perovskite CH3NH3PbI3 thin film confirmed the uniform distribution of particles and average particle size 30 nm. An efficient photoluminescence band is observed at 1.59 eV in hybrid perovskite CH3NH3PbI3 thin films at ambient temperature when excited with 405 nm wavelength light. Finally, the hybrid perovskite CH3NH3PbI3 thin film is investigated for electrical and optical response using fabricated metal-semiconductor-metal (MSM) photodetector.
关键词： Organic-inorganic hybrid perovskite,Responsivity,Metal-semiconductor-metal,Photodetector
更新于2025-09-19 17:13:59